In this paper,a novel trench gate gallium nitride(GaN)insulated gate bipolar transistor(GaN IGBT),in which the collector is divided into multiple regions to control the hole injection efficiency,is designed and theore...In this paper,a novel trench gate gallium nitride(GaN)insulated gate bipolar transistor(GaN IGBT),in which the collector is divided into multiple regions to control the hole injection efficiency,is designed and theoretically studied.The incorporation of a P+/P-multi-region alternating structure in the collector region mitigates hole injection within the collector region.When the device is in forward conduction,the conductivity modulation effect results in a reduced storage of carriers in the drift region.As a result,the number of carriers requiring extraction during device turn-off is minimized,leading to a faster turn-off speed.The results illustrate that the GaN IGBT with controlled hole injection efficiency(CEH GaN IGBT)exhibits markedly enhanced performance compared to conventional GaN IGBT,showing a remarkable 42.2%reduction in turn-off time and a notable 28.5%decrease in turn-off loss.展开更多
High-voltage and high-power IGBT chips have a noticeable carrier storage effect,which is related to the load current.However,the research on the carrier storage effect of existing IGBT behavior models is insufficient....High-voltage and high-power IGBT chips have a noticeable carrier storage effect,which is related to the load current.However,the research on the carrier storage effect of existing IGBT behavior models is insufficient.In this paper,An improved behavioral model for high-voltage and high-power insulated gate bipolar transistor(IGBT)chips is proposed,which could be used under different load conditions.The problems for applying the traditional behavioral model to more load conditions are discussed.Carrier behavior,in the wide base region,is analyzed,and the analytical expression of the carrierstorage-effect equivalent capacitance and the initial value of the tail current are provided to establish an improved IGBT behavioral model.A corresponding parameter extraction method is proposed.In order to verify the improved behavioral model,an experimental platform is built for resistive load and inductive load,and the results show that the accuracy of the improved behavioral model is much better than that of the traditional model.In addition,the errors of the improved model are within 12.5%under different current and load types.Considering that the maximum error of other models,which could be applied in a variety of load conditions,is more than 25%,the accuracy of the model proposed in this paper is excellent.展开更多
This paper concerns the need for improving the static and dynamic performance of the high voltage insulated gate bipolar transistor （HV IGBTs）. A novel structure with a carrier stored layer on the cathode side, know...This paper concerns the need for improving the static and dynamic performance of the high voltage insulated gate bipolar transistor （HV IGBTs）. A novel structure with a carrier stored layer on the cathode side, known as an enhanced planar IGBT of the 4500 V voltage class is investigated. With the adoption of a soft punch through （SPT） concept as the vertical structure and an enhanced planar concept as the top structure, signed as SPT＋ IGBT, the simulation results indicate the turn-off switching waveform of the 4500 V SPT＋ IGBT is soft and also realizes an improved trade-off relationship between on-state voltage drop （Von） and turn-off loss （Eoff） in comparison with the SPT IGBT. Attention is also paid to the influences caused by different carrier stored layer doping dose on static and dynamic performances, to optimize on-state and switching losses of SPT＋ IGBT.展开更多
基金the General Program of Natural Science Foundation of Chongqing(CSTB2023NSCQ-MSX0475)the Doctoral Research Start-up Fund of Chongqing University of Posts and Telecommunications(A2023-70)。
文摘In this paper,a novel trench gate gallium nitride(GaN)insulated gate bipolar transistor(GaN IGBT),in which the collector is divided into multiple regions to control the hole injection efficiency,is designed and theoretically studied.The incorporation of a P+/P-multi-region alternating structure in the collector region mitigates hole injection within the collector region.When the device is in forward conduction,the conductivity modulation effect results in a reduced storage of carriers in the drift region.As a result,the number of carriers requiring extraction during device turn-off is minimized,leading to a faster turn-off speed.The results illustrate that the GaN IGBT with controlled hole injection efficiency(CEH GaN IGBT)exhibits markedly enhanced performance compared to conventional GaN IGBT,showing a remarkable 42.2%reduction in turn-off time and a notable 28.5%decrease in turn-off loss.
基金This work was supported by the National Natural Science Foundation of China-State Grid Corporation Joint Fund for Smart Grid(No.U1766219).
文摘High-voltage and high-power IGBT chips have a noticeable carrier storage effect,which is related to the load current.However,the research on the carrier storage effect of existing IGBT behavior models is insufficient.In this paper,An improved behavioral model for high-voltage and high-power insulated gate bipolar transistor(IGBT)chips is proposed,which could be used under different load conditions.The problems for applying the traditional behavioral model to more load conditions are discussed.Carrier behavior,in the wide base region,is analyzed,and the analytical expression of the carrierstorage-effect equivalent capacitance and the initial value of the tail current are provided to establish an improved IGBT behavioral model.A corresponding parameter extraction method is proposed.In order to verify the improved behavioral model,an experimental platform is built for resistive load and inductive load,and the results show that the accuracy of the improved behavioral model is much better than that of the traditional model.In addition,the errors of the improved model are within 12.5%under different current and load types.Considering that the maximum error of other models,which could be applied in a variety of load conditions,is more than 25%,the accuracy of the model proposed in this paper is excellent.
基金Project supported by the National Major Science and Technology Special Project of China(No.2011ZX02504-002)
文摘This paper concerns the need for improving the static and dynamic performance of the high voltage insulated gate bipolar transistor （HV IGBTs）. A novel structure with a carrier stored layer on the cathode side, known as an enhanced planar IGBT of the 4500 V voltage class is investigated. With the adoption of a soft punch through （SPT） concept as the vertical structure and an enhanced planar concept as the top structure, signed as SPT＋ IGBT, the simulation results indicate the turn-off switching waveform of the 4500 V SPT＋ IGBT is soft and also realizes an improved trade-off relationship between on-state voltage drop （Von） and turn-off loss （Eoff） in comparison with the SPT IGBT. Attention is also paid to the influences caused by different carrier stored layer doping dose on static and dynamic performances, to optimize on-state and switching losses of SPT＋ IGBT.
