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聚乙烯基咔唑与十八胺的复合LB膜的激子发射性质研究 被引量:2
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作者 胡振纲 张兴堂 +4 位作者 蒋晓红 程纲 马宗锋 黄亚彬 杜祖亮 《河南大学学报(自然科学版)》 CAS 2001年第3期11-13,共3页
用聚乙烯基咔唑 (PVK)与十八胺 (OA)按照四种不同配比混合 ,采用LB技术制备了多层复合有序膜 。
关键词 PVK/OA 复合LB膜 激子发射性质 聚乙烯基咔唑 十八胺 LB技术 多层复合有序膜
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ZnCdse-ZnSe多量子阱中的激子发光
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作者 张吉英 范希武 +3 位作者 杨宝均 关郑平 吕有明 申德振 《发光学报》 EI CAS CSCD 北大核心 1994年第2期89-93,共5页
在77-300K温度下研究了Zn(1-x)CdxSe-ZnSe多量子阱(MQWs)的光致发光特性.首次在77K,Ar离子激光器的457.9nm激发下,在Zn(0.68)Cd(0.32)Se-ZnseMQWs中观测到5... 在77-300K温度下研究了Zn(1-x)CdxSe-ZnSe多量子阱(MQWs)的光致发光特性.首次在77K,Ar离子激光器的457.9nm激发下,在Zn(0.68)Cd(0.32)Se-ZnseMQWs中观测到5个发光带,其中三个发光带被归因于不同的激子发射:即n=1重空穴(HH)激子;n=l轻-重空穴(LH)激子和n=IHH激子同时发射两个纵光学声子的复合发光,并且,;n=1HH激子发光可延续至室温. 展开更多
关键词 激子 发光 光致发光 多量子阱
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纳米ZnO胶体可见发射机制的研究 被引量:10
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作者 宋国利 刘慧英 +2 位作者 孙凯霞 杨幼桐 陈保久 《发光学报》 EI CAS CSCD 北大核心 2003年第4期348-352,共5页
关于ZnO可见发射机制的讨论目前尚无定论。本文研究了不同颗粒尺寸的纳米晶ZnO胶体的发射性质,观测到两个发射带,其中之一是激子发射,另一个是可见发射;发现两个发射带的峰值能量之间存在线性关系,并由此提出了可见发射机制是来自导带... 关于ZnO可见发射机制的讨论目前尚无定论。本文研究了不同颗粒尺寸的纳米晶ZnO胶体的发射性质,观测到两个发射带,其中之一是激子发射,另一个是可见发射;发现两个发射带的峰值能量之间存在线性关系,并由此提出了可见发射机制是来自导带的电子到深陷阱的跃迁。 展开更多
关键词 纳米ZnO胶体 可见发射机制 激子发射 量子限域效应 发射带 氧化锌 半导体材料
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ZnO荧光粉中的紫外发射和绿色发射之间的关系(英文) 被引量:3
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作者 刘中仕 荆西平 +1 位作者 宋宏伟 范丽波 《物理化学学报》 SCIE CAS CSCD 北大核心 2006年第11期1383-1387,共5页
通过在低氧分压和真空中热处理ZnO粉末,获得了ZnO荧光粉.ZnO荧光粉有两个发射谱带,分别位于380 nm(紫外)和510 nm(绿色).紫外谱带对应于ZnO中的激子发射,是一个单中心发光过程;绿色谱带是一个复合发光过程,与ZnO中的本征缺陷相关,如... 通过在低氧分压和真空中热处理ZnO粉末,获得了ZnO荧光粉.ZnO荧光粉有两个发射谱带,分别位于380 nm(紫外)和510 nm(绿色).紫外谱带对应于ZnO中的激子发射,是一个单中心发光过程;绿色谱带是一个复合发光过程,与ZnO中的本征缺陷相关,如氧空位、锌空位等.实验表明,高密度的激发条件有利于紫外发射,而低氧分压下的热处理有利于提高绿色发射谱带的强度.研究结果还表明,与紫外发射相联系的激子可向与本征缺陷相联系的绿色发光中心传递能量,这种传递可能是通过激子扩散实现的. 展开更多
关键词 ZNO 发光 激子发射 本征缺陷发射 能量传递
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Doping suppresses lattice distortion of vacant quadruple perovskites to activate self-trapped excitons emission
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作者 Zhipeng Chen Fei Zhang +6 位作者 Dongwen Yang Huifang Ji Xu Chen Di Wu Xinjian Li Yu Zhang Zhifeng Shi 《Nano Research》 SCIE EI CSCD 2024年第4期3068-3078,共11页
The vacancy-ordered quadruple perovskite Cs_(4)CdBi_(2)Cl_(12),as a newly-emerging lead-free perovskite system,has attracted great research interest due to its excellent stability and direct band gap.However,the poor ... The vacancy-ordered quadruple perovskite Cs_(4)CdBi_(2)Cl_(12),as a newly-emerging lead-free perovskite system,has attracted great research interest due to its excellent stability and direct band gap.However,the poor luminescence performance limits its application in light-emitting diodes(LEDs)and other fields.Herein,for the first time,an Ag^(+)ion doping strategy was proposed to greatly improve the emission