Polycrystalline CuInS2 （CIS） films were prepared by sulphurization of Cu-In films. The surface morphology and phase composition of the as-grown film, the KCN-etched film, and the annealed KCN-etched film were invest...Polycrystalline CuInS2 （CIS） films were prepared by sulphurization of Cu-In films. The surface morphology and phase composition of the as-grown film, the KCN-etched film, and the annealed KCN-etched film were investigated. During the sulphurization, the secondary CuxS phase segregated on the surface of the as-grown films. To improve the crystalline quality of CuInS2 films, a series of post-grown treatments, such as KCN-etching and vacuum annealing KCN-etched films, were performed on the as-grown films. Both as-grown and post-treated films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, and energy dispersive spectroscopy （EDS）. The results indicated that a CuxS secondary phase segregated on the surface of the as-grown film, which could be removed effectively by KCN etching. After the vacuum annealing treatment, the KCN-etched film had a sphalerite structure with （112） preferred orientation. Meanwhile, the crystalline quality of the CIS film was significantly improved, which provided a novel method to improve the performance of thin film solar cells.展开更多
CuInS2 thin films were prepared by sulfurization of Cu-In precursors.The influences of the deposition sequence of Cu and In layers,such as Cu/In,Cu/In/In,and In/Cu/In,on structure,topography,and optical properties of ...CuInS2 thin films were prepared by sulfurization of Cu-In precursors.The influences of the deposition sequence of Cu and In layers,such as Cu/In,Cu/In/In,and In/Cu/In,on structure,topography,and optical properties of CuInS2 thin films were investigated.X-ray diffraction results show that the deposition sequence of Cu and In layers affects the crystalline quality of CuInS2 films.Atomic force microstructure images reveal that the grain size and surface roughness are related to the deposition sequence used.When the deposition sequence of precursor is In/Cu/In,the CuInS2 thin films show a single-phase chalcopyrite structure with (112) preferred orientation.The surface morphology of CIS films is uniform and compacted.The absorption coefficient is larger than 104 cm-1 with optical band gap Eg close to 1.4 eV.展开更多
基金the National High-Tech Research and Development Program of China (No. 2006AA03Z2370)
文摘Polycrystalline CuInS2 （CIS） films were prepared by sulphurization of Cu-In films. The surface morphology and phase composition of the as-grown film, the KCN-etched film, and the annealed KCN-etched film were investigated. During the sulphurization, the secondary CuxS phase segregated on the surface of the as-grown films. To improve the crystalline quality of CuInS2 films, a series of post-grown treatments, such as KCN-etching and vacuum annealing KCN-etched films, were performed on the as-grown films. Both as-grown and post-treated films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, and energy dispersive spectroscopy （EDS）. The results indicated that a CuxS secondary phase segregated on the surface of the as-grown film, which could be removed effectively by KCN etching. After the vacuum annealing treatment, the KCN-etched film had a sphalerite structure with （112） preferred orientation. Meanwhile, the crystalline quality of the CIS film was significantly improved, which provided a novel method to improve the performance of thin film solar cells.
基金Project(2006AA03Z2370) supported by the High-Tech Research and Development Program of China
文摘CuInS2 thin films were prepared by sulfurization of Cu-In precursors.The influences of the deposition sequence of Cu and In layers,such as Cu/In,Cu/In/In,and In/Cu/In,on structure,topography,and optical properties of CuInS2 thin films were investigated.X-ray diffraction results show that the deposition sequence of Cu and In layers affects the crystalline quality of CuInS2 films.Atomic force microstructure images reveal that the grain size and surface roughness are related to the deposition sequence used.When the deposition sequence of precursor is In/Cu/In,the CuInS2 thin films show a single-phase chalcopyrite structure with (112) preferred orientation.The surface morphology of CIS films is uniform and compacted.The absorption coefficient is larger than 104 cm-1 with optical band gap Eg close to 1.4 eV.
