Simulating the total ionizing dose(TID)of an electrical system using transistor-level models can be difficult and expensive,particularly for digital-integrated circuits(ICs).In this study,a method for modeling TID eff...Simulating the total ionizing dose(TID)of an electrical system using transistor-level models can be difficult and expensive,particularly for digital-integrated circuits(ICs).In this study,a method for modeling TID effects in complementary metaloxide semiconductor(CMOS)digital ICs based on the input/output buffer information specification(IBIS)was proposed.The digital IC was first divided into three parts based on its internal structure:the input buffer,output buffer,and functional area.Each of these three parts was separately modeled.Using the IBIS model,the transistor V-I characteristic curves of the buffers were processed,and the physical parameters were extracted and modeled using VHDL-AMS.In the functional area,logic functions were modeled in VHDL according to the data sheet.A golden digital IC model was developed by combining the input buffer,output buffer,and functional area models.Furthermore,the golden ratio was reconstructed based on TID experimental data,enabling the assessment of TID effects on the threshold voltage,carrier mobility,and time series of the digital IC.TID experiments were conducted using a CMOS non-inverting multiplexer,NC7SZ157,and the results were compared with the simulation results,which showed that the relative errors were less than 2%at each dose point.This confirms the practicality and accuracy of the proposed modeling method.The TID effect model for digital ICs developed using this modeling technique includes both the logical function of the IC and changes in electrical properties and functional degradation impacted by TID,which has potential applications in the design of radiation-hardening tolerance in digital ICs.展开更多
By analysing problems in the traditional design theory of digital circuits it is proposed that both switching variable and signal variable should be adopted for describing the switching state of internal elements and ...By analysing problems in the traditional design theory of digital circuits it is proposed that both switching variable and signal variable should be adopted for describing the switching state of internal elements and signal in digital circuits respectively.Based on the above viewpoint the switch-signal theory is established.According to the working principle in CMOS circuits,the related design technique at switch level is developed.By using the practical design examples it is shown that the circuits designed at switch level have simpler structures than their counterparts designed at the traditional gate level since the switch transistors are used as construction units in designs.展开更多
基金This work was supported by the special fund of the State Key Laboratory of Intense Pulsed Radiation Simulation and Effect(No.SKLIPR2011).
文摘Simulating the total ionizing dose(TID)of an electrical system using transistor-level models can be difficult and expensive,particularly for digital-integrated circuits(ICs).In this study,a method for modeling TID effects in complementary metaloxide semiconductor(CMOS)digital ICs based on the input/output buffer information specification(IBIS)was proposed.The digital IC was first divided into three parts based on its internal structure:the input buffer,output buffer,and functional area.Each of these three parts was separately modeled.Using the IBIS model,the transistor V-I characteristic curves of the buffers were processed,and the physical parameters were extracted and modeled using VHDL-AMS.In the functional area,logic functions were modeled in VHDL according to the data sheet.A golden digital IC model was developed by combining the input buffer,output buffer,and functional area models.Furthermore,the golden ratio was reconstructed based on TID experimental data,enabling the assessment of TID effects on the threshold voltage,carrier mobility,and time series of the digital IC.TID experiments were conducted using a CMOS non-inverting multiplexer,NC7SZ157,and the results were compared with the simulation results,which showed that the relative errors were less than 2%at each dose point.This confirms the practicality and accuracy of the proposed modeling method.The TID effect model for digital ICs developed using this modeling technique includes both the logical function of the IC and changes in electrical properties and functional degradation impacted by TID,which has potential applications in the design of radiation-hardening tolerance in digital ICs.
基金Project supported by the National Natural Science Foundation of China.
文摘By analysing problems in the traditional design theory of digital circuits it is proposed that both switching variable and signal variable should be adopted for describing the switching state of internal elements and signal in digital circuits respectively.Based on the above viewpoint the switch-signal theory is established.According to the working principle in CMOS circuits,the related design technique at switch level is developed.By using the practical design examples it is shown that the circuits designed at switch level have simpler structures than their counterparts designed at the traditional gate level since the switch transistors are used as construction units in designs.