performance of Cs_(4)CdBi_(2)Cl_(12) synthesized by hydrothermal method.Density functional theory calculations combined with experimental results evidence that the weak orange emission from Cs_(4)CdBi_(2)Cl_(12) is attributed to the phonon scattering and energy level crossing due to the large lattice distortion under excited states.Fortunately,Ag^(+)ion doping breaks the intrinsic crystal field environment of Cs_(4)CdBi_(2)Cl_(12),suppresses the crossover between ground and excited states,and reduces the energy loss in the form of nonradiative recombination.At a critical doping amount of 0.8%,the emission intensity of Cs_(4)CdBi_(2)Cl_(12):Ag^(+)reaches the maximum,about eight times that of the pristine sample.Moreover,the doped Cs_(4)CdBi_(2)Cl_(12) still maintains excellent stability against heat,ultraviolet irradiation,and environmental oxygen/moisture.The above advantages make it possible for this material to be used as solid-state phosphors for white LEDs applications,and the Commission International de I’Eclairage color coordinates of(0.31,0.34)and high color rendering index of 90.6 were achieved.More importantly,the white LED demonstrates remarkable operation stability in air ambient,showing almost no emission decay after a long working time for 48 h.We believe that this study puts forward an effective ion-doping strategy for emission enhancement of vacancy-ordered quadruple perovskite Cs_(4)CdBi_(2)Cl_(12),highlighting its great potential as efficient emitter compatible for practical applications. 展开更多
关键词 Cs_(4)CdBi_(2)Cl_(12) self-trapped excitons ion doping emission enhancement stability
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Efficient tunable visible and near-infrared emission in Sb^(3+)/Sm^(3+)-codoped Cs_(2)NaLuCl_6 for near-infrared light-emitting diode,triple-mode fluorescence anti-counterfeiting and information encryption
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作者 Hui Peng Xiao Wang +5 位作者 Weiguo Huang Shuiyue Yu Linghang Kong Qilin Wei Jialong Zhao Bingsuo Zou 《Chinese Chemical Letters》 SCIE CAS CSCD 2024年第11期571-576,共6页
Rare earth ions(RE^(3+))-doped double perovskites have attracted tremendous attention for its fascinating optical properties.Nevertheless,RE^(3+)generally exhibits poor photoluminescence quantum yield(PLQY)for their p... Rare earth ions(RE^(3+))-doped double perovskites have attracted tremendous attention for its fascinating optical properties.Nevertheless,RE^(3+)generally exhibits poor photoluminescence quantum yield(PLQY)for their parity-forbidden 4f-4f transition and the low doping concentration.Herein,we reported Sb^(3+)/Sm^(3+)-codoped rare earth-based double perovskite Cs_(2)Na Lu Cl_(6)that enables efficient visible and nearinfrared(NIR)emission,which stems from self-trapped exciton(STE)and Sm^(3+),respectively.Benefit from up to 72.89%energy transfer efficiency from STE to Sm^(3+)and high doping concentrations due to similar ionic activity between Sm^(3+)and Lu^(3+),thus