We put forward an n-ZnO/p-Si heterojunction solar cell model based on AFORS-HET simulations and provide experimental support in this article.ZnO：B（B-doped ZnO） thin films deposited by metal-organic chemical vapor d...We put forward an n-ZnO/p-Si heterojunction solar cell model based on AFORS-HET simulations and provide experimental support in this article.ZnO：B（B-doped ZnO） thin films deposited by metal-organic chemical vapor deposition（MOCVD） are planned to act as electrical emitter layer on p-type c-Si substrate for photovoltaic applications.We investigate the effects of thickness,buffer layer,ZnO：B affinity and work function of electrodes on performances of solar cells through computer simulations using AFORS-HET software package.The energy conversion efficiency of the ZnO：B（n）/ZnO/c-Si（p） solar cell can achieve 17.16%（V（oc）：675.8 mV,J（sc）：30.24 mA/cm^2,FF：83.96%） via simulation.On a basis of optimized conditions in simulation,we carry out some experiments,which testify that the ZnO buffer layer of 20 nm contributes to improving performances of solar cells.The influences of growth temperature,thickness and diborane（B2H6） flow rates are also discussed.We achieve an appropriate condition for the fabrication of the solar cells using the MOCVD technique.The obtained conversion efficiency reaches2.82%（V（oc）：294.4 mV,J（sc）：26.108 mA/cm^2,FF：36.66%）.展开更多
为分析CZTSSe薄膜太阳能电池的背电极接触特性,采用AFORS-HET(Automat for Simulation of HETerostructures)v2.5软件对CZTSSe/Mo(S,Se)2/Mo结构进行数值分析,研究CZTSSe的带隙和电子亲和能、Mo(S,Se)2界面层的厚度以及带隙对CZTSSe与M...为分析CZTSSe薄膜太阳能电池的背电极接触特性,采用AFORS-HET(Automat for Simulation of HETerostructures)v2.5软件对CZTSSe/Mo(S,Se)2/Mo结构进行数值分析,研究CZTSSe的带隙和电子亲和能、Mo(S,Se)2界面层的厚度以及带隙对CZTSSe与Mo电极的电学接触特性的影响。结果表明CZTSSe的带隙和电子亲和能的增大,使得CZTSSe/Mo(S,Se)2/Mo的欧姆接触减弱并向整流接触转变;对于带隙较窄的CZTSSe,加入界面层使CZTSSe/Mo(S,Se)2/Mo形成的欧姆接触转变为整流接触,随着界面层厚度的增大,整流接触逐渐减弱;对于带隙较宽的CZTSSe,加入2 nm的界面层使得CZTSSe/Mo(S,Se)2/Mo形成的整流接触增强,但随着界面层厚度的继续增大,整流接触减弱。当CZTSSe的带隙和电子亲和能较小时,CZTSSe/Mo(S,Se)2/Mo形成欧姆接触,控制界面层厚度为100 nm左右可以得到最优的电学接触特性。展开更多
基金Project supported by the State Key Development Program for Basic Research of China(Nos.2011CBA00706,2011CBA00707)the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan(No.13JCZDJC26900)+2 种基金the Tianjin Major Science and Technology Support Project(No.11TXSYGX22100)the National High Technology Research and Development Program of China(No.2013AA050302)the Fundamental Research Funds for the Central Universities(No.65010341)
文摘We put forward an n-ZnO/p-Si heterojunction solar cell model based on AFORS-HET simulations and provide experimental support in this article.ZnO：B（B-doped ZnO） thin films deposited by metal-organic chemical vapor deposition（MOCVD） are planned to act as electrical emitter layer on p-type c-Si substrate for photovoltaic applications.We investigate the effects of thickness,buffer layer,ZnO：B affinity and work function of electrodes on performances of solar cells through computer simulations using AFORS-HET software package.The energy conversion efficiency of the ZnO：B（n）/ZnO/c-Si（p） solar cell can achieve 17.16%（V（oc）：675.8 mV,J（sc）：30.24 mA/cm^2,FF：83.96%） via simulation.On a basis of optimized conditions in simulation,we carry out some experiments,which testify that the ZnO buffer layer of 20 nm contributes to improving performances of solar cells.The influences of growth temperature,thickness and diborane（B2H6） flow rates are also discussed.We achieve an appropriate condition for the fabrication of the solar cells using the MOCVD technique.The obtained conversion efficiency reaches2.82%（V（oc）：294.4 mV,J（sc）：26.108 mA/cm^2,FF：36.66%）.
文摘为分析CZTSSe薄膜太阳能电池的背电极接触特性,采用AFORS-HET(Automat for Simulation of HETerostructures)v2.5软件对CZTSSe/Mo(S,Se)2/Mo结构进行数值分析,研究CZTSSe的带隙和电子亲和能、Mo(S,Se)2界面层的厚度以及带隙对CZTSSe与Mo电极的电学接触特性的影响。结果表明CZTSSe的带隙和电子亲和能的增大,使得CZTSSe/Mo(S,Se)2/Mo的欧姆接触减弱并向整流接触转变;对于带隙较窄的CZTSSe,加入界面层使CZTSSe/Mo(S,Se)2/Mo形成的欧姆接触转变为整流接触,随着界面层厚度的增大,整流接触逐渐减弱;对于带隙较宽的CZTSSe,加入2 nm的界面层使得CZTSSe/Mo(S,Se)2/Mo形成的整流接触增强,但随着界面层厚度的继续增大,整流接触减弱。当CZTSSe的带隙和电子亲和能较小时,CZTSSe/Mo(S,Se)2/Mo形成欧姆接触,控制界面层厚度为100 nm左右可以得到最优的电学接触特性。
