Thin film p-side up vertical-cavity surface-emitting lasers(VCSELs)with 940 nm wavelength on a composite metal(Copper/Invar/Copper;CIC)substrate has been demonstrated by twice-bonding transfer and substrate removing t...Thin film p-side up vertical-cavity surface-emitting lasers(VCSELs)with 940 nm wavelength on a composite metal(Copper/Invar/Copper;CIC)substrate has been demonstrated by twice-bonding transfer and substrate removing techniques.The CIC substrate is a sandwich structure with a 10µm thick Copper(Cu)layer/30µm thick Invar layer/10µm thick Cu layer.The Invar layer was composed of Iron(Fe)and Nickel(Ni)with a proportion of 70:30.The thermal expansion coefcient of the composite CIC metal can match that of the GaAs substrate.It results that the VCSEL layers can be successfully transferred to CIC metal substrate without cracking.At 1 mA current,the top-emitting VCSEL/GaAs and thin-flm VCSEL/CIC had a voltage of 1.39 and 1.37 V,respectively.The optical output powers of VCSEL/GaAs and VCSEL/CIC were 21.91 and 24.40 mW,respectively.The 50µm thick CIC substrate can play a good heat dissipation function,which results in improving the electrical and optical characteristics of thin flm VCSELs/CIC.The VCSEL/CIC exhibited a superior thermal management capability as compared with VCSEL/GaAs.The obtained data suggested that VCSELs on a composite metal substrate not only afected signifcantly the characteristics of thin film VCSEL,but also improved considerably the device thermal performance.展开更多
立方 Ga As (10 0 )衬底上制备的 Ga N薄膜多为立方结构且立方相为亚稳相 ,采用水平常压 MOCVD方法在立方 Ga As (10 0 )衬底上制备出了 Ga N薄膜 . XRD测试表明 ,薄膜具有单一的相 .结合对工艺条件的分析 ,认为薄膜具有六方结构 .最后 ...立方 Ga As (10 0 )衬底上制备的 Ga N薄膜多为立方结构且立方相为亚稳相 ,采用水平常压 MOCVD方法在立方 Ga As (10 0 )衬底上制备出了 Ga N薄膜 . XRD测试表明 ,薄膜具有单一的相 .结合对工艺条件的分析 ,认为薄膜具有六方结构 .最后 ,通过 Raman光谱测试 ,证实在立方 Ga As衬底上制备出了单相六方 Ga N薄膜 .还对立方 Ga As衬底上制备出六方 Ga展开更多
High performance 150-nm gate-length metamorphic Al0.48In0.52As/Ga0.47In0.53 As high electron mobility transistors(mHEMTs) with very good device performance have been successfully fabricated.A T-shaped gate is fabricat...High performance 150-nm gate-length metamorphic Al0.48In0.52As/Ga0.47In0.53 As high electron mobility transistors(mHEMTs) with very good device performance have been successfully fabricated.A T-shaped gate is fabricated by using a combined technique of optical and e-beam photolithography,which is beneficial to decreasing parasitic capacitance and parasitic resistance of the gate.The ohmic contact resistance R c is as low as 0.03 mm when using a novel ohmic contact metal system(Ni/Ge/Ti/Au).The devices exhibit excellent DC and RF performance.A peak extrinsic transconductance of 775 mS/mm and a maximum drain current density of 720 mA/mm are achieved.The unity current gain cut-off frequency(fT) and the maximum oscillation frequency(f max) are 188.4 and 250 GHz,respectively.展开更多
An 80-nm gate length metamorphic high electron mobility transistor （mHEMT） on a GaAs substrate with high indium composite compound-channels Ino.7Ga0.aAs/Ino.6Gao.aAs and an optimized grade buffer scheme is presented...An 80-nm gate length metamorphic high electron mobility transistor （mHEMT） on a GaAs substrate with high indium composite compound-channels Ino.7Ga0.aAs/Ino.6Gao.aAs and an optimized grade buffer scheme is presented. High 2-DEG Hall mobility values of 10200 cm2/（V.s） and a sheet density of 3.5 x 10^12 cm-2 at 300 K have been achieved. The device＇s T-shaped gate was made by utilizing a simple three layers electron beam resist, instead of employing a passivation layer for the T-share gate, which is beneficial to decreasing parasitic capacitance and parasitic resistance of the gate and simplifying the device manufacturing process. The ohmic contact resistance Rc is 0.2 n.mm when using the same metal system with the gate （Pt/Ti/Pt/Au）, which reduces the manufacturing cycle of the device. The mHEMT device demonstrates excellent DC and RF characteristics. The peak extrinsic transconductance of 1.1 S/mm and the maximum drain current density of 0.86 A/mm are obtained. The unity current gain cut-off frequency （fT） and the maximum oscillation frequency （fmax） are 246 and 301 GHz, respectively.展开更多