eruptive PLQY of 74.58%in the visible light region and 23.12%in the NIR light region can be obtained.Moreover,Sb^(3+)/Sm^(3+)-codoped Cs_(2)Na Lu Cl_(6)exhibits tunable emission characteristic in the visible light region under different excitation wavelengths,which can change from blue emission(254 nm excitation)to white emission(365 nm excitation).More particularly,only the NIR emission can be captured by the NIR camera when a 700 nm cutoff filter is added.The excellent stability and unique optical properties of Sb^(3+)/Sm^(3+)-codoped Cs_(2)Na Lu Cl_(6)enable us to demonstrate its applications in NIR light-emitting diode,triple-mode fluorescence anti-counterfeiting and information encryption.These findings provide new inspiration for the application of rare earth-based double perovskite in optoelectronic devices. 展开更多
关键词 Rare earth-based double perovskites Self-trapped exciton Near-infrared emission Energy transfer Multifunctional applications
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Antimony-Doping Induced Highly Efficient Warm-White Emission in Indium-Based Zero-Dimensional Perovskites 被引量:2
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作者 Xingyi Liu Xi Xu +4 位作者 Ben Li Yongqi Liang Qi Li Hong Jiang Dongsheng Xu 《CCS Chemistry》 CAS 2020年第2期216-224,共9页
Indium(In)-based halide perovskites are desirable for next-generation phosphors and emitting devices,due to their broad emission,nontoxicity,and oxidization avoidance capabilities.However,the In-based perovskites alwa... Indium(In)-based halide perovskites are desirable for next-generation phosphors and emitting devices,due to their broad emission,nontoxicity,and oxidization avoidance capabilities.However,the In-based perovskites always exhibit low external photoluminescence quantum efficiency(PLQE)as a result of their weak light absorption near the corresponding excitation region,and thus,are limited in extended applications.Herein,we have developed an antimony(Sb)-doping strategy to improve the absorption ability of Cs2InCl5·H2O in the ultraviolet region.Excitingly,we obtained a warm-light phosphor with ultrahigh external(internal)PLQE of 72.8%(86.7%).Typically,upon 1.5%Sb doping,the single-crystalline Cs2InCl5·H2O perovskite displayed a stronger warm-light emission at∼610 nm with a large Stokes shift of 295 nm and full width at half maximum(FWHM)of 164 nm.Density functional theory(DFT)calculations revealed that the Sb-doping induced an impurity level in the bandgap,increasing the density of state(DOS),and promoted more carriers into the conduction band maximum.Furthermore,external PLQE from 18%to 59%could be realized in other zero-dimensional In-based perovskites through the same doping strategy. 展开更多
关键词 lead-free perovskite luminescence self-trapped exciton emission quantum efficiency antimony doping
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退火温度对等离子体增强化学气相沉积方法生长的ZnO薄膜质量的影响 被引量:1
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作者 支壮志 王博 肇常胜 《真空科学与技术学报》 EI CAS CSCD 北大核心 2004年第3期187-190,共4页
