Heavy doping of the base in HBTs brings about a bandgap narrowing （BGN） effect, which modifies the intrinsic carrier density and disturbs the band offset, and thus leads to the change of the currents. Based on a the...Heavy doping of the base in HBTs brings about a bandgap narrowing （BGN） effect, which modifies the intrinsic carrier density and disturbs the band offset, and thus leads to the change of the currents. Based on a thermionic-field-diffusion model that is used to the analyze the performance of an abrupt HBT with a heavydoped base, the conclusion is made that, although the BGN effect makes the currents obviously change due to the modification of the intrinsic carrier density, the band offsets disturbed by the BGN effect should also be taken into account in the analysis of the electrical characteristics of abrupt HBTs. In addition, the BGN effect changes the bias voltage for the onset of Kirk effects.展开更多
A new layered Cu-based oxychalcogenide Ba_3Fe_2O_5Cu_2S_2 has been synthesized and its magnetic and electronic properties were revealed. Ba_3Fe_2O_5Cu_2S_2 is built up by alternatively stacking [Cu_2S_2]^（2-） layers...A new layered Cu-based oxychalcogenide Ba_3Fe_2O_5Cu_2S_2 has been synthesized and its magnetic and electronic properties were revealed. Ba_3Fe_2O_5Cu_2S_2 is built up by alternatively stacking [Cu_2S_2]^（2-） layers and iron perovskite oxide[（FeO_2）（BaO）（FeO_2）]^（2-）layers along the c axis that are separated by barium ions with Fe^（3＋） fivefold coordinated by a square-pyramidal arrangement of oxygen. From the bond valence arguments, we inferred that in layered CuC h-based（Ch =S, Se, Te） compounds the ＋3 cation in perovskite oxide sheet prefers a square pyramidal site, while the lower valence cation prefers the square planar sites. The studies on susceptibility, transport, and optical reflectivity indicate that Ba_3Fe_2O_5Cu_2S_2 is an antiferromagnetic semiconductor with a Ne′el temperature of 121 K and an optical bandgap of 1.03 eV. The measurement of heat capacity from 10 K to room temperature shows no anomaly at 121 K. The Debye temperature is determined to be 113 K. Theoretical calculations indicate that the conduction band minimum is predominantly contributed by O 2p and 3 d states of Fe ions that antiferromagnetically arranged in FeO_2 layers. The Fe 3d states are located at lower energy and result in a narrow bandgap in comparison with that of the isostructural Sr_3Sc_2O_5Cu_2S_2.展开更多
Titanium dioxide(Ti O_2) is widely employed as a solid photocatalyst for solar energy conversion and environmental remediation. The ability to construct porous Ti O_2 with controlled particle size and narrowed bandgap...Titanium dioxide(Ti O_2) is widely employed as a solid photocatalyst for solar energy conversion and environmental remediation. The ability to construct porous Ti O_2 with controlled particle size and narrowed bandgap is an essential requirement for the design of highly efficient and recyclable photocatalysts. Here, we report a templatefree acetic acid induced method for the synthesis of visiblelight responsive carbon-doped Ti O_2 microplates with high crystallinity and mesoporous structure. It is shown that the electron-withdrawing bidentate carboxylate ligands derived from acetic acid can narrow the bandgap of Ti O_2(1.84 e V)substantially. Moreover, the resultant microplate photocatalysts exhibit excellent photocatalytic efficiency and solid–liquid separation performance, which will be beneficial for future industrial applications.展开更多
A large signal model for InP/InGaAs double heterojunction bipolar transistors including thermal effects has been reported,which demonstrated good agreements of simulations with measurements.On the basis of the previou...A large signal model for InP/InGaAs double heterojunction bipolar transistors including thermal effects has been reported,which demonstrated good agreements of simulations with measurements.On the basis of the previous model in which the double heterojunction effect,current blocking effect and high current effect in current expression are considered,the effect of bandgap narrowing with temperature has been considered in transport current while a formula for model parameters as a function of temperature has been developed.This model is implemented by Verilog-A and embedded in ADS.The proposed model is verified with DC and large signal measurements.展开更多
