A compact model is proposed to derive the charge density of the AlInSb/InSb HEMT devices by con- sidering the variation of Fermi level, the first subband, the second subband and sheet carrier charge density with appli...A compact model is proposed to derive the charge density of the AlInSb/InSb HEMT devices by con- sidering the variation of Fermi level, the first subband, the second subband and sheet carrier charge density with applied gate voltage. The proposed model considers the Fermi level dependence of charge density and vice versa. The analytical results generated by the proposed model are compared and they agree well with the experimental results. The developed model can be used to implement a physics based compact model for an InSb HEMT device in SPICE applications.展开更多
We have analyzed the effective oxide thickness （EOT） of the dielectric material for which we have optimum performance and the output characteristics of the silicon nanowire transistors by replacing the traditional S...We have analyzed the effective oxide thickness （EOT） of the dielectric material for which we have optimum performance and the output characteristics of the silicon nanowire transistors by replacing the traditional Si02 gate insulator with a material that has a much higher dielectric constant （high-k） gate, materials like Si3N4, Al2O3, Y2O3 and HfO2. We have also analyzed the channel conductance, the effect of a change in thickness, the average velocity of the charge carrier and the conductance efficiency in order to study the performance of silicon nanowire transistors in the nanometer region. The analysis was performed using the Fettoy, a numerical simulator for ballistic nanowire transistors using a simple top of the barrier （Natori） approach, which is composed of several matlab scripts. Our results show that hafnium oxide （HfO2） gate insulator material provides good thermal stability, a high recrystallization temperature and better interface qualities when compared with other gate insulator materials; also the effective oxide thickness of lifO2 is found to be 0.4 nm.展开更多
This paper proposes a new two dimensional（2D） analytical model for a germanium（Ge） single gate silicon-on-insulator tunnel field effect transistor（SG SOI TFET）. The parabolic approximation technique is used to s...This paper proposes a new two dimensional（2D） analytical model for a germanium（Ge） single gate silicon-on-insulator tunnel field effect transistor（SG SOI TFET）. The parabolic approximation technique is used to solve the 2D Poisson equation with suitable boundary conditions and analytical expressions are derived for the surfacepotential,theelectricfieldalongthechannelandtheverticalelectricfield.Thedeviceoutputtunnellingcurrent is derived further by using the electric fields. The results show that Ge based TFETs have significant improvements inon-currentcharacteristics.Theeffectivenessoftheproposedmodelhasbeenverifiedbycomparingtheanalytical model results with the technology computer aided design（TCAD） simulation results and also comparing them with results from a silicon based TFET.展开更多
A physics-based analytical model for symmetrically biased double-gate（DG） MOSFETs considering quantum mechanical effects is proposed.Schrodinger＇s and Poisson＇s equations are solved simultaneously using a variatio...A physics-based analytical model for symmetrically biased double-gate（DG） MOSFETs considering quantum mechanical effects is proposed.Schrodinger＇s and Poisson＇s equations are solved simultaneously using a variational approach.Solving the Poisson and Schrodinger equations simultaneously reveals quantum mechanical effects（QME） that influence the performance of DG MOSFETs.The inversion charge and electrical potential distributions perpendicular to the channel are expressed in closed forms.We systematically evaluated and analyzed the potentials and inversion charges,taking QME into consideration,in Si based double gate devices.The effect of silicon thickness variation in inversion-layer charge and potentials are quantitatively defined.The analytical solutions provide good physical insight into the quantization caused by quantum confinement under various gate biases.展开更多
We propose a scaling theory for single gate Al In Sb/In Sb high electron mobility transistors（HEMTs） by solving the two-dimensional（2D） Poisson equation. In our model, the effective conductive path effect（ECPE） ...We propose a scaling theory for single gate Al In Sb/In Sb high electron mobility transistors（HEMTs） by solving the two-dimensional（2D） Poisson equation. In our model, the effective conductive path effect（ECPE） is taken into account to overcome the problems arising from the device scaling. The potential in the effective conducting path is developed and a simple scaling equation is derived. This equation is solved to obtain the minimum channel potential Φdeff,minand the new scaling factor α to model the subthreshold behavior of the HEMTs. The developed model minimizes the leakage current and improves the subthreshold swing degradation of the HEMTs. The results of the analytical model are verified by numerical simulation with a Sentaurus TCAD device simulator.展开更多