研究ZnO薄膜质量与退火温度的关系 ,为了获得高质量的晶体薄膜 ,采用PECVD方法在硅 (1 0 0 )衬底上生长ZnO薄膜 ,生长温度为 1 2 0℃ ,然后分别在氧气环境下退火 (6 0 0℃~ 1 0 0 0℃ ) 1h。X射线衍射谱和原子力显微镜 (AFM)照片结果... 研究ZnO薄膜质量与退火温度的关系 ,为了获得高质量的晶体薄膜 ,采用PECVD方法在硅 (1 0 0 )衬底上生长ZnO薄膜 ,生长温度为 1 2 0℃ ,然后分别在氧气环境下退火 (6 0 0℃~ 1 0 0 0℃ ) 1h。X射线衍射谱和原子力显微镜 (AFM)照片结果表明随着退火温度的升高 ,晶体择优取向明显 ,晶粒平均尺寸增大 ,到 90 0℃时 ,晶粒平均尺寸达到 38nm。光致发光谱的结果表明 ,随着退火温度的升高 ,发光峰的半高宽 (FWHM)逐渐地变窄 ,到 90 0℃时 ,达到 92meV ,晶体质量得到了明显提高。通过对变温光谱的拟合计算 ,得到激子束缚能为 5 9meV 。 展开更多
关键词 ZNO薄膜 等离子体增强化学气相沉积 PECVD 退火温度 激子发射 蓝移
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单量子点光谱与激子动力学研究进展 被引量:1
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作者 李斌 张国峰 +4 位作者 陈瑞云 秦成兵 胡建勇 肖连团 贾锁堂 《物理学报》 SCIE EI CAS CSCD 北大核心 2022年第6期312-328,共17页
胶体半导体量子点具有宽带吸收、窄带发射、发光量子产率高、发射波长连续可调等优点,是制备发光二极管、太阳能电池、探测器、激光器等光电器件的优质材料.单量子点光谱能够消除系综平均效应,可以在单粒子水平上获取量子点材料的结构... 胶体半导体量子点具有宽带吸收、窄带发射、发光量子产率高、发射波长连续可调等优点,是制备发光二极管、太阳能电池、探测器、激光器等光电器件的优质材料.单量子点光谱能够消除系综平均效应,可以在单粒子水平上获取量子点材料的结构和动力学信息及与其他材料间的电荷、能量转移动力学等.相关研究结果能够指引量子点材料的设计和为量子点的相关应用提供机理基础.另外基于单量子点可以开展纳米尺度上光与物质的相互作用研究,制备单光子源和纠缠光子源等.本文综述了单量子点光谱与激子动力学近期的相关研究进展,主要包括单量子点的光致发光闪烁特性和调控方式、单激子和多激子动力学研究及双激子辐射特性的调控等.最后简要地讨论了单量子点光谱未来可能的发展趋势. 展开更多
关键词 单量子点光谱 激子动力学 光致发光闪烁 双激子辐射
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ZnSe-ZnS多量子阱中激子动力学及受激发射
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作者 赵福潭 苏锡安 +2 位作者 王淑梅 陈进军 范希武 《发光学报》 EI CAS CSCD 北大核心 1997年第1期23-27,共5页
本文讨论了在ZnSe薄膜材料及ZnSe-ZnS多量子阱中宽阱材料和窄阱材料的激子弛豫过程和在窄阱材料中激子受激发射
关键词 量子阱 激子 弛豫过程 受激发射 半导体
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铕掺杂二氧化钛发光性质的探究 被引量:1
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作者 周岩 郭建 +1 位作者 赵倩 肖林久 《辽宁化工》 CAS 2021年第8期1144-1146,1175,共4页
以Eu(NO_(3))3·6H_(2)O为铕源,采用溶胶-凝胶法制备TiO_(2)粉体和掺杂Eu^(3+)的TiO_(2)粉体。研究了Eu^(3+)离子掺杂对Ti O_(2)基质物相、发光性能的影响。利用X射线衍射(XRD)、荧光光谱进行表征。通过荧光光谱(PL)分析可知,Eu^(3+... 以Eu(NO_(3))3·6H_(2)O为铕源,采用溶胶-凝胶法制备TiO_(2)粉体和掺杂Eu^(3+)的TiO_(2)粉体。研究了Eu^(3+)离子掺杂对Ti O_(2)基质物相、发光性能的影响。利用X射线衍射(XRD)、荧光光谱进行表征。通过荧光光谱(PL)分析可知,Eu^(3+)掺杂二氧化钛会降低激子发光的荧光强度和缩减激子发光的光响应范围,从而会增强二氧化钛的光催化效率;同时Eu^(3+)与二氧化钛之间存在能量传递,Eu^(3+)可以吸收二氧化钛非辐射跃迁产生的能量,实现本身的能级跃迁。 展开更多
关键词 溶胶-凝胶 二氧化钛 铕掺杂 激子发光
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InAs单量子点中级联辐射光子的关联测量 被引量:1
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作者 李园 窦秀明 +3 位作者 常秀英 倪海桥 牛智川 孙宝权 《物理学报》 SCIE EI CAS CSCD 北大核心 2011年第1期695-699,共5页
利用分子束外延生长InAs单量子点样品,温度为5K时,测量了单量子点中单、双激子自发辐射的荧光(PL)光谱.研究了单、双激子发光强度随激发功率的变化及对应发光峰的偏振特性和精细结构劈裂.基于Hanbury-Brown Twiss(HBT)实验,测量了单、... 利用分子束外延生长InAs单量子点样品,温度为5K时,测量了单量子点中单、双激子自发辐射的荧光(PL)光谱.研究了单、双激子发光强度随激发功率的变化及对应发光峰的偏振特性和精细结构劈裂.基于Hanbury-Brown Twiss(HBT)实验,测量了单、双激子间发光光谱的关联函数,证实了其发光过程为级联发射过程. 展开更多
关键词 InAs单量子点 单、双激子 荧光光谱 级联辐射
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Methanol-induced luminescence vapochromism based on a Sb^(3+)-doped organic indium halide hybrid
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作者 Cui-Mi Shi Jin-Long Li +4 位作者 Liang-Jin Xu Yue Wu Hong-Li Xuan Jin-Yun Wang Zhong-Ning Chen 《Science China Materials》 SCIE EI CAS CSCD 2022年第7期1876-1881,共6页
