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结构变化对Cu/Sn-58Bi/Cu微焊点电迁移行为和组织演变的影响 被引量:4
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作者 岳武 秦红波 +2 位作者 周敏波 马骁 张新平 《金属学报》 SCIE EI CAS CSCD 北大核心 2012年第6期678-686,共9页
利用SEM观察、聚焦离子束(FIB)微区分析和有限元模拟对比研究了直角型和线型Cu/Sn-58Bi/Cu微焊点在高电流密度下(1.5×10~4A/cm^2)的电迁移行为,从原子扩散距离和微区域电阻变化及阴阳极物相变化的角度研究了焊点结构变化对电迁移... 利用SEM观察、聚焦离子束(FIB)微区分析和有限元模拟对比研究了直角型和线型Cu/Sn-58Bi/Cu微焊点在高电流密度下(1.5×10~4A/cm^2)的电迁移行为,从原子扩散距离和微区域电阻变化及阴阳极物相变化的角度研究了焊点结构变化对电迁移影响的机理.结果表明,2种焊点通电112和224 h后均发生了Bi向阳极迁移并聚集及Sn在阴极富集的现象;直角型焊点阳极由于Bi聚集后膨胀而产生压应力进而导致小丘状凸起和微裂纹出现,而阴极存在拉应力引发凹陷和微裂纹,且沿界面呈非均匀变化.微区组织分析表明,电迁移作用下焊点内部Bi原子的扩散速度大于Sn原子的扩散速度.观察分析和模拟结果还表明,具有结构不均匀性的直角型焊点中电子流易向电阻较小区域聚集而产生电流拥挤效应,这是引起直角型焊点电迁移现象严重的根本原因. 展开更多
关键词 焊点结构 电迁移 组织演变 SnBi钎料 电流拥挤效应
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Sn-Ag-Cu无铅钎料互连焊点的电迁移研究进展 被引量:3
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作者 王玲 刘晓剑 万超 《电子工艺技术》 2013年第2期73-78,共6页
电迁移问题作为影响焊点可靠性的关键问题之一,容易导致焊点出现裂纹、丘凸和空洞等焊接缺陷。其失效机制有电流拥挤效应、焦耳热效应、极化效应和金属间化合物失效等。聚焦Sn-Ag-Cu系无铅钎料焊点的电迁移问题,介绍了这一领域电迁移的... 电迁移问题作为影响焊点可靠性的关键问题之一,容易导致焊点出现裂纹、丘凸和空洞等焊接缺陷。其失效机制有电流拥挤效应、焦耳热效应、极化效应和金属间化合物失效等。聚焦Sn-Ag-Cu系无铅钎料焊点的电迁移问题,介绍了这一领域电迁移的失效机制、影响因素和防止措施的研究现状,并展望了今后的研究发展趋势。 展开更多
关键词 SN-AG-CU无铅钎料 电迁移 电流拥挤效应 焦耳热效应 极化效应
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Design of MCI single and symmetrical on-chip spiral inductors 被引量:2
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作者 Bo Han Shibing Wang Xiaofeng Shi 《Journal of Semiconductors》 EI CAS CSCD 2017年第6期88-92,共5页
In this paper,the MCI(multipath crossover interconnection)technique for octagon single and symmetrical spiral inductors has been presented to improve the quality factor.The metal wires of the single and symmetrical ... In this paper,the MCI(multipath crossover interconnection)technique for octagon single and symmetrical spiral inductors has been presented to improve the quality factor.The metal wires of the single and symmetrical inductors formed by the top metal are divided into multiple segments according to the depth of the skin effects.The outermost path of the metal is crossover-interconnected to the innermost path by the underlayer metal and via The crossover technique makes the lengths of the total current paths between two ports approximately equal to each other.Therefore,the induced magnetic flux and resistance of each path can be balanced and the Q-factor of spiral inductors can be enhanced.The proposed MCI technique has been validated by the electromagnetic simulation with the 130-nm 1P6M SiGe BiCMOS process.For the devices with occupying areas of 240 240 μm^2,results of electromagnetic simulation show that about 24%improvement in the Q-peak(3.3 GHz)of the MCI single inductor as compared to conventional single inductors(3.1 GHz),and about 88.1%improvement in the Q-peak(3.2 GHz)of the MCI symmetrical inductor as compared to conventional symmetrical inductors(1.8 GHz). 展开更多
关键词 crossover interconnection spiral inductor high Q-factor current crowding effect skin effect
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改善高频大功率晶体管二次击穿提高f_T的特殊设计方法 被引量:2
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作者 白宏光 葛虹宇 《辽宁大学学报(自然科学版)》 CAS 1996年第1期61-65,共5页
本文主要讨论改善高频大功率晶体管正偏(电流集中型)二次击穿并以3DA150、3CA150型高频大功率晶体管为例,介绍一种特殊的版图设计方法,使发射结面积得到充分利用,有效地提高了电流容量,消除了大电流时发射极电流集边... 本文主要讨论改善高频大功率晶体管正偏(电流集中型)二次击穿并以3DA150、3CA150型高频大功率晶体管为例,介绍一种特殊的版图设计方法,使发射结面积得到充分利用,有效地提高了电流容量,消除了大电流时发射极电流集边效应,改善了电流集中型二次击穿,减慢了大电流时β0的衰减程度,从而相应地提高了特征频率fT. 展开更多
关键词 大功率晶体管 二次击穿 特征频率 高频晶体管
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垂直发射极镇流电阻在HBT中的发射极电流集边效应中的作用 被引量:2
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作者 常玉春 崔洪峰 +4 位作者 王金忠 宋俊峰 HailinLuo Y.Wang 杜国同 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2002年第6期624-627,共4页
