Gallium nitride (GaN) and indium-gallium nitride (InxGa1-xN) thin films were directly grown on several non-single-crystalline substrates such as quartz glass and amorphous-carbon-coated graphite. The films were grown ...Gallium nitride (GaN) and indium-gallium nitride (InxGa1-xN) thin films were directly grown on several non-single-crystalline substrates such as quartz glass and amorphous-carbon-coated graphite. The films were grown by using a molecular beam epitaxy apparatus having single or dual nitrogen radio-frequency plasma cells, and in addition, germanium (Ge) or magnesium (Mg) doping to the films was also attempted. Crystallinity, photoluminescence (PL) property, and electrical property of the obtained films were investigated. Highly c-axis oriented GaN and InxGa1-xN thin films were obtained on the non-single-crystalline substrates. Near-band-edge emissions were observed in their PL spectra and the intensities were strongly enhanced by Ge doping. Ge doping was also effective on reducing resistivity of the GaN thin films grown on the non-single-crystalline substrates. Electrochemical capacitance-voltage measurements were carried out on the Mg-doped GaN thin films;and p-type conduction in the films was confirmed.展开更多
Density, chemical, structural and vibrational studies of Sb65Se35-xGex system with 0 ≤ x ≤ 20 produce by melt-quench technique were carried out using Archimedes method, Energy Dispersive Spectroscopy (EDS), X-ray di...Density, chemical, structural and vibrational studies of Sb65Se35-xGex system with 0 ≤ x ≤ 20 produce by melt-quench technique were carried out using Archimedes method, Energy Dispersive Spectroscopy (EDS), X-ray diffraction (XRD) and Raman spectroscopy. All specimens are polycrystalline in nature as confirmed by XRD pattern. The compositional dependence of the XRD and Raman spectra suggests the presence of two basic structural units, SbSe3 pyramids with three-fold coordinated Sb atom at the apex and GeSe4 tetrahedrons. The compositional dependence of these physic Chemical properties of the investigated samples are investigated and discussed in light of many models. PACS: 68.55. Ln;61.50. Ks;68.55.展开更多
The isovalent element Ge doped into CZ-Si can effectively suppress the forming rate of oxygen donors andreduce their maximal concentration. The mechanical strength of silicon wafers can be increased by this proce-dure...The isovalent element Ge doped into CZ-Si can effectively suppress the forming rate of oxygen donors andreduce their maximal concentration. The mechanical strength of silicon wafers can be increased by this proce-dure. The mechanism of above phenomena has been discussed.展开更多
文摘Gallium nitride (GaN) and indium-gallium nitride (InxGa1-xN) thin films were directly grown on several non-single-crystalline substrates such as quartz glass and amorphous-carbon-coated graphite. The films were grown by using a molecular beam epitaxy apparatus having single or dual nitrogen radio-frequency plasma cells, and in addition, germanium (Ge) or magnesium (Mg) doping to the films was also attempted. Crystallinity, photoluminescence (PL) property, and electrical property of the obtained films were investigated. Highly c-axis oriented GaN and InxGa1-xN thin films were obtained on the non-single-crystalline substrates. Near-band-edge emissions were observed in their PL spectra and the intensities were strongly enhanced by Ge doping. Ge doping was also effective on reducing resistivity of the GaN thin films grown on the non-single-crystalline substrates. Electrochemical capacitance-voltage measurements were carried out on the Mg-doped GaN thin films;and p-type conduction in the films was confirmed.
文摘Density, chemical, structural and vibrational studies of Sb65Se35-xGex system with 0 ≤ x ≤ 20 produce by melt-quench technique were carried out using Archimedes method, Energy Dispersive Spectroscopy (EDS), X-ray diffraction (XRD) and Raman spectroscopy. All specimens are polycrystalline in nature as confirmed by XRD pattern. The compositional dependence of the XRD and Raman spectra suggests the presence of two basic structural units, SbSe3 pyramids with three-fold coordinated Sb atom at the apex and GeSe4 tetrahedrons. The compositional dependence of these physic Chemical properties of the investigated samples are investigated and discussed in light of many models. PACS: 68.55. Ln;61.50. Ks;68.55.
文摘The isovalent element Ge doped into CZ-Si can effectively suppress the forming rate of oxygen donors andreduce their maximal concentration. The mechanical strength of silicon wafers can be increased by this proce-dure. The mechanism of above phenomena has been discussed.
