A novel normally-off double channel reverse conducting(DCRC)HEMT with an integrated MOS-channel diode(MCD)is proposed and investigated by TCAD simulation.The proposed structure has two features:one is double heterojun...A novel normally-off double channel reverse conducting(DCRC)HEMT with an integrated MOS-channel diode(MCD)is proposed and investigated by TCAD simulation.The proposed structure has two features:one is double heterojunctions to form dual 2DEG channels named the 1^(st)path and the 2^(nd)path for reverse conduction,and the other is the MCD forming by the trench source metal,source dielectric,and Ga N.At the initial reverse conduction stage,the MCD acts as a switch to control the 1^(st)path which would be turned on prior to the 2^(nd)path.Because of the introduction of the 1^(st)path,the DCRC-HEMT has an additional reverse conducting channel to help enhance the reverse conduction performance.Compared with the conventional HEMT(Conv.HEMT),the DCRC-HEMT can obtain a low reverse turn-on voltage(VRT)and its VRTis independent of the gate-source bias(VGS)at the same time.The DCRC-HEMT achieves the VRTof 0.62 V,which is 59.7%and 75.9%lower than that of the Conv.HEMT at VGS=0 V and-1 V,respectively.In addition,the forward conduction capability and blocking characteristics almost remain unchanged.In the end,the key fabrication flows of DCRC-HEMT are presented.展开更多
A novel SiC double-trench metal-oxide-semiconductor field effect transistor(MOSFET) with integrated MOS-channel diode is proposed and investigated by Sentaurus TCAD simulation. The new SiC MOSFET has a trench gate and...A novel SiC double-trench metal-oxide-semiconductor field effect transistor(MOSFET) with integrated MOS-channel diode is proposed and investigated by Sentaurus TCAD simulation. The new SiC MOSFET has a trench gate and a stepped-trench source, and features an integrated MOS-channel diode on the top sidewall of the source trench(MT MOS). In the reverse conduction state, the MOS-channel diode turns on firstly to prevent the internal parasitic body diode being activated, and thus reduces the turn-on voltage VFand suppresses the bipolar degradation phenomena. The VFof1.70 V(@Ids=-100 A/cm^(2)) for the SiC MT MOS is 38.2% lower than that of SiC double-trench MOSFET(DT MOS).Meanwhile, the reverse recovery charge Qrrof the MT MOS is 58.7% lower than that of the DT MOS at Iload= 700 A/cm^(2),and thus the reverse recovery loss is reduced. Furthermore, owing to the modulation effect induced by the double trenches,the MT MOS preserves the same superior forward conduction and blocking performance as those of DT MOS, with 22.9% and 18.2% improvement on breakdown voltage and RON,spcompared to the trench gate MOSFET with planar integrated SBD(ST MOS).展开更多
A vertical GaN field-effect transistor with an integrated self-adapted channel diode(CD-FET)is proposed to improve the reverse conduction performance.It features a channel diode(CD)formed between a trench source on th...A vertical GaN field-effect transistor with an integrated self-adapted channel diode(CD-FET)is proposed to improve the reverse conduction performance.It features a channel diode(CD)formed between a trench source on the insulator and a P-type barrier layer(PBL),together with a P-shield layer under the trench gate.At forward conduction,the CD is pinched off due to depletion effects caused by both the PBL and the metal-insulator-semiconductor structure from the trench source,without influencing the on-state characteristic of the CD-FET.At reverse conduction,the depletion region narrows and thus the CD turns on to achieve a very low turn-on voltage(V_(F)),preventing the inherent body diode from turning on.Meanwhile,the PBL and P-shield layer can modulate the electric field distribution to improve the off-state breakdown voltage(BV).Moreover,the P-shield not only shields the gate from a high electric field but also transforms part of C_(GD)to CGS so as to significantly reduce the gate charge(Q_(GD)),leading to a low switching loss(E_(switch)).Consequently,the proposed CD-FET achieves a low V_(F)of 1.65 V and a high BV of 1446 V,and V_(F),Q_(GD)and E_(switch)of the CD-FET are decreased by 49%,55%and 80%,respectively,compared with those of a conventional metal-oxide-semiconductor field-effect transistor(MOSFET).展开更多