Ion doping has been demonstrated as a practical approach to achieving highly efficient luminescence in both inorganic phosphors and organic-inorganic hybrids.The asformed doping species show great potential in optoele... Ion doping has been demonstrated as a practical approach to achieving highly efficient luminescence in both inorganic phosphors and organic-inorganic hybrids.The asformed doping species show great potential in optoelectronic applications due to their high photoluminescence quantum yield(PLQY)and excellent stability.Herein,we report highly emissive Sb^(3+)-doped indium halides(C_(6)H_(18)N_(2))InCl_(5)·H_(2)O:Sb(C_(6)H_(18)N_(2)^(2+)=N,N,N',N'-tetramethylethane-1,2-diammonium)prepared by solution evaporation methods with an emission that peaked at 565 nm and a PLQY of 74.6%.Photophysical characterizations and density functional theory computational studies verify the broadband emission originating from a self-trapped exciton.Interestingly,a drastic red shift of the emission peak from 565 to 663 nm with yellow luminescence turning to red is observed once the(C_(6)H_(18)N_(2))InCl_(5)·H_(2)O:Sb hybrid is exposed to methanol vapor.Moreover,when the methanol-exposed hybrid is put in air,the emission reverts to 565 nm in several minutes.Single-crystal X-ray diffraction studies show a subsequent structure distortion upon the coordination of methanol to the Sb(III)center,which is responsible for the drastic red shift of the emission.Encouragingly,we found that(C_(6)H_(18)N_(2))InCl_(5)·H_(2)O:Sb exhibits a specific response to methanol vapor after screening a series of volatile organic compounds with different polarities.Besides,a negligible change of the emission intensity is observed after several cycles of uptaking and releasing methanol.The high fatigue resistance and specific solvent response of the Sb^(3+)-doped indium halide make it a very promising methanol detector. 展开更多
关键词 organic metal halide hybrid Sb^(3+) doped self-trapped exciton emission luminescence vapochromism
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纤锌矿ZnSnN_(2)/In_(x)Ga_(1-x)N柱形量子点中的激子态和带间光跃迁
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作者 郑冬梅 黄思俞 许晓赋 《量子光学学报》 北大核心 2021年第4期342-351,共10页
基于有效质量近似和变分原理,考虑内建电场效应和量子点的三维约束效应,理论研究了纤锌矿ZnSnN_(2)/In_(x)Ga_(1-x)N柱形量子点中基态激子结合能、带间发光波长、激子辐射寿命随量子点尺寸(高度L和半径R)及In_(x)Ga_(1-x)N中In含量x的... 基于有效质量近似和变分原理,考虑内建电场效应和量子点的三维约束效应,理论研究了纤锌矿ZnSnN_(2)/In_(x)Ga_(1-x)N柱形量子点中基态激子结合能、带间发光波长、激子辐射寿命随量子点尺寸(高度L和半径R)及In_(x)Ga_(1-x)N中In含量x的变化关系,并与In_(x)Ga_(1-x)N量子点的激子态和带间光跃迁作比较。结果表明:当x<0.3时,基态激子结合能随着量子点尺寸及In含量的增加而减小。激子带间发光波长随量子点尺寸的增大而红移;随着In含量的增加,当量子点高度L<2.2 nm(L>2.2 nm)时,发光波长红移(蓝移)。激子辐射寿命随着量子点尺寸的增加而增加,随着In含量的增加而减小。此外,随In含量增加而线性减小的内建电场使基态激子结合能减小,带间发光波长红移,激子辐射寿命增大。受沿着异质结生长方向的内建电场的影响,量子点高度L的变化对激子光学性质的影响要比量子点半径R的变化对激子光学性质的影响更显著。而与In_(x)Ga_(1-x)N量子点相比,ZnSnN_(2)/In_(x)Ga_(1-x)N量子点中激子的结合能、带间发光波长及激子辐射寿命都较大,尤其对于In含量小的量子点。 展开更多
关键词 ZnSnN_(2)量子点 激子 内建电场 发光波长 激子寿命
