结合Si基n^+-p-n-n^+外延平面双极晶体管,考虑了器件自热、高电场下的载流子迁移率退化和载流子雪崩产生效应,建立了其在高功率微波(high power microwave,HPM)作用下的二维电热模型.通过分析器件内部电场强度、电流密度和温度分布随信...结合Si基n^+-p-n-n^+外延平面双极晶体管,考虑了器件自热、高电场下的载流子迁移率退化和载流子雪崩产生效应,建立了其在高功率微波(high power microwave,HPM)作用下的二维电热模型.通过分析器件内部电场强度、电流密度和温度分布随信号作用时间的变化,研究了频率为1 GHz的等效电压信号由基极和集电极注入时双极晶体管的损伤效应和机理.结果表明集电极注入时器件升温发生在信号的负半周,在正半周时器件峰值温度略有下降,与集电极注入相比基极注入更容易使器件毁伤,其易损部位是B-E结.对初相分别为0和π的两个高幅值信号的损伤研究结果表明,初相为π的信号更容易损伤器件,而发射极串联电阻可以有效的提高器件的抗微波损伤能力.展开更多
We conduct a theoretical study of the damage susceptibility trend of a typical bipolar transistor induced by a high-power microwave （HPM） as a function of frequency. The dependences of the burnout time and the damag...We conduct a theoretical study of the damage susceptibility trend of a typical bipolar transistor induced by a high-power microwave （HPM） as a function of frequency. The dependences of the burnout time and the damage power on the signal frequency are obtained. Studies of the internal damage process and the mechanism of the device are carried out from the variation analysis of the distribution of the electric field, current density, and temperature. The investigation shows that the burnout time linearly depends on the signal frequency. The current density and the electric field at the damage position decrease with increasing frequency. Meanwhile, the temperature elevation occurs in the area between the p-n junction and the n n＋ interface due to the increase of the electric field. Adopting the data analysis software, the relationship between the damage power and frequency is obtained. Moreover, the thickness of the substrate has a significant effect on the burnout time.展开更多
A study on the influence of the external resistor and the external voltage source during the injection of the electromagnetic pulse（EMP） into the bipolar transistor（BJT） is carried out.Research shows that the incr...A study on the influence of the external resistor and the external voltage source during the injection of the electromagnetic pulse（EMP） into the bipolar transistor（BJT） is carried out.Research shows that the increase of the external resistor R_b at base makes the burnout time of the device decrease slightly,the increase of the external voltage source V_（be） at base can aid the damage of the device when the magnitude of the injecting voltage is relatively low and has little influence when the magnitude is sufficiently high causing the device appearing the PIN structure damage,and the increase of the external resistor R_e can remarkably reduce the voltage drops added to the device and improve the durability of the device.In the final analysis,the effect of the external circuit component on the BJT damage is the influence on the condition which makes the device appear current-mode second breakdown.展开更多
文摘结合Si基n^+-p-n-n^+外延平面双极晶体管,考虑了器件自热、高电场下的载流子迁移率退化和载流子雪崩产生效应,建立了其在高功率微波(high power microwave,HPM)作用下的二维电热模型.通过分析器件内部电场强度、电流密度和温度分布随信号作用时间的变化,研究了频率为1 GHz的等效电压信号由基极和集电极注入时双极晶体管的损伤效应和机理.结果表明集电极注入时器件升温发生在信号的负半周,在正半周时器件峰值温度略有下降,与集电极注入相比基极注入更容易使器件毁伤,其易损部位是B-E结.对初相分别为0和π的两个高幅值信号的损伤研究结果表明,初相为π的信号更容易损伤器件,而发射极串联电阻可以有效的提高器件的抗微波损伤能力.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60776034)
文摘We conduct a theoretical study of the damage susceptibility trend of a typical bipolar transistor induced by a high-power microwave （HPM） as a function of frequency. The dependences of the burnout time and the damage power on the signal frequency are obtained. Studies of the internal damage process and the mechanism of the device are carried out from the variation analysis of the distribution of the electric field, current density, and temperature. The investigation shows that the burnout time linearly depends on the signal frequency. The current density and the electric field at the damage position decrease with increasing frequency. Meanwhile, the temperature elevation occurs in the area between the p-n junction and the n n＋ interface due to the increase of the electric field. Adopting the data analysis software, the relationship between the damage power and frequency is obtained. Moreover, the thickness of the substrate has a significant effect on the burnout time.
基金Project supported by the National Natural Science Foundation of China(No.60776034).
文摘A study on the influence of the external resistor and the external voltage source during the injection of the electromagnetic pulse（EMP） into the bipolar transistor（BJT） is carried out.Research shows that the increase of the external resistor R_b at base makes the burnout time of the device decrease slightly,the increase of the external voltage source V_（be） at base can aid the damage of the device when the magnitude of the injecting voltage is relatively low and has little influence when the magnitude is sufficiently high causing the device appearing the PIN structure damage,and the increase of the external resistor R_e can remarkably reduce the voltage drops added to the device and improve the durability of the device.In the final analysis,the effect of the external circuit component on the BJT damage is the influence on the condition which makes the device appear current-mode second breakdown.
