为改善普通马赫-曾德尔干涉仪(MZI)滤波器的滤波性能,本文将微环谐振器与MZI相结合,设计出一种新型的微环辅助MZI型滤波器。文章采用信号流程图法推导出该结构的传递函数,并对模型输出特性进行仿真分析。结果表明:当滤波器结构采用非平...为改善普通马赫-曾德尔干涉仪(MZI)滤波器的滤波性能,本文将微环谐振器与MZI相结合,设计出一种新型的微环辅助MZI型滤波器。文章采用信号流程图法推导出该结构的传递函数,并对模型输出特性进行仿真分析。结果表明:当滤波器结构采用非平衡型MZI时,通过引入微环的反馈调节机制,优化耦合系数,发现滤波器输出谱具有窄带高消光比特性;当采用平衡型MZI时,通过对滤波器参数的优化,实现滤波器输出端最大平坦滤波响应,阻带抑制(>40 d B),具有良好的滚降特性。与普通MZI滤波器相比,本文提出的微环辅助MZI型滤波器滤波性能有了明显改善。展开更多
Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a ...Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a need to reduce their losses and improve their performance to reduce electric power consumption. Current power semiconductor devices, such as inverters, are made of silicon (Si), but the performance of these Si power devices is reaching its limit due to physical properties and energy bandgap. To address this issue, recent developments in wide bandgap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), offer the potential for a new generation of power semiconductor devices that can perform significantly better than silicon-based devices. In this research, a green synthesized copper-zinc-tin-sulfide (CZTS) nanoparticle is proposed as a new WBG semiconductor material that could be used for optical and electronic devices. Its synthesis, consisting of the production methods and materials used, is discussed. The characterization is also discussed, and further research is recommended in the later sections to enable the continual advancement of this technology.展开更多
文摘为改善普通马赫-曾德尔干涉仪(MZI)滤波器的滤波性能,本文将微环谐振器与MZI相结合,设计出一种新型的微环辅助MZI型滤波器。文章采用信号流程图法推导出该结构的传递函数,并对模型输出特性进行仿真分析。结果表明:当滤波器结构采用非平衡型MZI时,通过引入微环的反馈调节机制,优化耦合系数,发现滤波器输出谱具有窄带高消光比特性;当采用平衡型MZI时,通过对滤波器参数的优化,实现滤波器输出端最大平坦滤波响应,阻带抑制(>40 d B),具有良好的滚降特性。与普通MZI滤波器相比,本文提出的微环辅助MZI型滤波器滤波性能有了明显改善。
文摘Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a need to reduce their losses and improve their performance to reduce electric power consumption. Current power semiconductor devices, such as inverters, are made of silicon (Si), but the performance of these Si power devices is reaching its limit due to physical properties and energy bandgap. To address this issue, recent developments in wide bandgap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), offer the potential for a new generation of power semiconductor devices that can perform significantly better than silicon-based devices. In this research, a green synthesized copper-zinc-tin-sulfide (CZTS) nanoparticle is proposed as a new WBG semiconductor material that could be used for optical and electronic devices. Its synthesis, consisting of the production methods and materials used, is discussed. The characterization is also discussed, and further research is recommended in the later sections to enable the continual advancement of this technology.