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Ionized Acceptor Bound Exciton States in Wurtzite GaN/Al_xGa(1-x)N Cylindrical Quantum Dot
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作者 郑冬梅 王宗箎 《Communications in Theoretical Physics》 SCIE CAS CSCD 2012年第1期151-156,共6页
Based on the framework of the effective-mass approximation, the ionized acceptor bound exciton (A- X) binding energy and the emission wavelength are investigated for a cylindrical wurtzite (WZ) GaN/A1x Ga1-xN quan... Based on the framework of the effective-mass approximation, the ionized acceptor bound exciton (A- X) binding energy and the emission wavelength are investigated for a cylindrical wurtzite (WZ) GaN/A1x Ga1-xN quantum dot (QD) with finite potential barriers by means of a variational method. Numerical results show that the binding energy and the emission wavelength highly depend on the QD size, the position of the ionized acceptor and the Al composition x of the barrier material AIxGal-xN. The binding energy and the emission wavelength are larger when the acceptor is located in the vicinity of the left interface of the QD. In particular, the binding energy of ( A-, X) complex is insensitive to the dot height when the acceptor is located at the left boundary of the QD. The ionized acceptor bound exciton binding energy and the emission wavelength are both increased if Al composition x is increased. 展开更多
关键词 quantum dot ionized acceptor bound exciton binding energy emission wavelength
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MOCVD法生长的ZnSe外延单晶膜的光致发射光谱特性的研究
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作者 江向平 江风益 +2 位作者 程齐贤 潘传康 肖新民 《南昌大学学报(工科版)》 CAS 1991年第4期51-55,共5页
本文研究了在MOCVD系统上生长的ZnSe单晶膜的光致发光特性,观察到77K下自由激子发射,束缚激子发射,施主受主对发射及其声子伴线。Raman背散射测量表明ZnSe LO声子能量31mev。
关键词 自由激子谱 束缚激去谱 施主受主对DAP LO声子
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微纳跨尺度ZnO结构的紫外发射机理研究 被引量:7
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作者 吴春霞 周明 +4 位作者 冯程程 袁润 李刚 马伟伟 蔡兰 《物理学报》 SCIE EI CAS CSCD 北大核心 2008年第6期3887-3891,共5页
利用气相输运的方法在Si(100)衬底上生长了ZnO的微纳跨尺度结构.扫描电镜照片可以明显地看到样品表面为椎顶六角微米柱-纳米棒的复合结构.样品在室温下的光致发光谱出现了很强的紫外发射峰,没有观察到与杂质或缺陷相关的深能级发射,表... 利用气相输运的方法在Si(100)衬底上生长了ZnO的微纳跨尺度结构.扫描电镜照片可以明显地看到样品表面为椎顶六角微米柱-纳米棒的复合结构.样品在室温下的光致发光谱出现了很强的紫外发射峰,没有观察到与杂质或缺陷相关的深能级发射,表明样品有很好的光学质量.通过详细的研究样品的紫外发射谱与温度(83—307K)的依赖关系,发现在室温下样品的近带边发射包含两个部分,分别与自由激子发射和自由载流子到施主(受主)的跃迁(FB跃迁)相关,这个施主(受主)束缚态的离化能为124·6meV. 展开更多
关键词 ZnO微纳跨尺度结构 光致发光谱 自由载流子到施主(受主)的跃迁 自由激子发射
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Boosting triplet self-trapped exciton emission in Te(IV)-doped Cs_(2)SnCl_(6) perovskite variants 被引量:4
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作者 Ruosheng Zeng Kun Bai +9 位作者 Qilin Wei Tong Chang Jun Yan Bao Ke Jialuo Huang Liushun Wang Weichang Zhou Sheng Cao Jialong Zhao Bingsuo Zou 《Nano Research》 SCIE EI CAS CSCD 2021年第5期1551-1558,共8页
