Using the method of Picus and Beer invariants, general expressions are obtained for the total intensity I and the degree of circular polarization Рcirc.of the luminescence of GaAs-type semiconductors with the partici...Using the method of Picus and Beer invariants, general expressions are obtained for the total intensity I and the degree of circular polarization Рcirc.of the luminescence of GaAs-type semiconductors with the participation of shallow acceptor levels in a longitudinal magnetic field H. Special cases are analyzed depending on the value and direction of the magnetic field strength, as well as on the constants of the g-factor of the acceptor g1,g2and the conduction band electron ge. In the case of a strong magnetic field H// [100], [111], [110], a numerical calculation of the angular dependence of the quantities I and Рcirc.was performed for some critical values of g2/g1, at which Рcirc.exhibits a sharp anisotropy in the range from −100% to +100%, and the intensity of the crystal radiation along the magnetic field tends to a minimum value.展开更多
The influence of thermal treatment on the lux-ampere characteristics of polycrystalline films from the CdSe<sub>x</sub>S<sub>1-x</sub> solid solution obtained by the method of thermal evaporati...The influence of thermal treatment on the lux-ampere characteristics of polycrystalline films from the CdSe<sub>x</sub>S<sub>1-x</sub> solid solution obtained by the method of thermal evaporation in a vacuum has been investigated. It is shown that at low illumination intensities L μ of electrons increases with a power law μ ~ L<sup>γ</sup>, first with the exponent γ > 1, then with γ ≈ 0.5, and their concentration n almost does not change. Starting from the intensity L > 12 - 15 lx, the electron concentration increases strongly n ~ L<sup>β</sup> from β ≈ 3.0, and the parameters n and μ reach relatively high values ~(10<sup>15</sup> - 10<sup>16</sup>) sm<sup>-3</sup> and ~(150 - 200) sm<sup>2</sup>/V·s, however further, at L > 50 lx, a weak dependence of n(L) and μ(L) with β, γ < 1.0 is found. The obtained experimental results are interpreted on the basis of a model of a semiconductor film with intergranular potential barriers when the concentration and barrier mechanisms of photoconductivity operate simultaneously.展开更多
The results of an experimental study of long-term relaxation of the photoelectret state of polycrystalline CdTe:(Ag, Cu, Cd) and Sb<sub>2</sub>Se<sub>3</sub>:Se films with an anomalous photovol...The results of an experimental study of long-term relaxation of the photoelectret state of polycrystalline CdTe:(Ag, Cu, Cd) and Sb<sub>2</sub>Se<sub>3</sub>:Se films with an anomalous photovoltaic property are presented. In such films, the residual photovoltage is caused by the separation of photocarriers by the built-in electrostatic field of the near-surface region of space charges and their asymmetric capture by deep levels of impurities or complexes, including impurity atoms and intrinsic defects, both in the bulk and on the surface of crystal grains. It has been shown that in activated films, a two-step exponential temporary relaxation of the initial photovoltage of the order of V<sub>APV</sub> ≈ (500-600) V is detected, and only 10% of it experiences long-term relaxation (t ≈ 100-120 min).展开更多
The scope of the study is the spectra of low-temperature (T = 2K) photoluminescence of a p-CdTe/n-CdS film heterostructure comprising a monolayer of CdTe microcrystals, where a single microcrystalline particle is typi...The scope of the study is the spectra of low-temperature (T = 2K) photoluminescence of a p-CdTe/n-CdS film heterostructure comprising a monolayer of CdTe microcrystals, where a single microcrystalline particle is typically one micron in size. Focus is made on the dominant band of “super-hot” emission appearing in the spectral region located in energy above the fundamental absorption edge of a CdTe bulk crystal. A theoretical model has been developed that assumes the existence of a space-charge layer inside a microcrystal, which leads to the formation of a triangular potential well for an electron near the surface. The anomalous emission band arises as a result of the optical transitions of electrons from near-surface levels of spatial quantization to valence band states.展开更多
A dominant intrinsic luminescence band, which is due to the surface potential barriers of crystalline grains, and an edge doublet, which arises as an LO-phonon repetition of the e-h band, has been revealed in the low-...A dominant intrinsic luminescence band, which is due to the surface potential barriers of crystalline grains, and an edge doublet, which arises as an LO-phonon repetition of the e-h band, has been revealed in the low-temperature photoluminescence spectra of fine-grained obliquely deposited films. Doping film with In impurity leads to quenching of the doublet band, while further thermal treatment causes activation of the intrinsic band, the half-width and the blue shift of the red edge of which correlates with the maximum value of anomalously high photovoltage generated by the film.展开更多
文摘Using the method of Picus and Beer invariants, general expressions are obtained for the total intensity I and the degree of circular polarization Рcirc.of the luminescence of GaAs-type semiconductors with the participation of shallow acceptor levels in a longitudinal magnetic field H. Special cases are analyzed depending on the value and direction of the magnetic field strength, as well as on the constants of the g-factor of the acceptor g1,g2and the conduction band electron ge. In the case of a strong magnetic field H// [100], [111], [110], a numerical calculation of the angular dependence of the quantities I and Рcirc.was performed for some critical values of g2/g1, at which Рcirc.exhibits a sharp anisotropy in the range from −100% to +100%, and the intensity of the crystal radiation along the magnetic field tends to a minimum value.
