本文分析了在不同衬底上生长无极性GaN薄膜的情况,这些衬底主要包括-γL iA lO2、r面蓝宝石等。通常在蓝宝石上制备的GaN外延膜是沿c轴生长的,而c轴是GaN的极性轴,导致GaN基器件有源层量子阱中出现很强的内建电场,发光效率会因此降低,...本文分析了在不同衬底上生长无极性GaN薄膜的情况,这些衬底主要包括-γL iA lO2、r面蓝宝石等。通常在蓝宝石上制备的GaN外延膜是沿c轴生长的,而c轴是GaN的极性轴,导致GaN基器件有源层量子阱中出现很强的内建电场,发光效率会因此降低,发展非极性面外延,有望克服这一物理现象,使发光效率提高。展开更多
γ-LiAlO2 single crystal is a promising substrate for GaN heteroepitaxy. In this paper, we present the growth of large-sized LiAlO2 crystal by modified Czochralski method. The crystal quality was characterized by high...γ-LiAlO2 single crystal is a promising substrate for GaN heteroepitaxy. In this paper, we present the growth of large-sized LiAlO2 crystal by modified Czochralski method. The crystal quality was characterized by high-resolution X-ray diffraction and chemical etching. The results show that the as-grown crystal has perfect quality with the full width at half maximum （FWHM） of 17.7-22.6 arcsec and etch pits density of （0.3- 2.2）×10^4 cm^-2 throughout the crystal boule. The bottom of the crystal boule shows the best quality. The optical transmission spectra from UV to IR exhibits that the crystal is transparent from 0.2 to 5.5μm and becomes completely absorbing around 6.7μm wavelength, The optical absorption edge in near UV region is about 191 nm.展开更多
γ-LiAlO2：Eu3＋（Eu3＋：LAO） phosphor was obtained by gel combustion method using LiNO3,Al（NO3）3·9H2O,Eu（NO3）3·6H2O and citric acid as raw materials.The structure,morphology and luminescence were chara...γ-LiAlO2：Eu3＋（Eu3＋：LAO） phosphor was obtained by gel combustion method using LiNO3,Al（NO3）3·9H2O,Eu（NO3）3·6H2O and citric acid as raw materials.The structure,morphology and luminescence were characterized by means of X-ray diffraction （XRD）,scanning electron microscopy （SEM）,photoluminescence （PL）.The results demonstrated that the phosphor was pure-phase of flaky tetragonal crystal system with a mean size of around 1 μm.The strongest excitation peak was at 254 nm,belonging to the broadband excitation and the maximum emission peak was at 613 nm,corresponding to the 5D0→7F2 transition of Eu3＋.Luminous intensity is closely related to the calcination temperature and doping concentration of Eu3＋.展开更多
Transparent γ-LiAlO2 single crystal has been grown by Temperature Gradient technique. The surface of the wafer annealed in O2-atmosphere at 1100°C for 70 h became opaque and Li-poor phase (LiAl5O8); while, that ...Transparent γ-LiAlO2 single crystal has been grown by Temperature Gradient technique. The surface of the wafer annealed in O2-atmosphere at 1100°C for 70 h became opaque and Li-poor phase (LiAl5O8); while, that annealed in Li-rich atmosphere kept transparent and smooth. The full-width at half maximum value dropped to 30 arcsecs when the wafer was annealed in Li-rich atmosphere. That annealed in O2-atmosphere increased to 78 arcsec. Compared with absorption spectra, we can conclude that the 196 nm absorption peak was caused by Li vacancies and the 736 nm peak was caused by O vacancies.展开更多
Using vapor transport equilibration (VTE) technique we succeeded in the fabrication of single-phase γ-LiAlO2 layer on (0001) sapphire substrate. X-ray diffraction indicated that the as-fabricated layer was highly tex...Using vapor transport equilibration (VTE) technique we succeeded in the fabrication of single-phase γ-LiAlO2 layer on (0001) sapphire substrate. X-ray diffraction indicated that the as-fabricated layer was highly textured with [100] orientation at proper VTE treatment temperature range from 1050°C to 1100°C. The main factors affecting the quality of the γ-LiAlO2 layer were investigated by SEM and transmission spectra. These results reveal the possibility of fabricating γ-LiAlO2 (100)// sapphire (0001) composite substrate for GaN-based epitaxial film by VTE.展开更多
