The water Cherenkov detector array(WCDA) is an important part of the large high-altitude air shower observatory(LHAASO),which is in a research and development phase.The central scientific goal of LHAASO is to explore ...The water Cherenkov detector array(WCDA) is an important part of the large high-altitude air shower observatory(LHAASO),which is in a research and development phase.The central scientific goal of LHAASO is to explore the origin of high-energy cosmic rays of the universe and to push forward the frontier of new physics.To simplify the WCDA's readout electronics,a prototype of a front-end readout for an application-specific integrated circuit(ASIC) is designed based on the timeover-threshold method to achieve charge-to-time conversion.High-precision time measurement and charge measurement are necessary over a full dynamic range[1-4000photoelectrons(P.E.)].To evaluate the performance of this ASIC,a test system is designed that includes the front-end ASIC test module,digitization module,and test software.The first module needs to be customized for different ASIC versions,whereas the digitization module and test software are tested for general-purpose use.In the digitization module,a field programmable gate array-based time-todigital converter is designed with a bin size of 333 ps,which also integrates an inter-integrated circuit to configure the ASIC test module,and a universal serial bus interface is designed to transfer data to the remote computer.Test results indicate that the time resolution is better than 0.5 ns,and the charge resolution is better than 30%root mean square(RMS) at 1 P.E.and 3%RMS at 4000 P.E.,which are beyond the application requirements.展开更多
针对高能物理实验中飞行时间探测器的时间测量高精度需求,基于0.13μmm互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)工艺设计了一种可应用在时间内插法中作为细计数模块的单周期时间数字转换器(Time to Digital...针对高能物理实验中飞行时间探测器的时间测量高精度需求,基于0.13μmm互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)工艺设计了一种可应用在时间内插法中作为细计数模块的单周期时间数字转换器(Time to Digital Convertor,TDC),并为测试设计了一个闭环测试系统。通过实测数据分析,在相同的条件下设计对比试验,寻找TDC刻度非均匀性的来源,并给出相应的校准方法。测试结果表明:校准后TDC的分辨率达到57 ps,精度好于40 ps,达到了预期的设计目标。展开更多
Glaucoma is a neurodegenerative condition that is the leading cause of irreversible blindness worldwide. Elevated intraocular pressure (IOP) is the main risk factor for the development and progression of the disease. ...Glaucoma is a neurodegenerative condition that is the leading cause of irreversible blindness worldwide. Elevated intraocular pressure (IOP) is the main risk factor for the development and progression of the disease. Methods to lower IOP remain the first line treatments for the condition. Current methods of IOP measurement do not permit temporary noninvasive monitoring 24-hour IOP on a periodic basis. Ongoing research will in time provide a means of developing a device that will enable continuous or temporary monitoring of IOP. At present a device suitable for clinical use is not yet available.This review contains a description of different devices currently in development for measuring IOP: soft contact lens, LC resonant circuits and on-chip sensing devices. All of them use application-specific integrated circuits (ASICS) to process the measured signals and send them to recording devices. Soft contact lens devices are based on an embedded strain gauge, LC circuits vary their resonance frequency depending on the intraocular pressure (IOP) and, finally, on-chip sensing devices include an integrated microelectromechanical sensor (MEMS). MEMS are capacitors whose capacity varies with IOP. These devices allow for an accurate IOP measurement (up to +/– 0.2 mm Hg) with high sampling rates (up to 1 sample/min) and storing 1 week of raw data. All of them operate in an autonomous way and even some of them are energetically independent.展开更多
介绍了一种超低功耗、无片上电阻、无双极型晶体管（BJT）的基于亚阈值CMOS特性的基准电压源,该带隙基准源主要用于低功耗型专用集成电路（ASIC）。采用Oguey电流源结构来减小静态电流,以降低功耗。通过使用工作在线性区的MOS管代替传...介绍了一种超低功耗、无片上电阻、无双极型晶体管（BJT）的基于亚阈值CMOS特性的基准电压源,该带隙基准源主要用于低功耗型专用集成电路（ASIC）。采用Oguey电流源结构来减小静态电流,以降低功耗。通过使用工作在线性区的MOS管代替传统结构中的电阻消除迁移率和电流的温度影响,同时减小芯片面积;采用共源共栅电流镜以降低电源电压抑制比和电压调整率。电路基于SMIC 0.18μm CMOS工艺进行仿真。仿真结果表明,在-45~130℃内,温漂系数为29.1×10-6/℃,电源电压范围为0.8~3.3 V时,电压调整率为0.056%,在100 Hz时,电源电压抑制比为-53 d B。电路功耗仅为235 n W,芯片面积为0.01 mm2。展开更多