The influence of GaAs substrate on the transmission performance of a multi-film Fabry-P＇erot filter （FPF）,fabricated by metalorganic chemical vapor deposition epitaxial growth on GaAs substrate,is investigated usin...The influence of GaAs substrate on the transmission performance of a multi-film Fabry-P＇erot filter （FPF）,fabricated by metalorganic chemical vapor deposition epitaxial growth on GaAs substrate,is investigated using the transfer matrix method.On the basis of the theoretical simulation,we determine that the quality of the resonant transmission peak of this epitaxially grown FPF （EG-FPF） deteriorates through splitting when the substrate is taken into account.Rapid periodic oscillation of peak-transmittivity along with the alteration of substrate thickness is also observed in the simulation results.Finally,a remarkably improved transmission performance of the EG-FPF is obtained by thinning the substrate down to a suitable thickness range through well-controlled grinding and polishing.展开更多
Low-frequency noises in GaAs MESFET are usually observed when investigating the drain current and substrate leakage current under sidegate bias conditions. Experimental results show that the magnitude of low-frequency...Low-frequency noises in GaAs MESFET are usually observed when investigating the drain current and substrate leakage current under sidegate bias conditions. Experimental results show that the magnitude of low-frequency noises is in a direct dependency upon the sidegate bias and the noises in drain current will disappear if sidegate bias increases more negatively beyond a certain voltage. A mechanism associated with the substrate conductivity and the channel-substrate junction modulated by sidegate bias is proposed to explain the fluctuation of low-frequency noises.展开更多
基金supported by the Science and Technology Council,Taiwan,China under the grants NSTC 109-2634-F-009-028,110-2224-E-A49-003,111-2634-F-A49-007,and 111-2218-E-A49-019-MBK,Ingentec Corp.and the Center for Emergent Functional Matter Science of Yang Ming Chiao Tung University from the Featured Areas Research Center Program within the framework of the Higher Education Sprout Project(Taiwan,China)funding and material measurement support(grant number:2022-T-018)and we thank Taiwan Semiconductor Research Institute for facilities supporting.
文摘Thin film p-side up vertical-cavity surface-emitting lasers(VCSELs)with 940 nm wavelength on a composite metal(Copper/Invar/Copper;CIC)substrate has been demonstrated by twice-bonding transfer and substrate removing techniques.The CIC substrate is a sandwich structure with a 10µm thick Copper(Cu)layer/30µm thick Invar layer/10µm thick Cu layer.The Invar layer was composed of Iron(Fe)and Nickel(Ni)with a proportion of 70:30.The thermal expansion coefcient of the composite CIC metal can match that of the GaAs substrate.It results that the VCSEL layers can be successfully transferred to CIC metal substrate without cracking.At 1 mA current,the top-emitting VCSEL/GaAs and thin-flm VCSEL/CIC had a voltage of 1.39 and 1.37 V,respectively.The optical output powers of VCSEL/GaAs and VCSEL/CIC were 21.91 and 24.40 mW,respectively.The 50µm thick CIC substrate can play a good heat dissipation function,which results in improving the electrical and optical characteristics of thin flm VCSELs/CIC.The VCSEL/CIC exhibited a superior thermal management capability as compared with VCSEL/GaAs.The obtained data suggested that VCSELs on a composite metal substrate not only afected signifcantly the characteristics of thin film VCSEL,but also improved considerably the device thermal performance.