采用气相传输平衡(VTE)技术,在(0001)面白宝石衬底表面上成功地制备出单相-γL iA lO2层。研究了白宝石衬底表面形貌对-γL iA lO2层质量的影响,发现白宝石衬底的表面粗糙度和退火处理是两个影响-γL iA lO2层质量的重要因素。要制备高...采用气相传输平衡(VTE)技术,在(0001)面白宝石衬底表面上成功地制备出单相-γL iA lO2层。研究了白宝石衬底表面形貌对-γL iA lO2层质量的影响,发现白宝石衬底的表面粗糙度和退火处理是两个影响-γL iA lO2层质量的重要因素。要制备高质量的-γL iA lO2层,适度的表面粗糙度是恰当的。对白宝石衬底进行退火处理,-γL iA lO2层的择优取向变差。并对其中可能的机理进行了探讨。展开更多
Large-sized （～2 inch, 50.8 mm） γ-LiAlO2 single crystal has been grown by conventional Czochralski （Cz） method, but the crystal has a milky, dendriform center. The samples taken from transparent and milky parts w...Large-sized （～2 inch, 50.8 mm） γ-LiAlO2 single crystal has been grown by conventional Czochralski （Cz） method, but the crystal has a milky, dendriform center. The samples taken from transparent and milky parts were ground and examined by X-ray diffraction. All diffraction peaks could be indexed in γ-LiAlO2. The crystal quality was characterized by X-ray rocking curve. The full-width at half-maximum （FWHM） values are 116.9 and 132.0 arcsec for transparent and milky parts, respectively. The vapor transport equilibrium （VTE） technique was introduced to modify the crystal quality. After 1000℃/48 h, 1100℃/48 h, 1200℃/48 h VTE processes, the FWHM values dropped to 44.2 and 55.2 arcsec for transparent and milky part, respectively. The optical transmission of transparent part was greatly enhanced from 85% to 90%, and transmission of milky part from 75% to 80% in the range of 190~1900 nm at room temperature. When the VTE temperature was raised to 1300℃, the sample cracked and FWHM values of transparent and milky parts were increased to 55.2 and 80.9 arcsec, respectively. By combining Cz technique with VTE technique, large-sized and high quality γ-LiAlO2 crystal can be obtained.展开更多
A 0.09 mm m-plane GaN film is deposited via hydride vapor phase epitaxy （HVPE） on a γ-LiAlO2 substrate. To research the anisotropy between directions with different angles with the c-axis in the m plane, photolumin...A 0.09 mm m-plane GaN film is deposited via hydride vapor phase epitaxy （HVPE） on a γ-LiAlO2 substrate. To research the anisotropy between directions with different angles with the c-axis in the m plane, photoluminescence （PL） measurements were carried out. The results show that the electronic transition was influenced by the electric field along the c-axis, which results in an obvious anisotropy, but the influence was weakened by the hexagonal symmetry along the c-axis.展开更多
文摘本文分析了在不同衬底上生长无极性GaN薄膜的情况,这些衬底主要包括-γL iA lO2、r面蓝宝石等。通常在蓝宝石上制备的GaN外延膜是沿c轴生长的,而c轴是GaN的极性轴,导致GaN基器件有源层量子阱中出现很强的内建电场,发光效率会因此降低,发展非极性面外延,有望克服这一物理现象,使发光效率提高。
基金supported by the Project of High Technology Research and Development of China(2006AA03A101 and 2006AA03A103)the National Natural Science Foundation of China(60676004)the Science Research Program of Shanghai(05PJ14100 and 06dz11402).
文摘γ-LiAlO2 single crystal is a promising substrate for GaN heteroepitaxy. In this paper, we present the growth of large-sized LiAlO2 crystal by modified Czochralski method. The crystal quality was characterized by high-resolution X-ray diffraction and chemical etching. The results show that the as-grown crystal has perfect quality with the full width at half maximum （FWHM） of 17.7-22.6 arcsec and etch pits density of （0.3- 2.2）×10^4 cm^-2 throughout the crystal boule. The bottom of the crystal boule shows the best quality. The optical transmission spectra from UV to IR exhibits that the crystal is transparent from 0.2 to 5.5μm and becomes completely absorbing around 6.7μm wavelength, The optical absorption edge in near UV region is about 191 nm.
