A narrowed Si_(0.7)Ge_(0.3)channel fin field-effect transistor(FinFET)device is demonstrated in detail by using an accuratecyclic wet treatment process.The Si_(0.7)Ge_(0.3)fin/per side of 0.63 nm in thickness can be a...A narrowed Si_(0.7)Ge_(0.3)channel fin field-effect transistor(FinFET)device is demonstrated in detail by using an accuratecyclic wet treatment process.The Si_(0.7)Ge_(0.3)fin/per side of 0.63 nm in thickness can be accurately removed in each cycleby utilizing a self-limited oxidation with 40%HNO_(3)solution in 40 s and oxidation removal can be achieved with 1%HFsolution in 10 s.As a result,after the dummy gate removal,the fin width of Si_(0.7)Ge_(0.3)can be narrowed from 20 nm to 8 nmby utilizing 10 cycles of this wet treatment process.Compared with the conventional Si_(0.7)Ge_(0.3)FinFET under a similarprocess,the narrowed Si_(0.7)Ge_(0.3)channel FinFET can realize a strong gate control capability by using this newly developedwet treatment process,because its subthreshold slope can be reduced by 24%,improving from 87 mV/dec to 64 mV/dec.展开更多
基金Project supported by the Beijing Municipal Natural Science Foundation,China(Grant No.4202078).
文摘A narrowed Si_(0.7)Ge_(0.3)channel fin field-effect transistor(FinFET)device is demonstrated in detail by using an accuratecyclic wet treatment process.The Si_(0.7)Ge_(0.3)fin/per side of 0.63 nm in thickness can be accurately removed in each cycleby utilizing a self-limited oxidation with 40%HNO_(3)solution in 40 s and oxidation removal can be achieved with 1%HFsolution in 10 s.As a result,after the dummy gate removal,the fin width of Si_(0.7)Ge_(0.3)can be narrowed from 20 nm to 8 nmby utilizing 10 cycles of this wet treatment process.Compared with the conventional Si_(0.7)Ge_(0.3)FinFET under a similarprocess,the narrowed Si_(0.7)Ge_(0.3)channel FinFET can realize a strong gate control capability by using this newly developedwet treatment process,because its subthreshold slope can be reduced by 24%,improving from 87 mV/dec to 64 mV/dec.
