We report optical and electrical properties of polycrystalline GaSb thin films which were successfully grown by co-evaporation on soda-lime glass substrates. The thin films have preferential orientation of the （111）...We report optical and electrical properties of polycrystalline GaSb thin films which were successfully grown by co-evaporation on soda-lime glass substrates. The thin films have preferential orientation of the （111） direction. SEM results indicate that the average grain size of GaSb thin film is 500 nm with the substrate temperature of 560 ℃. The average reflectance of GaSb thin film is about 30% and the absorption coefficient is of the order of 10^4 cm^-1. The optical bandgap of GaSb thin film is 0.726 eV. The hole concentration shows a clear increasing trend as the Ga-evaporation-temperature/Sb-evaporation-temperature （TGa/Tsb） ratio increases. When the Ga crucible temperature is 810 ℃ and the antinomy crucible temperature is 415 ℃, the hole concentration of polycrystalline GaSb is 2 × 10^17 cm^-3 and the hole mobility is 130 cm^2/（V·s）. These results suggest that polycrystalline GaSb thin film is a good candidate for the use as a cheap material in TPV cells.展开更多
The properties of GaSb substrates commonly used for the preparation of Ⅲ Ⅴ antimonide epilayers were studied before and after growing GaInAsSb multi layers by MOCVD using PL, FTIR and DCXD together with the electr...The properties of GaSb substrates commonly used for the preparation of Ⅲ Ⅴ antimonide epilayers were studied before and after growing GaInAsSb multi layers by MOCVD using PL, FTIR and DCXD together with the electrical properties and EPD values. The correlation between the substrate qualities and epilayer properties was briefly discussed. The good property epilayers of GaInAsSb and, then, the high performance of 2.3 μm photodetectors were achieved only when the good quality GaSb wafers was used as the substrates.展开更多
基金supported by the National High Technology Research and Development Program of China (No. 2004AA513020).
文摘We report optical and electrical properties of polycrystalline GaSb thin films which were successfully grown by co-evaporation on soda-lime glass substrates. The thin films have preferential orientation of the （111） direction. SEM results indicate that the average grain size of GaSb thin film is 500 nm with the substrate temperature of 560 ℃. The average reflectance of GaSb thin film is about 30% and the absorption coefficient is of the order of 10^4 cm^-1. The optical bandgap of GaSb thin film is 0.726 eV. The hole concentration shows a clear increasing trend as the Ga-evaporation-temperature/Sb-evaporation-temperature （TGa/Tsb） ratio increases. When the Ga crucible temperature is 810 ℃ and the antinomy crucible temperature is 415 ℃, the hole concentration of polycrystalline GaSb is 2 × 10^17 cm^-3 and the hole mobility is 130 cm^2/（V·s）. These results suggest that polycrystalline GaSb thin film is a good candidate for the use as a cheap material in TPV cells.
文摘The properties of GaSb substrates commonly used for the preparation of Ⅲ Ⅴ antimonide epilayers were studied before and after growing GaInAsSb multi layers by MOCVD using PL, FTIR and DCXD together with the electrical properties and EPD values. The correlation between the substrate qualities and epilayer properties was briefly discussed. The good property epilayers of GaInAsSb and, then, the high performance of 2.3 μm photodetectors were achieved only when the good quality GaSb wafers was used as the substrates.