在异质结双极晶体管 (HBT)功率器件中可以引入外延生长的发射极镇流电阻 ,以改善其热稳定性 .通过理论计算和实验表明这种低掺杂的外延层不仅能作为镇流电阻 ,而且在功率
关键词 垂直发射极 HBT 异质结双极晶体管 镇流电阻 电流集边效应
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Current diffusion and efficiency droop in vertical light emitting diodes
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作者 R Q Wan T Li +6 位作者 Z Q Liu X Y Yi J X Wang J H Li W H Zhu J M Li L C Wang 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第1期561-569,共9页
Current diffusion is an old issue, nevertheless, the relationship between the current diffusion and the efficiency of light emitting diodes(LEDs) needs to be further quantitatively clarified. By incorporating current ... Current diffusion is an old issue, nevertheless, the relationship between the current diffusion and the efficiency of light emitting diodes(LEDs) needs to be further quantitatively clarified. By incorporating current crowding effect(CCE) into the conventional ABC model, we have theoretically and directly correlated the current diffusion and the internal quantum efficiency(IQE), light extraction efficiency(LEE), and external quantum efficiency(EQE) droop of the lateral LEDs.However, questions still exist for the vertical LEDs(V-LEDs). Here firstly the current diffusion length L_s(I) and L_s(II) have been clarified. Based on this, the influence of CCE on the EQE, IQE, and LEE of V-LEDs were investigated. Specifically to our V-LEDs with moderate series resistivity, L_s(III) was developed by combining L_s(I) and L_s(II), and the CCE effect on the performance of V-LEDs was investigated. The wall-plug efficiency(WPE) of V-LEDs ware investigated finally. Our works provide a deep understanding of the current diffusion status and the correlated efficiency droop in V-LEDs, thus would benefit the V-LEDs' chip design and further efficiency improvement. 展开更多
关键词 efficiency droop VERTICAL light EMITTING diodes current crowding effect current BLOCKING layer
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一种CMOS新型ESD保护电路设计 被引量:1
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作者 沈放 陈巍 +1 位作者 黄灿英 陈艳 《现代电子技术》 北大核心 2015年第24期128-131,共4页
金属氧化物半导体(MOS)器件的缩放技术使集成电路芯片面临着严重的静电放电(ESD)威胁,而目前采用的ESD保护电路由于电流集边效应等原因,普遍存在着抗静电能力有限、占用较大芯片面积等问题。根据全芯片ESD防护机理,基于SMIC 0.18μm工... 金属氧化物半导体(MOS)器件的缩放技术使集成电路芯片面临着严重的静电放电(ESD)威胁,而目前采用的ESD保护电路由于电流集边效应等原因,普遍存在着抗静电能力有限、占用较大芯片面积等问题。根据全芯片ESD防护机理,基于SMIC 0.18μm工艺设计并实现了一种新型ESD保护电路,其具有结构简单、占用芯片面积小、抗ESD能力强等特点。对电路的测试结果表明,相对于相同尺寸栅极接地结构ESD保护电路,新型ESD保护电路在降低35%芯片面积的同时,抗ESD击穿电压提升了32%,能够有效保护芯片内部电路免受ESD造成的损伤和降低ESD保护电路的成本。 展开更多
关键词 静电放电(ESD)保护 栅极接地NMOS 抗静电 电流集边效应 低成本
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BCD工艺中大电流下纵向双极晶体管的电流集边效应研究
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作者 彭洪 王蕾 +3 位作者 谢儒彬 顾祥 李燕妃 洪根深 《电子与封装》 2024年第3期87-91,共5页
在大电流条件下,随着电流密度的增加,发射区结电流集边效应、基区电导调制效应、基区展宽效应会随之出现。基于研究单位的BCD工艺,在集成CMOS和DMOS的基础上集成功率纵向NPN双极晶体管用于输出。设计了75μm×4μm、50μm×6μm... 在大电流条件下,随着电流密度的增加,发射区结电流集边效应、基区电导调制效应、基区展宽效应会随之出现。基于研究单位的BCD工艺,在集成CMOS和DMOS的基础上集成功率纵向NPN双极晶体管用于输出。设计了75μm×4μm、50μm×6μm、30μm×10μm三种不同尺寸的发射极并进行TCAD仿真研究。在发射极面积相同的情况下,发射极长宽比越小,TCAD可观察到的电流集边效应越严重,最终流片并进行测试验证,得出75μm×4μm的细长结构尺寸能够提升晶体管在大电流下的放大能力,较30μm×10μm的结构提升约11.4%。 展开更多
关键词 双极晶体管 功率 发射区结电流集边效应 大电流
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Effect of pad geometry on current density and temperature distributions in solder bump joints
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作者 李毅 赵修臣 +1 位作者 刘颖 李洪洋 《Journal of Beijing Institute of Technology》 EI CAS 2014年第2期270-278,共9页
