The porous alumina have been prepared by anodization and an organic molecule 8-hydroxyquinoline aluminum (Alq3) has been impregnated in the pores. The morphology measured through atomic force microscopy shows that the...The porous alumina have been prepared by anodization and an organic molecule 8-hydroxyquinoline aluminum (Alq3) has been impregnated in the pores. The morphology measured through atomic force microscopy shows that the size of the pores is about 10 nm. A blue-shift photoluminescence of Alq3 in nanometer-sized hole is close to that of the monomers. The measured spectral characteristics demonstrate the limitation of the porous alumina to the emission of Alq3.展开更多
The optical properties of Silicon-doped InGaN and GaN grown on sapphire by MOCVD have been investigated by photoluminescence (PL) method. At room temperature, the band-gap peak of InGaN is 437.0 nm and its full width ...The optical properties of Silicon-doped InGaN and GaN grown on sapphire by MOCVD have been investigated by photoluminescence (PL) method. At room temperature, the band-gap peak of InGaN is 437.0 nm and its full width of half-maximum (FWHM) is about 14.3 nm. The band-gap peak and FWHM for GaN are 364.4 nm and 9.5 nm, respectively. By changing the temperature from 20 K to 293 K, it is found that the PL intensity of samples decreases but the FWHM broadens with the increasing of the temperature. GaN sample shows red-shift, InGaN sample shows red-blue-red-shift. The temperature dependence of peak energy shift is studied and explained.展开更多
基金This work was supported by the National Natural Science Foundation of China (Grant No. 60076002) and the Natural Science Foundation of Jiangsu Province (Grant No. BK99004).
文摘The porous alumina have been prepared by anodization and an organic molecule 8-hydroxyquinoline aluminum (Alq3) has been impregnated in the pores. The morphology measured through atomic force microscopy shows that the size of the pores is about 10 nm. A blue-shift photoluminescence of Alq3 in nanometer-sized hole is close to that of the monomers. The measured spectral characteristics demonstrate the limitation of the porous alumina to the emission of Alq3.
文摘The optical properties of Silicon-doped InGaN and GaN grown on sapphire by MOCVD have been investigated by photoluminescence (PL) method. At room temperature, the band-gap peak of InGaN is 437.0 nm and its full width of half-maximum (FWHM) is about 14.3 nm. The band-gap peak and FWHM for GaN are 364.4 nm and 9.5 nm, respectively. By changing the temperature from 20 K to 293 K, it is found that the PL intensity of samples decreases but the FWHM broadens with the increasing of the temperature. GaN sample shows red-shift, InGaN sample shows red-blue-red-shift. The temperature dependence of peak energy shift is studied and explained.
