使用p-Al Ga N/p-Ga N SPSLs作为LED的p型层,在蓝宝石衬底上生长出发光波长为350 nm的Al Ga N基紫外LED。由于Al Ga N/Ga N超晶格的极化效应,使得Mg受主的电离能降低,大幅提高了器件的光学和电学性能。在工作电流为350 m A下发光亮度达...使用p-Al Ga N/p-Ga N SPSLs作为LED的p型层,在蓝宝石衬底上生长出发光波长为350 nm的Al Ga N基紫外LED。由于Al Ga N/Ga N超晶格的极化效应,使得Mg受主的电离能降低,大幅提高了器件的光学和电学性能。在工作电流为350 m A下发光亮度达到了22.66 m W,相应的工作电压为3.75 V,LEDs的光功率满足了实际应用需求。展开更多
P-A1GaN/P-GaN superlattices are investigated in blue InGaN light-emitting diodes as electron blocking layers. The simulation results show that efficiency droop is markedly improved due to two reasons： （i） enhanced ...P-A1GaN/P-GaN superlattices are investigated in blue InGaN light-emitting diodes as electron blocking layers. The simulation results show that efficiency droop is markedly improved due to two reasons： （i） enhanced hole concentration and hole carrier transport efficiency in A1GaN/GaN superlattices, and （ii） enhanced blocking of electron overflow between multiple quantum-wells and A1CaN/GaN superlattices.展开更多
文摘使用p-Al Ga N/p-Ga N SPSLs作为LED的p型层,在蓝宝石衬底上生长出发光波长为350 nm的Al Ga N基紫外LED。由于Al Ga N/Ga N超晶格的极化效应,使得Mg受主的电离能降低,大幅提高了器件的光学和电学性能。在工作电流为350 m A下发光亮度达到了22.66 m W,相应的工作电压为3.75 V,LEDs的光功率满足了实际应用需求。
基金Project supported by the Project of Combination of Production and Research Guided by Education Ministry of China in 2009(Grant No. 2009B090300338)the LED Industrial Projects of Special Funds Strategic Emerging Industries in 2011,Guangdong Province,China (Grant No. 2010A081002005)
文摘P-A1GaN/P-GaN superlattices are investigated in blue InGaN light-emitting diodes as electron blocking layers. The simulation results show that efficiency droop is markedly improved due to two reasons： （i） enhanced hole concentration and hole carrier transport efficiency in A1GaN/GaN superlattices, and （ii） enhanced blocking of electron overflow between multiple quantum-wells and A1CaN/GaN superlattices.