文摘立方 Ga As (10 0 )衬底上制备的 Ga N薄膜多为立方结构且立方相为亚稳相 ,采用水平常压 MOCVD方法在立方 Ga As (10 0 )衬底上制备出了 Ga N薄膜 . XRD测试表明 ,薄膜具有单一的相 .结合对工艺条件的分析 ,认为薄膜具有六方结构 .最后 ,通过 Raman光谱测试 ,证实在立方 Ga As衬底上制备出了单相六方 Ga N薄膜 .还对立方 Ga As衬底上制备出六方 Ga
基金supported by the National Natural Science Foundation of China(Grant Nos.61274026,60274077 and 60976068)the Scientific Research Fund of Hunan Provincial Education Department(Grant No. 10C0709)the Science and Technology Plan Foundation of Hunan Province(Grant No.2011GK3058)
文摘High performance 150-nm gate-length metamorphic Al0.48In0.52As/Ga0.47In0.53 As high electron mobility transistors(mHEMTs) with very good device performance have been successfully fabricated.A T-shaped gate is fabricated by using a combined technique of optical and e-beam photolithography,which is beneficial to decreasing parasitic capacitance and parasitic resistance of the gate.The ohmic contact resistance R c is as low as 0.03 mm when using a novel ohmic contact metal system(Ni/Ge/Ti/Au).The devices exhibit excellent DC and RF performance.A peak extrinsic transconductance of 775 mS/mm and a maximum drain current density of 720 mA/mm are achieved.The unity current gain cut-off frequency(fT) and the maximum oscillation frequency(f max) are 188.4 and 250 GHz,respectively.
基金supported by the Key Laboratory of Nano-Devices and Applications,Nano-Fabrication Facility of SINANO,Chinese Academy of Sciencesthe National Natural Science Foundation of China(Nos.61274077,61474031,61464003)+3 种基金the Guangxi Natural Science Foundation(Nos.2013GXNSFGA019003,2013GXNSFAA019335)the National Basic Research Program of China(Nos.2011CBA00605,2010CB327501)the Project(No.9140C140101140C14069)the Innovation Project of GUET Graduate Education(Nos.GDYCSZ201448,GDYCSZ201449,YJCXS201529)
文摘An 80-nm gate length metamorphic high electron mobility transistor （mHEMT） on a GaAs substrate with high indium composite compound-channels Ino.7Ga0.aAs/Ino.6Gao.aAs and an optimized grade buffer scheme is presented. High 2-DEG Hall mobility values of 10200 cm2/（V.s） and a sheet density of 3.5 x 10^12 cm-2 at 300 K have been achieved. The device＇s T-shaped gate was made by utilizing a simple three layers electron beam resist, instead of employing a passivation layer for the T-share gate, which is beneficial to decreasing parasitic capacitance and parasitic resistance of the gate and simplifying the device manufacturing process. The ohmic contact resistance Rc is 0.2 n.mm when using the same metal system with the gate （Pt/Ti/Pt/Au）, which reduces the manufacturing cycle of the device. The mHEMT device demonstrates excellent DC and RF characteristics. The peak extrinsic transconductance of 1.1 S/mm and the maximum drain current density of 0.86 A/mm are obtained. The unity current gain cut-off frequency （fT） and the maximum oscillation frequency （fmax） are 246 and 301 GHz, respectively.
基金supported by the National "973" Program of China (No. 2010CB327600)the National "863" Program of China (No. 2007AA03Z418)+3 种基金the Program for Changjiang Scholars and Innovative Research Team in University (No. IRT0609)the Fundamental Research Funds for the Central University (No. BUPT2011RC0403)the National Natural Science Foundation of China (No. 61020106007)the "111" Project of China (No. B07005)
文摘The influence of GaAs substrate on the transmission performance of a multi-film Fabry-P＇erot filter （FPF）,fabricated by metalorganic chemical vapor deposition epitaxial growth on GaAs substrate,is investigated using the transfer matrix method.On the basis of the theoretical simulation,we determine that the quality of the resonant transmission peak of this epitaxially grown FPF （EG-FPF） deteriorates through splitting when the substrate is taken into account.Rapid periodic oscillation of peak-transmittivity along with the alteration of substrate thickness is also observed in the simulation results.Finally,a remarkably improved transmission performance of the EG-FPF is obtained by thinning the substrate down to a suitable thickness range through well-controlled grinding and polishing.
文摘Low-frequency noises in GaAs MESFET are usually observed when investigating the drain current and substrate leakage current under sidegate bias conditions. Experimental results show that the magnitude of low-frequency noises is in a direct dependency upon the sidegate bias and the noises in drain current will disappear if sidegate bias increases more negatively beyond a certain voltage. A mechanism associated with the substrate conductivity and the channel-substrate junction modulated by sidegate bias is proposed to explain the fluctuation of low-frequency noises.
