The graphene-based moiré superlattice has been demonstrated as an exciting system for investigating strong correlation phenomenon. However, the fabrication of such moiré superlattice mainly relies on transfe...The graphene-based moiré superlattice has been demonstrated as an exciting system for investigating strong correlation phenomenon. However, the fabrication of such moiré superlattice mainly relies on transfer technology. Here, we report the epitaxial growth of trilayer graphene(TLG) moiré superlattice on hexagonal boron nitride(h BN) by a remote plasma-enhanced chemical vapor deposition method. The as-grown TLG/h BN shows a uniform moiré pattern with a period of ~ 15 nm by atomic force microscopy(AFM) imaging, which agrees with the lattice mismatch between graphene and h BN. By fabricating the device with both top and bottom gates, we observed a gate-tunable bandgap at charge neutral point(CNP) and displacement field tunable satellite resistance peaks at half and full fillings. The resistance peak at half-filling indicates a strong electron–electron correlation in our grown TLG/h BN superlattice. In addition, we observed quantum Hall states at Landau level filling factors ν = 6, 10, 14,..., indicating that our grown trilayer graphene has the ABC stacking order. Our work suggests that epitaxy provides an easy way to fabricate stable and reproducible two-dimensional strongly correlated electronic materials.展开更多
基金Project supported by the National Key Research and Development Program of China (Grant No. 2020YFA0309600)the National Natural Science Foundation of China (Grant Nos. 61888102, 11834017, and 12074413)+3 种基金the Strategic Priority Research Program of CAS (Grant Nos. XDB30000000 and XDB33000000)the Key-Area Research and Development Program of Guangdong Province, China (Grant No. 2020B0101340001)support from the Elemental Strategy Initiative conducted by the MEXT, Japan (Grant No. JPMXP0112101001)JSPS KAKENHI (Grant Nos. 19H05790, 20H00354, and 21H05233), and A3 Foresight by JSPS
文摘The graphene-based moiré superlattice has been demonstrated as an exciting system for investigating strong correlation phenomenon. However, the fabrication of such moiré superlattice mainly relies on transfer technology. Here, we report the epitaxial growth of trilayer graphene(TLG) moiré superlattice on hexagonal boron nitride(h BN) by a remote plasma-enhanced chemical vapor deposition method. The as-grown TLG/h BN shows a uniform moiré pattern with a period of ~ 15 nm by atomic force microscopy(AFM) imaging, which agrees with the lattice mismatch between graphene and h BN. By fabricating the device with both top and bottom gates, we observed a gate-tunable bandgap at charge neutral point(CNP) and displacement field tunable satellite resistance peaks at half and full fillings. The resistance peak at half-filling indicates a strong electron–electron correlation in our grown TLG/h BN superlattice. In addition, we observed quantum Hall states at Landau level filling factors ν = 6, 10, 14,..., indicating that our grown trilayer graphene has the ABC stacking order. Our work suggests that epitaxy provides an easy way to fabricate stable and reproducible two-dimensional strongly correlated electronic materials.
基金the National Key Research and Development Program of China(2020YFA0309600)the National Natural Science Foundation of China(NSFC+6 种基金61888102,11834017,and 12074413)the Strategic Priority Research Program of Chinese Academy of Sciences(CASXDB30000000 and XDB33000000)Gen Long acknowledges the support from NSFC(12104330)the support from the Elemental Strategy Initiative conducted by the MEXT,Japan(JPMXP0112101001)JSPS KAKENHI(19H05790,20H00354,and 21H05233)A3 Foresight by JSPS。