We have developed a 2D analytical model for the single gate AllnSb/lnSb HEMT device by solving the Poisson equation using the parabolic approximation method. The developed model analyses the device perfomance by calcu...We have developed a 2D analytical model for the single gate AllnSb/lnSb HEMT device by solving the Poisson equation using the parabolic approximation method. The developed model analyses the device perfomance by calculating the parameters such as surface potential, electric field distribution and drain current. The high mobility of the AlInSb/InSb quantum makes this HEMT ideal for high frequency, high power applications. The working of the single gate AllnSb/InSb HEMT device is studied by considering the variation of gate source voltage, drain source voltage, and channel length under the gate region and temperature. The carrier transport efficiency is improved by uniform electric field along the channel and the peak values near the source and drain regions. The results from the analytical model are compared with that of numerical simulations （TCAD） and a good agreement between them is achieved.展开更多
Quantum effects are predominant in tri-gate MOSFETs, so a model should be developed. For the first time, this paper presents the analytical model for quantization effects of thin film silicon tri-gate MOSFETs by using...Quantum effects are predominant in tri-gate MOSFETs, so a model should be developed. For the first time, this paper presents the analytical model for quantization effects of thin film silicon tri-gate MOSFETs by using variational approach. An analytical expression of the inversion charge distribution function（ICDF） or wave function for the tri-gate MOSFETs has been obtained. This obtained ICDF is used to calculate the important device parameters, such as the inversion charge centroid and inversion charge density. The results are validated against with the simulation data.展开更多
An analytical model for surrounding gate metal-oxide-semiconductor field effect transistors （MOS- FETs） considering quantum effects is presented. To achieve this goal, we have used a variational approach for solving...An analytical model for surrounding gate metal-oxide-semiconductor field effect transistors （MOS- FETs） considering quantum effects is presented. To achieve this goal, we have used a variational approach for solving the Poisson and Schrodinger equations. This model is developed to provide an analytical expression for the inversion charge distribution function for all regions of the device operation. This expression is used to calculate the other important parameters like the inversion charge centroid, threshold voltage and inversion charge density. The calculated expressions for the above parameters are simple and accurate. The validity of this model was checked for the devices with different device dimensions and bias voltages. The calculated results are compared with the simulation results and they show good agreement.展开更多
基金Project supported by the Council of Scientific & Industrial Research(CSIR),India under the Senior Research Fellowship Scheme(No.08/237(0005)/2012-EMR-I)
文摘A compact model is proposed to derive the charge density of the AlInSb/InSb HEMT devices by con- sidering the variation of Fermi level, the first subband, the second subband and sheet carrier charge density with applied gate voltage. The proposed model considers the Fermi level dependence of charge density and vice versa. The analytical results generated by the proposed model are compared and they agree well with the experimental results. The developed model can be used to implement a physics based compact model for an InSb HEMT device in SPICE applications.
基金supported by the Council of Scientific & Industrial Research(CSIR),India under the SRF scheme(No.08/237(0005)/2012-EMR-I)
文摘We have analyzed the effective oxide thickness （EOT） of the dielectric material for which we have optimum performance and the output characteristics of the silicon nanowire transistors by replacing the traditional Si02 gate insulator with a material that has a much higher dielectric constant （high-k） gate, materials like Si3N4, Al2O3, Y2O3 and HfO2. We have also analyzed the channel conductance, the effect of a change in thickness, the average velocity of the charge carrier and the conductance efficiency in order to study the performance of silicon nanowire transistors in the nanometer region. The analysis was performed using the Fettoy, a numerical simulator for ballistic nanowire transistors using a simple top of the barrier （Natori） approach, which is composed of several matlab scripts. Our results show that hafnium oxide （HfO2） gate insulator material provides good thermal stability, a high recrystallization temperature and better interface qualities when compared with other gate insulator materials; also the effective oxide thickness of lifO2 is found to be 0.4 nm.
