Interface traps generated under hot carrier (HC) stress in LDD nMOST's are monitored by the direct current current voltage (DCIV) measurement technique and charge pumping (CP) technique.The measured and analyzed...Interface traps generated under hot carrier (HC) stress in LDD nMOST's are monitored by the direct current current voltage (DCIV) measurement technique and charge pumping (CP) technique.The measured and analyzed results show that the D peak in DCIV spectrum,which related to the drain region,is affected by a superfluous drain leakage current.The band trap band tunneling current is dominant of this current.展开更多
文摘Interface traps generated under hot carrier (HC) stress in LDD nMOST's are monitored by the direct current current voltage (DCIV) measurement technique and charge pumping (CP) technique.The measured and analyzed results show that the D peak in DCIV spectrum,which related to the drain region,is affected by a superfluous drain leakage current.The band trap band tunneling current is dominant of this current.