基金Funded by Southwest University of Technology (No.08zx0103)
文摘γ-LiAlO2：Eu3＋（Eu3＋：LAO） phosphor was obtained by gel combustion method using LiNO3,Al（NO3）3·9H2O,Eu（NO3）3·6H2O and citric acid as raw materials.The structure,morphology and luminescence were characterized by means of X-ray diffraction （XRD）,scanning electron microscopy （SEM）,photoluminescence （PL）.The results demonstrated that the phosphor was pure-phase of flaky tetragonal crystal system with a mean size of around 1 μm.The strongest excitation peak was at 254 nm,belonging to the broadband excitation and the maximum emission peak was at 613 nm,corresponding to the 5D0→7F2 transition of Eu3＋.Luminous intensity is closely related to the calcination temperature and doping concentration of Eu3＋.
文摘Transparent γ-LiAlO2 single crystal has been grown by Temperature Gradient technique. The surface of the wafer annealed in O2-atmosphere at 1100°C for 70 h became opaque and Li-poor phase (LiAl5O8); while, that annealed in Li-rich atmosphere kept transparent and smooth. The full-width at half maximum value dropped to 30 arcsecs when the wafer was annealed in Li-rich atmosphere. That annealed in O2-atmosphere increased to 78 arcsec. Compared with absorption spectra, we can conclude that the 196 nm absorption peak was caused by Li vacancies and the 736 nm peak was caused by O vacancies.
文摘Using vapor transport equilibration (VTE) technique we succeeded in the fabrication of single-phase γ-LiAlO2 layer on (0001) sapphire substrate. X-ray diffraction indicated that the as-fabricated layer was highly textured with [100] orientation at proper VTE treatment temperature range from 1050°C to 1100°C. The main factors affecting the quality of the γ-LiAlO2 layer were investigated by SEM and transmission spectra. These results reveal the possibility of fabricating γ-LiAlO2 (100)// sapphire (0001) composite substrate for GaN-based epitaxial film by VTE.
文摘采用气相传输平衡(VTE)技术,在(0001)面白宝石衬底表面上成功地制备出单相-γL iA lO2层。研究了白宝石衬底表面形貌对-γL iA lO2层质量的影响,发现白宝石衬底的表面粗糙度和退火处理是两个影响-γL iA lO2层质量的重要因素。要制备高质量的-γL iA lO2层,适度的表面粗糙度是恰当的。对白宝石衬底进行退火处理,-γL iA lO2层的择优取向变差。并对其中可能的机理进行了探讨。
文摘Large-sized （～2 inch, 50.8 mm） γ-LiAlO2 single crystal has been grown by conventional Czochralski （Cz） method, but the crystal has a milky, dendriform center. The samples taken from transparent and milky parts were ground and examined by X-ray diffraction. All diffraction peaks could be indexed in γ-LiAlO2. The crystal quality was characterized by X-ray rocking curve. The full-width at half-maximum （FWHM） values are 116.9 and 132.0 arcsec for transparent and milky parts, respectively. The vapor transport equilibrium （VTE） technique was introduced to modify the crystal quality. After 1000℃/48 h, 1100℃/48 h, 1200℃/48 h VTE processes, the FWHM values dropped to 44.2 and 55.2 arcsec for transparent and milky part, respectively. The optical transmission of transparent part was greatly enhanced from 85% to 90%, and transmission of milky part from 75% to 80% in the range of 190~1900 nm at room temperature. When the VTE temperature was raised to 1300℃, the sample cracked and FWHM values of transparent and milky parts were increased to 55.2 and 80.9 arcsec, respectively. By combining Cz technique with VTE technique, large-sized and high quality γ-LiAlO2 crystal can be obtained.
基金Project supported by State Key Development Program for Basic Research of China(No.2006CB6049)the National Hi-Tech Researchand Development Program of China(No.2006AA03A142)the National Natural Science Foundation of China(Nos.60721063,60731160628,60820106003)
文摘A 0.09 mm m-plane GaN film is deposited via hydride vapor phase epitaxy （HVPE） on a γ-LiAlO2 substrate. To research the anisotropy between directions with different angles with the c-axis in the m plane, photoluminescence （PL） measurements were carried out. The results show that the electronic transition was influenced by the electric field along the c-axis, which results in an obvious anisotropy, but the influence was weakened by the hexagonal symmetry along the c-axis.
