The deep-level traps at grain boundaries(GBs)and halide ion migration are quite challenging for further enhancement of the stability and efficiency of perovskite solar cells(PSCs)as well as for the elimination of noto...The deep-level traps at grain boundaries(GBs)and halide ion migration are quite challenging for further enhancement of the stability and efficiency of perovskite solar cells(PSCs)as well as for the elimination of notorious hysteresis.Herein,we report a large-sized strongly coordinated organic anion GB anchoring strategy for suppressing ion migration and passivating defects in planar PSCs.The practical implementation of this strategy involves the incorporation of potassium salts containing a large-sized organic counter anion(4-sulfobenzoic acid monopotassium salt,SAMS)into the perovskite precursor.It has been found that anions within SAMS can be firmly anchored at GBs due to the strong coordination interaction between C=O and/or S=O at both ends of bulky anion and undercoordinated Pb^(2+)and/or halide vacancies,along with the hydrogen bond between–OH and formamidinium.SAMS can not only passivate shallowlevel defects but also cause more effective passivation of the deep-level defects.The GB manipulation strategy results in a reduced defect density,an increased carrier lifetime as well as suppressed ion migration,which in turn contributed to enhanced efficiency and stability of PSCs together with a thorough elimination of hysteresis.As a result,the SAMSmodified device with an outstanding fill factor of 0.84 delivers a significant improvement in efficiency(22.7%)in comparison with the control device(20.3%).The unencapsulated modified device demonstrates only little degradation after 1320 h at 60℃.展开更多
Achieving highly-efficient and stable perovskite solar cells(PSCs) with a simplified structure remains challenging, despite the tremendous potential for reducing preparation cost and facile processability by removing ...Achieving highly-efficient and stable perovskite solar cells(PSCs) with a simplified structure remains challenging, despite the tremendous potential for reducing preparation cost and facile processability by removing hole transport layer(HTL). In this work, eco-friendly glucose(Gl) as an interface modifier for HTL-free narrow bandgap tin-lead(Sn-Pb) PSCs is proposed. Gl not only enhances the wettability of the indium tin oxide to promote perovskite heterogeneous nucleation on substrate, but also realizes defect passivation by interacting with uncoordinated Pb^(2+) and Sn^(2+) in perovskite films. As a result, the quality of the perovskite films has been significantly improved, accompanied by reduced defects of bottom interface and optimized energy level structure of device, leading to an efficiency increase and a less nonradiative voltage loss of 0.102 V(for a bandgap of ~1.26 eV). Consequently, the optimized PSC delivers an unprecedented efficiency over 21% with high open-circuit voltage and enhanced stability, outperforming the control device. This work demonstrates a cost-effective approach to develop simplified structure high efficiency HTL-free Sn-Pb PSC.展开更多
基金the Support Plan for Overseas Students to Return to China for Entrepreneurship and Innovation(cx2020003)the Fundamental Research Funds for the Central Universities(2020CDJQY-A028 and 2020CDJ-LHZZ-074)the Natural Science Foundation of Chongqing(cstc2020jcyj-msxmX0629)。
文摘The deep-level traps at grain boundaries(GBs)and halide ion migration are quite challenging for further enhancement of the stability and efficiency of perovskite solar cells(PSCs)as well as for the elimination of notorious hysteresis.Herein,we report a large-sized strongly coordinated organic anion GB anchoring strategy for suppressing ion migration and passivating defects in planar PSCs.The practical implementation of this strategy involves the incorporation of potassium salts containing a large-sized organic counter anion(4-sulfobenzoic acid monopotassium salt,SAMS)into the perovskite precursor.It has been found that anions within SAMS can be firmly anchored at GBs due to the strong coordination interaction between C=O and/or S=O at both ends of bulky anion and undercoordinated Pb^(2+)and/or halide vacancies,along with the hydrogen bond between–OH and formamidinium.SAMS can not only passivate shallowlevel defects but also cause more effective passivation of the deep-level defects.The GB manipulation strategy results in a reduced defect density,an increased carrier lifetime as well as suppressed ion migration,which in turn contributed to enhanced efficiency and stability of PSCs together with a thorough elimination of hysteresis.As a result,the SAMSmodified device with an outstanding fill factor of 0.84 delivers a significant improvement in efficiency(22.7%)in comparison with the control device(20.3%).The unencapsulated modified device demonstrates only little degradation after 1320 h at 60℃.
基金supported by the National Natural Science Foundation of China (Grant No. 12074321)the Young Science and Technology Talents Development Project of Guizhou Provincial Education Department (Grant No. QJH-KY [2022]012)+2 种基金the Fundamental Research Funds for the Central Universities (Grant No. SWU020019)the Natural Science Foundation of Chongqing (Grant No. cstc2020jcyjmsxmx0648)the Chongqing Graduate Student Research Innovation Project (Grant No. CYB22119)。
文摘Achieving highly-efficient and stable perovskite solar cells(PSCs) with a simplified structure remains challenging, despite the tremendous potential for reducing preparation cost and facile processability by removing hole transport layer(HTL). In this work, eco-friendly glucose(Gl) as an interface modifier for HTL-free narrow bandgap tin-lead(Sn-Pb) PSCs is proposed. Gl not only enhances the wettability of the indium tin oxide to promote perovskite heterogeneous nucleation on substrate, but also realizes defect passivation by interacting with uncoordinated Pb^(2+) and Sn^(2+) in perovskite films. As a result, the quality of the perovskite films has been significantly improved, accompanied by reduced defects of bottom interface and optimized energy level structure of device, leading to an efficiency increase and a less nonradiative voltage loss of 0.102 V(for a bandgap of ~1.26 eV). Consequently, the optimized PSC delivers an unprecedented efficiency over 21% with high open-circuit voltage and enhanced stability, outperforming the control device. This work demonstrates a cost-effective approach to develop simplified structure high efficiency HTL-free Sn-Pb PSC.