Improved radio-frequency(RF)power performance of InAlN/GaN high electron mobility transistor(HEMT)is achieved by optimizing the rapid thermal annealing(RTA)process for high-performance low-voltage terminal application...Improved radio-frequency(RF)power performance of InAlN/GaN high electron mobility transistor(HEMT)is achieved by optimizing the rapid thermal annealing(RTA)process for high-performance low-voltage terminal applications.By optimizing the RTA temperature and time,the optimal annealing condition is found to enable low parasitic resistance and thus a high-performance device.Besides,compared with the non-optimized RTA HEMT,the optimized one demonstrates smoother ohmic metal surface morphology and better heterojunction quality including the less degraded heterojunction sheet resistance and clearer heterojunction interfaces as well as negligible material out-diffusion from the barrier to the channel and buffer.Benefiting from the lowered parasitic resistance,improved maximum output current density of 2279 mA·mm^(-1)and higher peak extrinsic transconductance of 526 mS·mm^(-1)are obtained for the optimized RTA HEMT.In addition,due to the superior heterojunction quality,the optimized HEMT shows reduced off-state leakage current of 7×10^(-3)mA·mm^(-1)and suppressed current collapse of only 4%,compared with those of 1×10^(-1)mA·mm^(-1)and 15%for the non-optimized one.At 8 GHz and V_(DS)of 6 V,a significantly improved power-added efficiency of 62%and output power density of 0.71 W·mm^(-1)are achieved for the optimized HEMT,as the result of the improvement in output current,knee voltage,off-state leakage current,and current collapse,which reveals the tremendous advantage of the optimized RTA HEMT in high-performance low-voltage terminal applications.展开更多
Field observations illustrated that, right-turn vehicles stopped at various positions when proceeding within the right-turn lanes, while some of them trespassed on the crosswalks with multiple stops. In this case, ped...Field observations illustrated that, right-turn vehicles stopped at various positions when proceeding within the right-turn lanes, while some of them trespassed on the crosswalks with multiple stops. In this case, pedestrians and bikes (ped/bike) are encountered unsmooth and hazardous crossings when right-turn vehicles encroaching their lanes. Meanwhile, this also causes conflicts between right-turn and through vehicles at the crossing street. To better protect ped/bike at crossings with right-turn vehicles, this paper proposes a concept of “right-turn vehicle box” (RTVB) as a supplemental treatment within right-turn lanes. Sight distance, geometric conditions, and behaviors of vehicles and ped/bike are key factors to consider so as to set up the criteria and to design the suitable treatment. A case study was conducted at an intersection pair in Houston, USA to shape the idea of RTVB, together with driving simulator tests under relevant scenarios. The preliminary crosscheck examination shows that the right-turn vehicle box could possibly provide ped/ bike with smoother and safer crossings. In the interim, the safety and efficiency of right-turn operations were also improved. To further validate the effects, implementation studies should be conducted before the RTVB can make its debut in practice. Future works will focus on the complete warrants and design details of this treatment. Moreover, the concept of “vehicle box” could also be transplanted to other places where turning movement(s) needs assistance or improvements.展开更多
基金Project supported by the National Key Research and Development Project of China (Grant No.2021YFB3602404)part by the National Natural Science Foundation of China (Grant Nos.61904135 and 62234009)+4 种基金the Key R&D Program of Guangzhou (Grant No.202103020002)Wuhu and Xidian University special fund for industry-university-research cooperation (Grant No.XWYCXY-012021014-HT)the Fundamental Research Funds for the Central Universities (Grant No.XJS221110)the Natural Science Foundation of Shaanxi,China (Grant No.2022JM-377)the Innovation Fund of Xidian University (Grant No.YJSJ23019)。
文摘Improved radio-frequency(RF)power performance of InAlN/GaN high electron mobility transistor(HEMT)is achieved by optimizing the rapid thermal annealing(RTA)process for high-performance low-voltage terminal applications.By optimizing the RTA temperature and time,the optimal annealing condition is found to enable low parasitic resistance and thus a high-performance device.Besides,compared with the non-optimized RTA HEMT,the optimized one demonstrates smoother ohmic metal surface morphology and better heterojunction quality including the less degraded heterojunction sheet resistance and clearer heterojunction interfaces as well as negligible material out-diffusion from the barrier to the channel and buffer.Benefiting from the lowered parasitic resistance,improved maximum output current density of 2279 mA·mm^(-1)and higher peak extrinsic transconductance of 526 mS·mm^(-1)are obtained for the optimized RTA HEMT.In addition,due to the superior heterojunction quality,the optimized HEMT shows reduced off-state leakage current of 7×10^(-3)mA·mm^(-1)and suppressed current collapse of only 4%,compared with those of 1×10^(-1)mA·mm^(-1)and 15%for the non-optimized one.At 8 GHz and V_(DS)of 6 V,a significantly improved power-added efficiency of 62%and output power density of 0.71 W·mm^(-1)are achieved for the optimized HEMT,as the result of the improvement in output current,knee voltage,off-state leakage current,and current collapse,which reveals the tremendous advantage of the optimized RTA HEMT in high-performance low-voltage terminal applications.
文摘Field observations illustrated that, right-turn vehicles stopped at various positions when proceeding within the right-turn lanes, while some of them trespassed on the crosswalks with multiple stops. In this case, pedestrians and bikes (ped/bike) are encountered unsmooth and hazardous crossings when right-turn vehicles encroaching their lanes. Meanwhile, this also causes conflicts between right-turn and through vehicles at the crossing street. To better protect ped/bike at crossings with right-turn vehicles, this paper proposes a concept of “right-turn vehicle box” (RTVB) as a supplemental treatment within right-turn lanes. Sight distance, geometric conditions, and behaviors of vehicles and ped/bike are key factors to consider so as to set up the criteria and to design the suitable treatment. A case study was conducted at an intersection pair in Houston, USA to shape the idea of RTVB, together with driving simulator tests under relevant scenarios. The preliminary crosscheck examination shows that the right-turn vehicle box could possibly provide ped/ bike with smoother and safer crossings. In the interim, the safety and efficiency of right-turn operations were also improved. To further validate the effects, implementation studies should be conducted before the RTVB can make its debut in practice. Future works will focus on the complete warrants and design details of this treatment. Moreover, the concept of “vehicle box” could also be transplanted to other places where turning movement(s) needs assistance or improvements.
基金Construction Project of Applied Talents Training Course in Guangdong Undergraduate Universities(2017SZ03)Quality Engineering Construction Project of Guangdong Province in 2017(2017SZ02)~~
