The trench diamond junction barrier Schottky(JBS)diode with a sidewall enhanced structure is designed by Silvaco simulation.Comparing with the conventional trench JBS diode,Schottky contact areas are introduced on the...The trench diamond junction barrier Schottky(JBS)diode with a sidewall enhanced structure is designed by Silvaco simulation.Comparing with the conventional trench JBS diode,Schottky contact areas are introduced on the sidewall of the trench beside the top cathode.The sidewall Schottky contact weakens the junction field-effect transistor effect between the trenches to realize a low on-resistance and a high Baliga's figure of merit(FOM)value.In addition,the existence of the n-type diamond helps to suppress the electric field crowding effect and enhance the reverse breakdown voltage.With the optimal parameters of device structure,a high Baliga's FOM value of 2.28 GW/cm^(2) is designed.Therefore,the proposed sidewall-enhanced trench JBS diode is a promising component for the applications in diamond power electronics.展开更多
基金Project supported by the Key Research and Development Program of Guangdong Province,China(Grant No.2020B0101690001)the Natural Science Foundation of Sichuan Province,China(Grant No.2022NSFSC0886)the Open Project of State Key Laboratory of Superhard Materials,Jilin Province,China(Grant No.202314)。
文摘The trench diamond junction barrier Schottky(JBS)diode with a sidewall enhanced structure is designed by Silvaco simulation.Comparing with the conventional trench JBS diode,Schottky contact areas are introduced on the sidewall of the trench beside the top cathode.The sidewall Schottky contact weakens the junction field-effect transistor effect between the trenches to realize a low on-resistance and a high Baliga's figure of merit(FOM)value.In addition,the existence of the n-type diamond helps to suppress the electric field crowding effect and enhance the reverse breakdown voltage.With the optimal parameters of device structure,a high Baliga's FOM value of 2.28 GW/cm^(2) is designed.Therefore,the proposed sidewall-enhanced trench JBS diode is a promising component for the applications in diamond power electronics.
