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Electro-optic Sampling of Proton-bombarded GaP Crystal
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作者 ZHANGDa-ming tianxiaojian 《Semiconductor Photonics and Technology》 CAS 2000年第2期77-82,共6页
An electro-optic sampling system utilizing proton-bombarded GaP crystal as probe material has been built. Microwave signals propagating on the indium -tin oxide coplanar waveguide were measured by the system. Measurem... An electro-optic sampling system utilizing proton-bombarded GaP crystal as probe material has been built. Microwave signals propagating on the indium -tin oxide coplanar waveguide were measured by the system. Measurements of bombarded sample gave the resistance value of four orders greater than that of un- bombarded. The electric field shield effect induced by doped GaP was effectively decreased to approximate semi-insulator material. The system has the voltage sensitivity of about 40 mV/21/Hz with the microwave frequency of 1.15 GHz. 展开更多
关键词 Proton bombardment Electro-optic sampling Gain-switched semiconductor laser
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