基金supported by the State Key Development Program for Basic Research of China (No. 2003CB314901)
文摘Heavy doping of the base in HBTs brings about a bandgap narrowing （BGN） effect, which modifies the intrinsic carrier density and disturbs the band offset, and thus leads to the change of the currents. Based on a thermionic-field-diffusion model that is used to the analyze the performance of an abrupt HBT with a heavydoped base, the conclusion is made that, although the BGN effect makes the currents obviously change due to the modification of the intrinsic carrier density, the band offsets disturbed by the BGN effect should also be taken into account in the analysis of the electrical characteristics of abrupt HBTs. In addition, the BGN effect changes the bias voltage for the onset of Kirk effects.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51472266,51202286,and 91422303)the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant No.XDB07020100)the ICDD
文摘A new layered Cu-based oxychalcogenide Ba_3Fe_2O_5Cu_2S_2 has been synthesized and its magnetic and electronic properties were revealed. Ba_3Fe_2O_5Cu_2S_2 is built up by alternatively stacking [Cu_2S_2]^（2-） layers and iron perovskite oxide[（FeO_2）（BaO）（FeO_2）]^（2-）layers along the c axis that are separated by barium ions with Fe^（3＋） fivefold coordinated by a square-pyramidal arrangement of oxygen. From the bond valence arguments, we inferred that in layered CuC h-based（Ch =S, Se, Te） compounds the ＋3 cation in perovskite oxide sheet prefers a square pyramidal site, while the lower valence cation prefers the square planar sites. The studies on susceptibility, transport, and optical reflectivity indicate that Ba_3Fe_2O_5Cu_2S_2 is an antiferromagnetic semiconductor with a Ne′el temperature of 121 K and an optical bandgap of 1.03 eV. The measurement of heat capacity from 10 K to room temperature shows no anomaly at 121 K. The Debye temperature is determined to be 113 K. Theoretical calculations indicate that the conduction band minimum is predominantly contributed by O 2p and 3 d states of Fe ions that antiferromagnetically arranged in FeO_2 layers. The Fe 3d states are located at lower energy and result in a narrow bandgap in comparison with that of the isostructural Sr_3Sc_2O_5Cu_2S_2.
基金supported by the National Natural Science Foundation of China(20966006)the Natural Science Foundation of the Inner Mongolia Autonomous Region(2014MS0218)the Program for Innovative Research Team in Universities of Inner Mongolia Autonomous Region(NMGIRT-A1603)
文摘Titanium dioxide(Ti O_2) is widely employed as a solid photocatalyst for solar energy conversion and environmental remediation. The ability to construct porous Ti O_2 with controlled particle size and narrowed bandgap is an essential requirement for the design of highly efficient and recyclable photocatalysts. Here, we report a templatefree acetic acid induced method for the synthesis of visiblelight responsive carbon-doped Ti O_2 microplates with high crystallinity and mesoporous structure. It is shown that the electron-withdrawing bidentate carboxylate ligands derived from acetic acid can narrow the bandgap of Ti O_2(1.84 e V)substantially. Moreover, the resultant microplate photocatalysts exhibit excellent photocatalytic efficiency and solid–liquid separation performance, which will be beneficial for future industrial applications.
基金supported by the State Key Development Program tor Basic Research of China(No.2010CB327504)
文摘A large signal model for InP/InGaAs double heterojunction bipolar transistors including thermal effects has been reported,which demonstrated good agreements of simulations with measurements.On the basis of the previous model in which the double heterojunction effect,current blocking effect and high current effect in current expression are considered,the effect of bandgap narrowing with temperature has been considered in transport current while a formula for model parameters as a function of temperature has been developed.This model is implemented by Verilog-A and embedded in ADS.The proposed model is verified with DC and large signal measurements.