文摘The influence of thermal treatment on the lux-ampere characteristics of polycrystalline films from the CdSe<sub>x</sub>S<sub>1-x</sub> solid solution obtained by the method of thermal evaporation in a vacuum has been investigated. It is shown that at low illumination intensities L μ of electrons increases with a power law μ ~ L<sup>γ</sup>, first with the exponent γ > 1, then with γ ≈ 0.5, and their concentration n almost does not change. Starting from the intensity L > 12 - 15 lx, the electron concentration increases strongly n ~ L<sup>β</sup> from β ≈ 3.0, and the parameters n and μ reach relatively high values ~(10<sup>15</sup> - 10<sup>16</sup>) sm<sup>-3</sup> and ~(150 - 200) sm<sup>2</sup>/V·s, however further, at L > 50 lx, a weak dependence of n(L) and μ(L) with β, γ < 1.0 is found. The obtained experimental results are interpreted on the basis of a model of a semiconductor film with intergranular potential barriers when the concentration and barrier mechanisms of photoconductivity operate simultaneously.
文摘The results of an experimental study of long-term relaxation of the photoelectret state of polycrystalline CdTe:(Ag, Cu, Cd) and Sb<sub>2</sub>Se<sub>3</sub>:Se films with an anomalous photovoltaic property are presented. In such films, the residual photovoltage is caused by the separation of photocarriers by the built-in electrostatic field of the near-surface region of space charges and their asymmetric capture by deep levels of impurities or complexes, including impurity atoms and intrinsic defects, both in the bulk and on the surface of crystal grains. It has been shown that in activated films, a two-step exponential temporary relaxation of the initial photovoltage of the order of V<sub>APV</sub> ≈ (500-600) V is detected, and only 10% of it experiences long-term relaxation (t ≈ 100-120 min).
文摘The scope of the study is the spectra of low-temperature (T = 2K) photoluminescence of a p-CdTe/n-CdS film heterostructure comprising a monolayer of CdTe microcrystals, where a single microcrystalline particle is typically one micron in size. Focus is made on the dominant band of “super-hot” emission appearing in the spectral region located in energy above the fundamental absorption edge of a CdTe bulk crystal. A theoretical model has been developed that assumes the existence of a space-charge layer inside a microcrystal, which leads to the formation of a triangular potential well for an electron near the surface. The anomalous emission band arises as a result of the optical transitions of electrons from near-surface levels of spatial quantization to valence band states.
文摘A dominant intrinsic luminescence band, which is due to the surface potential barriers of crystalline grains, and an edge doublet, which arises as an LO-phonon repetition of the e-h band, has been revealed in the low-temperature photoluminescence spectra of fine-grained obliquely deposited films. Doping film with In impurity leads to quenching of the doublet band, while further thermal treatment causes activation of the intrinsic band, the half-width and the blue shift of the red edge of which correlates with the maximum value of anomalously high photovoltage generated by the film.
