Well-aligned carbon nanotubes coated with titania (TiO2) were prepared by atmospheric pressure chemical vapor deposition (APCVD),and the sequential experiments including carbon nano- tubes preparation,air-oxidation pu...Well-aligned carbon nanotubes coated with titania (TiO2) were prepared by atmospheric pressure chemical vapor deposition (APCVD),and the sequential experiments including carbon nano- tubes preparation,air-oxidation purification and tita- nia nanoparticles coating were performed at different temperatures in the same reactor. Scanning electron microscopy (SEM),transmission electron microscope (TEM),X-ray diffraction patterns (XRD),and energy- dispersive X-ray spectra (EDX) demonstrated the well-aligned nanotubes and TiO2 nanoparticles in close proximity and the average diameter of TiO2 nanoparticles was 11.5 nm.展开更多
To alleviate catalytic coking on the inner surface of radiant tube for ethylene production in petrochemical plants,SiO2/S coatings were deposited on HP40 alloy specimens using dimethyldisulfide （DMDS） and tetraethox...To alleviate catalytic coking on the inner surface of radiant tube for ethylene production in petrochemical plants,SiO2/S coatings were deposited on HP40 alloy specimens using dimethyldisulfide （DMDS） and tetraethoxysilane （TEOS） by atmospheric pressure chemical vapor deposition （APCVD）. A two-dimension mathematical model was made to predict the growth rate of SiO2/S coating and to study the effects of deposition parameters on the deposition rate. The results show that the predicted deposition rate is in good agreement with the experimental one. The deposition rate mainly depends on the concentrations of precursors in the total gas flow, concentrations of intermediates on the deposition surface, total gas flow rate and deposition temperature. The weight of SiO2/S coating linearly increases with the deposition time. When the gas flow rate is below 0.3 m/s, the rate-limiting step of SiO2/S coating deposition is the diffusions of intermediates.However, the surface reactions of intermediates will be the rate-limiting step after the gas flow rate is above 0.3 m/s. When the deposition temperature is below 780℃, the rate-limiting step of SiO2/S coating deposition mainly depends on the surface reactions of intermediates. When the deposition temperature is above 780℃,the rate-limiting step depends on the diffusions of intermediates. The deposition rate increases with increasing the concentrations of the intermediates. However, when the partial pressures of the intermediates reach 8 Pa,the deposition rate keeps constant.展开更多
基金This work was supported by the Hi-Tech Research and Development Program of China(Grant No.2004AA649290)the National Natural Science Foundation of China for Distinguished Young Scholars(Grant No.20525723).
文摘Well-aligned carbon nanotubes coated with titania (TiO2) were prepared by atmospheric pressure chemical vapor deposition (APCVD),and the sequential experiments including carbon nano- tubes preparation,air-oxidation purification and tita- nia nanoparticles coating were performed at different temperatures in the same reactor. Scanning electron microscopy (SEM),transmission electron microscope (TEM),X-ray diffraction patterns (XRD),and energy- dispersive X-ray spectra (EDX) demonstrated the well-aligned nanotubes and TiO2 nanoparticles in close proximity and the average diameter of TiO2 nanoparticles was 11.5 nm.
文摘To alleviate catalytic coking on the inner surface of radiant tube for ethylene production in petrochemical plants,SiO2/S coatings were deposited on HP40 alloy specimens using dimethyldisulfide （DMDS） and tetraethoxysilane （TEOS） by atmospheric pressure chemical vapor deposition （APCVD）. A two-dimension mathematical model was made to predict the growth rate of SiO2/S coating and to study the effects of deposition parameters on the deposition rate. The results show that the predicted deposition rate is in good agreement with the experimental one. The deposition rate mainly depends on the concentrations of precursors in the total gas flow, concentrations of intermediates on the deposition surface, total gas flow rate and deposition temperature. The weight of SiO2/S coating linearly increases with the deposition time. When the gas flow rate is below 0.3 m/s, the rate-limiting step of SiO2/S coating deposition is the diffusions of intermediates.However, the surface reactions of intermediates will be the rate-limiting step after the gas flow rate is above 0.3 m/s. When the deposition temperature is below 780℃, the rate-limiting step of SiO2/S coating deposition mainly depends on the surface reactions of intermediates. When the deposition temperature is above 780℃,the rate-limiting step depends on the diffusions of intermediates. The deposition rate increases with increasing the concentrations of the intermediates. However, when the partial pressures of the intermediates reach 8 Pa,the deposition rate keeps constant.