文摘This paper proposes a new two dimensional（2D） analytical model for a germanium（Ge） single gate silicon-on-insulator tunnel field effect transistor（SG SOI TFET）. The parabolic approximation technique is used to solve the 2D Poisson equation with suitable boundary conditions and analytical expressions are derived for the surfacepotential,theelectricfieldalongthechannelandtheverticalelectricfield.Thedeviceoutputtunnellingcurrent is derived further by using the electric fields. The results show that Ge based TFETs have significant improvements inon-currentcharacteristics.Theeffectivenessoftheproposedmodelhasbeenverifiedbycomparingtheanalytical model results with the technology computer aided design（TCAD） simulation results and also comparing them with results from a silicon based TFET.
文摘A physics-based analytical model for symmetrically biased double-gate（DG） MOSFETs considering quantum mechanical effects is proposed.Schrodinger＇s and Poisson＇s equations are solved simultaneously using a variational approach.Solving the Poisson and Schrodinger equations simultaneously reveals quantum mechanical effects（QME） that influence the performance of DG MOSFETs.The inversion charge and electrical potential distributions perpendicular to the channel are expressed in closed forms.We systematically evaluated and analyzed the potentials and inversion charges,taking QME into consideration,in Si based double gate devices.The effect of silicon thickness variation in inversion-layer charge and potentials are quantitatively defined.The analytical solutions provide good physical insight into the quantization caused by quantum confinement under various gate biases.
基金Project supported by the Council of Scientific&Industrial Research(CSIR),Government of India under the SRF Scheme(Sanction Letter No:08/237(0005)/2012-EMR-I)
文摘We propose a scaling theory for single gate Al In Sb/In Sb high electron mobility transistors（HEMTs） by solving the two-dimensional（2D） Poisson equation. In our model, the effective conductive path effect（ECPE） is taken into account to overcome the problems arising from the device scaling. The potential in the effective conducting path is developed and a simple scaling equation is derived. This equation is solved to obtain the minimum channel potential Φdeff,minand the new scaling factor α to model the subthreshold behavior of the HEMTs. The developed model minimizes the leakage current and improves the subthreshold swing degradation of the HEMTs. The results of the analytical model are verified by numerical simulation with a Sentaurus TCAD device simulator.
基金supported by the Council of Scientific and Industrial Research(CSIR),India,under the SRF scheme(sanction letter No.08/237(0005)/2012-EMR-I)
文摘We have developed a 2D analytical model for the single gate AllnSb/lnSb HEMT device by solving the Poisson equation using the parabolic approximation method. The developed model analyses the device perfomance by calculating the parameters such as surface potential, electric field distribution and drain current. The high mobility of the AlInSb/InSb quantum makes this HEMT ideal for high frequency, high power applications. The working of the single gate AllnSb/InSb HEMT device is studied by considering the variation of gate source voltage, drain source voltage, and channel length under the gate region and temperature. The carrier transport efficiency is improved by uniform electric field along the channel and the peak values near the source and drain regions. The results from the analytical model are compared with that of numerical simulations （TCAD） and a good agreement between them is achieved.
基金The authors are gratefu l for the financial support by W OS—A Scheme,Department of Science and Technology,New Delhi,Govern ment of India through the grant SRJWOS-A/ET-41/2011.
文摘Quantum effects are predominant in tri-gate MOSFETs, so a model should be developed. For the first time, this paper presents the analytical model for quantization effects of thin film silicon tri-gate MOSFETs by using variational approach. An analytical expression of the inversion charge distribution function（ICDF） or wave function for the tri-gate MOSFETs has been obtained. This obtained ICDF is used to calculate the important device parameters, such as the inversion charge centroid and inversion charge density. The results are validated against with the simulation data.
基金the financial support by WOS-A Scheme,Department of Science and Technology,New Delhi, Government of India through the grant SR/WOS-A/ET41/2011
文摘An analytical model for surrounding gate metal-oxide-semiconductor field effect transistors （MOS- FETs） considering quantum effects is presented. To achieve this goal, we have used a variational approach for solving the Poisson and Schrodinger equations. This model is developed to provide an analytical expression for the inversion charge distribution function for all regions of the device operation. This expression is used to calculate the other important parameters like the inversion charge centroid, threshold voltage and inversion charge density. The calculated expressions for the above parameters are simple and accurate. The validity of this model was checked for the devices with different device dimensions and bias voltages. The calculated results are compared with the simulation results and they show good agreement.