为了提高通信系统的保密性,降低制造成本,需要进行专用处理器的设计。该文基于SELP(Sinusoidal Excitation Linear Prediction)算法模型原理,设计了一款高质量多速率语音专用处理器芯片。芯片使用可重构体系结构和超长指令字系统设计方...为了提高通信系统的保密性,降低制造成本,需要进行专用处理器的设计。该文基于SELP(Sinusoidal Excitation Linear Prediction)算法模型原理,设计了一款高质量多速率语音专用处理器芯片。芯片使用可重构体系结构和超长指令字系统设计方法,将复杂度高的子程序进行优化,能够显著提高指令并行度。仿真结果表明:在该芯片上实现语音压缩编码算法,执行效率高于相同工艺水平的通用数字信号处理器,并保持原有编码质量。该处理器能够实现多种类型的语音压缩算法,使语音算法可以达到高保密性、低复杂度和易开发性。展开更多
基金supported by the Knowledge Innovation Program of the Chinese Academy of Sciences(KJCX2-YW-N27)the CAS Center for Excellence in Particle Physics(CCEPP)
文摘The water Cherenkov detector array(WCDA) is an important part of the large high-altitude air shower observatory(LHAASO),which is in a research and development phase.The central scientific goal of LHAASO is to explore the origin of high-energy cosmic rays of the universe and to push forward the frontier of new physics.To simplify the WCDA's readout electronics,a prototype of a front-end readout for an application-specific integrated circuit(ASIC) is designed based on the timeover-threshold method to achieve charge-to-time conversion.High-precision time measurement and charge measurement are necessary over a full dynamic range[1-4000photoelectrons(P.E.)].To evaluate the performance of this ASIC,a test system is designed that includes the front-end ASIC test module,digitization module,and test software.The first module needs to be customized for different ASIC versions,whereas the digitization module and test software are tested for general-purpose use.In the digitization module,a field programmable gate array-based time-todigital converter is designed with a bin size of 333 ps,which also integrates an inter-integrated circuit to configure the ASIC test module,and a universal serial bus interface is designed to transfer data to the remote computer.Test results indicate that the time resolution is better than 0.5 ns,and the charge resolution is better than 30%root mean square(RMS) at 1 P.E.and 3%RMS at 4000 P.E.,which are beyond the application requirements.
文摘针对高能物理实验中飞行时间探测器的时间测量高精度需求,基于0.13μmm互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)工艺设计了一种可应用在时间内插法中作为细计数模块的单周期时间数字转换器(Time to Digital Convertor,TDC),并为测试设计了一个闭环测试系统。通过实测数据分析,在相同的条件下设计对比试验,寻找TDC刻度非均匀性的来源,并给出相应的校准方法。测试结果表明:校准后TDC的分辨率达到57 ps,精度好于40 ps,达到了预期的设计目标。
文摘Glaucoma is a neurodegenerative condition that is the leading cause of irreversible blindness worldwide. Elevated intraocular pressure (IOP) is the main risk factor for the development and progression of the disease. Methods to lower IOP remain the first line treatments for the condition. Current methods of IOP measurement do not permit temporary noninvasive monitoring 24-hour IOP on a periodic basis. Ongoing research will in time provide a means of developing a device that will enable continuous or temporary monitoring of IOP. At present a device suitable for clinical use is not yet available.This review contains a description of different devices currently in development for measuring IOP: soft contact lens, LC resonant circuits and on-chip sensing devices. All of them use application-specific integrated circuits (ASICS) to process the measured signals and send them to recording devices. Soft contact lens devices are based on an embedded strain gauge, LC circuits vary their resonance frequency depending on the intraocular pressure (IOP) and, finally, on-chip sensing devices include an integrated microelectromechanical sensor (MEMS). MEMS are capacitors whose capacity varies with IOP. These devices allow for an accurate IOP measurement (up to +/– 0.2 mm Hg) with high sampling rates (up to 1 sample/min) and storing 1 week of raw data. All of them operate in an autonomous way and even some of them are energetically independent.
文摘介绍了一种超低功耗、无片上电阻、无双极型晶体管（BJT）的基于亚阈值CMOS特性的基准电压源,该带隙基准源主要用于低功耗型专用集成电路（ASIC）。采用Oguey电流源结构来减小静态电流,以降低功耗。通过使用工作在线性区的MOS管代替传统结构中的电阻消除迁移率和电流的温度影响,同时减小芯片面积;采用共源共栅电流镜以降低电源电压抑制比和电压调整率。电路基于SMIC 0.18μm CMOS工艺进行仿真。仿真结果表明,在-45~130℃内,温漂系数为29.1×10-6/℃,电源电压范围为0.8~3.3 V时,电压调整率为0.056%,在100 Hz时,电源电压抑制比为-53 d B。电路功耗仅为235 n W,芯片面积为0.01 mm2。
文摘为了提高通信系统的保密性,降低制造成本,需要进行专用处理器的设计。该文基于SELP(Sinusoidal Excitation Linear Prediction)算法模型原理,设计了一款高质量多速率语音专用处理器芯片。芯片使用可重构体系结构和超长指令字系统设计方法,将复杂度高的子程序进行优化,能够显著提高指令并行度。仿真结果表明:在该芯片上实现语音压缩编码算法,执行效率高于相同工艺水平的通用数字信号处理器,并保持原有编码质量。该处理器能够实现多种类型的语音压缩算法,使语音算法可以达到高保密性、低复杂度和易开发性。