Three-dimensional thermo-electrical finite element analyses were conducted to simulate the current density and temperature distributions in solder bump joints with different pad geometries.The effects of pad thickness... Three-dimensional thermo-electrical finite element analyses were conducted to simulate the current density and temperature distributions in solder bump joints with different pad geometries.The effects of pad thickness,diameter and shape on current density and temperate distributions were investigated respectively.It was found that pads with larger thickness or/and diameter could reduce current density and temperature in solder bump significantly.Pad shapes affected the current density and temperature distributions in solder bumps.The relatively low current density and temperature didn't occur in the bump joint with traditional rounded pad but occurred in bump joints with octagonal and nonagonal pads respectively.Therefore,optimized pad geometry may be designed to alleviate the current crowding effect and reduce the bump temperature,and therefore delay electromigration failure and increase the mean-time-to-failure. 展开更多
关键词 electromigration solder bump joint pad geometry current crowding effect current density temperature
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Study of Magnetic Force Distribution for Electromagnetic V-shape Bending Forming of Small Size Flat Sheet
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作者 Xiao-Wei Chen Wen-Ping Wang +5 位作者 Min Wan Long Pan An-Lin Long Wei-Ren Xiong Cheng-Long Shi Zhong-Yu Zhou 《Journal of Harbin Institute of Technology(New Series)》 EI CAS 2014年第1期25-31,共7页
Electromagnetic V-shape bending of small size sheet blank is investigated numerically and experimentally. Three-dimensional electromagnetic field models are established to calculate the magnetic force distribution on ... Electromagnetic V-shape bending of small size sheet blank is investigated numerically and experimentally. Three-dimensional electromagnetic field models are established to calculate the magnetic force distribution on the sheet by software ANSYS / EMAG. Series of electromagnetic V-shape bending forming experiments are presented,in which small size uniform pressure coil and big size round flat spiral coil are used. The results show that small size uniform pressure coil is not suitable for electromagnetic forming of small size flat sheet,and the coil is susceptible to failure such as bulging,ablation and cracking. When the plane dimension of round flat spiral coil is bigger than sheet blank sizes,the induced current crowding effect will be resulted which seriously influence the magnetic force distribution on the sheet. In this case,magnetic force distribution can be adjusted through the change of the relative position between coil and sheet,the desired deformation can be obtained finally. Therefore,big size round flat spiral coil can be well applied to electromagnetic V-shape bending forming of small size flat sheet. 展开更多
关键词 Electromagnetic forming Small size sheet blank Induced current crowding effect Magnetic force distribution
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磁头内置DFH控制元件可靠性的有限元分析 被引量:1
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作者 肖祥慧 彭敏放 +2 位作者 黎福海 詹杰 唐荣军 《电子学报》 EI CAS CSCD 北大核心 2012年第10期2140-2144,共5页
磁头内置DFH控制元件的可靠性设计评估十分重要,目前工艺上多采用经验数据指导的方法,误差十分大,理论上是根据传统流体力学的基本原理,利用Matlab软件实现模拟评估的,由于元件尺寸限制,模拟算法会随着舍入误差的叠加而失效.本文使用AN... 磁头内置DFH控制元件的可靠性设计评估十分重要,目前工艺上多采用经验数据指导的方法,误差十分大,理论上是根据传统流体力学的基本原理,利用Matlab软件实现模拟评估的,由于元件尺寸限制,模拟算法会随着舍入误差的叠加而失效.本文使用ANSYS软件,通过实验获得建立模型的基本参数,选择了合适的单元类型、材料属性,给出了磁头的有限元模型.利用模型对元件进行的寿命预测实验表明,有限元模型分析DFH控制元件的设计可靠性问题是有效的,并且得出以下结论:在50Ω的新型DFH计算结果中,其热效应强度比传统屏蔽层大10%以上,实际的寿命失败样品问题区域都在线路的转角处. 展开更多
关键词 DFH 可靠性分析 有限元 热效应 电流拥挤效应
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