基金the National Natural Science Foundations of China(Grant Nos.61874149 and U20A20208)the Outstanding Youth Science and Technology Foundation of China(Grant No.2018-JCJQ-ZQ-060)。
文摘A novel normally-off double channel reverse conducting(DCRC)HEMT with an integrated MOS-channel diode(MCD)is proposed and investigated by TCAD simulation.The proposed structure has two features:one is double heterojunctions to form dual 2DEG channels named the 1^(st)path and the 2^(nd)path for reverse conduction,and the other is the MCD forming by the trench source metal,source dielectric,and Ga N.At the initial reverse conduction stage,the MCD acts as a switch to control the 1^(st)path which would be turned on prior to the 2^(nd)path.Because of the introduction of the 1^(st)path,the DCRC-HEMT has an additional reverse conducting channel to help enhance the reverse conduction performance.Compared with the conventional HEMT(Conv.HEMT),the DCRC-HEMT can obtain a low reverse turn-on voltage(VRT)and its VRTis independent of the gate-source bias(VGS)at the same time.The DCRC-HEMT achieves the VRTof 0.62 V,which is 59.7%and 75.9%lower than that of the Conv.HEMT at VGS=0 V and-1 V,respectively.In addition,the forward conduction capability and blocking characteristics almost remain unchanged.In the end,the key fabrication flows of DCRC-HEMT are presented.
基金the support by the Science & Technology Program (High voltage and high power SiC material, devices and the application demonstration in power electronic transformers) of the State Grid Corporation of China Co. Ltd.supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400502)。
文摘A novel SiC double-trench metal-oxide-semiconductor field effect transistor(MOSFET) with integrated MOS-channel diode is proposed and investigated by Sentaurus TCAD simulation. The new SiC MOSFET has a trench gate and a stepped-trench source, and features an integrated MOS-channel diode on the top sidewall of the source trench(MT MOS). In the reverse conduction state, the MOS-channel diode turns on firstly to prevent the internal parasitic body diode being activated, and thus reduces the turn-on voltage VFand suppresses the bipolar degradation phenomena. The VFof1.70 V(@Ids=-100 A/cm^(2)) for the SiC MT MOS is 38.2% lower than that of SiC double-trench MOSFET(DT MOS).Meanwhile, the reverse recovery charge Qrrof the MT MOS is 58.7% lower than that of the DT MOS at Iload= 700 A/cm^(2),and thus the reverse recovery loss is reduced. Furthermore, owing to the modulation effect induced by the double trenches,the MT MOS preserves the same superior forward conduction and blocking performance as those of DT MOS, with 22.9% and 18.2% improvement on breakdown voltage and RON,spcompared to the trench gate MOSFET with planar integrated SBD(ST MOS).
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61874149 and U20A20208)the Outstanding Youth Science and Technology Foundation of China(Grant No.2018-JCJQ-ZQ-060).
文摘A vertical GaN field-effect transistor with an integrated self-adapted channel diode(CD-FET)is proposed to improve the reverse conduction performance.It features a channel diode(CD)formed between a trench source on the insulator and a P-type barrier layer(PBL),together with a P-shield layer under the trench gate.At forward conduction,the CD is pinched off due to depletion effects caused by both the PBL and the metal-insulator-semiconductor structure from the trench source,without influencing the on-state characteristic of the CD-FET.At reverse conduction,the depletion region narrows and thus the CD turns on to achieve a very low turn-on voltage(V_(F)),preventing the inherent body diode from turning on.Meanwhile,the PBL and P-shield layer can modulate the electric field distribution to improve the off-state breakdown voltage(BV).Moreover,the P-shield not only shields the gate from a high electric field but also transforms part of C_(GD)to CGS so as to significantly reduce the gate charge(Q_(GD)),leading to a low switching loss(E_(switch)).Consequently,the proposed CD-FET achieves a low V_(F)of 1.65 V and a high BV of 1446 V,and V_(F),Q_(GD)and E_(switch)of the CD-FET are decreased by 49%,55%and 80%,respectively,compared with those of a conventional metal-oxide-semiconductor field-effect transistor(MOSFET).