Perovskite variants have attracted wide interest because of the lead-free nature and strong self-trapped exciton (STE) emission. Divalent Sn(II) in CsSnX3 perovskites is easily oxidized to tetravalent Sn(IV), and the ... Perovskite variants have attracted wide interest because of the lead-free nature and strong self-trapped exciton (STE) emission. Divalent Sn(II) in CsSnX3 perovskites is easily oxidized to tetravalent Sn(IV), and the resulted Cs2SnCl6 vacancy-ordered perovskite variant exhibits poor photoluminescence property although it has a direct band gap. Controllable doping is an effective strategy to regulate the optical properties of Cs2SnX6. Herein, combining the first principles calculation and spectral analysis, we attempted to understand the luminescence mechanism of Te4+-doped Cs2SnCl6 lead-free perovskite variants. The chemical potential and defect formation energy are calculated to confirm theoretically the feasible substitutability of tetravalent Te4+ ions in Cs2SnCl6 lattices for the Sn-site. Through analysis of the absorption, emission/excitation, and time-resolved photoluminescence (PL) spectroscopy, the intense green-yellow emission in Te4+:Cs2SnCl6 was considered to originate from the triplet Te(IV) ion 3P1→1S0 STE recombination. Temperature-dependent PL spectra demonstrated the strong electron-phonon coupling that inducing an evident lattice distortion to produce STEs. We further calculated the electronic band structure and molecular orbital levels to reveal the underlying photophysical process. These results will shed light on the doping modulated luminescence properties in stable lead-free Cs2MX6 vacancy-ordered perovskite variants and be helpful to understand the optical properties and physical processes of doped perovskite variants. 展开更多
关键词 Cs_(2)SnCl_(6)perovskite variants equivalent ion doping self-trapped exciton(STE)emission electron-phonon coupling first principles calculation
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新型有机电致荧光材料研究进展 被引量:3
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作者 朱琦 李云辉 +2 位作者 赵学森 耿爱芳 马玉芹 《材料导报》 EI CAS CSCD 北大核心 2018年第19期3473-3477,共5页
有机发光二极管因独特的优势被看作新一代的照明及平面显示技术,引起了研究人员的广泛关注。传统的荧光材料仅能利用单重态激子发光,因而效率并不理想。近年来,能够利用三重态激子能量发光的新型荧光材料的研究实现了新的突破。按照三... 有机发光二极管因独特的优势被看作新一代的照明及平面显示技术,引起了研究人员的广泛关注。传统的荧光材料仅能利用单重态激子发光,因而效率并不理想。近年来,能够利用三重态激子能量发光的新型荧光材料的研究实现了新的突破。按照三重态激子到单重态激子的转化机理,荧光材料可以分为三重态-三重态湮灭、热致延迟荧光和局域电荷转移杂化激发态三种特殊类型。本文围绕着这几种类型的荧光材料展开了探讨,介绍了有机电致荧光器件的概况以及不同类型荧光材料的发光机理,并从分子设计的角度说明了高性能发光器件的设计思路。 展开更多
关键词 有机电致发光 三重态激子荧光材料 发光效率
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GaN/Al_xGa_(1-x)N量子点中类氢杂质位置对激子态的影响 被引量:2
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作者 戴宪起 郑冬梅 黄凤珍 《河南师范大学学报(自然科学版)》 CAS CSCD 北大核心 2005年第4期38-42,共5页
利用有效质量方法和变分原理,考虑内建电场效应和量子点(QD)的三维约束效应,研究类氢杂质对GaN/AlxGa1-xN量子点中激子态的影响.结果表明:量子点中心的类氢杂质使激子的结合能升高,基态能降低,QD系统的稳定性增强,发光波长红移.杂质位... 利用有效质量方法和变分原理,考虑内建电场效应和量子点(QD)的三维约束效应,研究类氢杂质对GaN/AlxGa1-xN量子点中激子态的影响.结果表明:量子点中心的类氢杂质使激子的结合能升高,基态能降低,QD系统的稳定性增强,发光波长红移.杂质位于量子点上界面时,激子的基态能最小,结合能最大,系统最稳定.随着杂质从量子点的上界面沿着Z轴移至下界面,激子基态能增大,结合能减小,带间发光蓝移. 展开更多
关键词 类氢杂质 量子点 自发极化和压电极化 激子结合能 发光波长
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