Investigating the structures and properties of Au-Ge mixed clusters can give insight into the microscopic mechanisms in gold-catalyzed Ge films and can also provide valuable information for the production of germanium...Investigating the structures and properties of Au-Ge mixed clusters can give insight into the microscopic mechanisms in gold-catalyzed Ge films and can also provide valuable information for the production of germanium-based functional materials. In this work, size-selected anion photoelectron spectroscopy and theoretical calculations were used to explore the structural evolution and electronic properties of Au2Gen^-/0 (n=1-8) clusters. It is found that the two Au atoms in Au2Gen^-/0 (n=1-8) showed high coordination numbers and weak aurophilic interactions. The global minima of Au2Gen- anions and Au2Gen neutrals are in spin doublet and singlet states, respectively. Au2Gen- anions and Au2Gen neutrals showed similar structural features, except for Au2Ge4^-/0 and Au2Ge5^-/0. The C2v symmetric V-shaped structure is observed for Au2Ge1^-/0, while Au2Ge2^-/0 has a C2v symmetric dibridged structure. Au2Ge3^-/0 can be viewed as the two Au atoms attached to different Ge-Ge bonds of Ge3 triangle. Au2Ge4- has two Au atoms edge-capping Ge4 tetrahedron, while Au2Ge4 neutral adopts a C2v symmetric double Au atoms face-capping Ge4 rhombus. Au2Ge5-8^-/0 show triangular, tetragonal, and pentagonal prism-based geometries. Au2Ge6 adopts a C2v symmetric tetragonal prism structure and exhibits σ plus π double bonding characters.展开更多
The effect of channel length and width on the large and small-signal parameters of the graphene field effect transistor have been explored using an analytical approach.In the case of faster saturation as well as extre...The effect of channel length and width on the large and small-signal parameters of the graphene field effect transistor have been explored using an analytical approach.In the case of faster saturation as well as extremely high transit frequency,the graphene field effect transistor shows outstanding performance.From the transfer curve,it is observed that there is a positive shift of Dirac point from the voltage of 0.15 V to 0.35 V because of reducing channel length from 440 nm to 20 nm and this curve depicts that graphene shows ambipolar behavior.Besides,it is found that because of widening channel the drain current increases and the maximum current is found approximately 2.4 mA and 6 mA for channel width 2μm and 5μm respectively.Furthermore,an approximate symmetrical capacitance-voltage(C-V)characteristic of the graphene field effect transistor is obtained and the capacitance reduces when the channel length decreases but the capacitance can be increased by raising the channel width.In addition,a high transconductance,that demands high-speed radio frequency(RF)applications,of 6.4 mS at channel length 20 nm and 4.45 mS at channel width 5μm along with a high transit frequency of 3.95 THz have been found that demands high-speed radio frequency applications.展开更多
基金supported by the National Natural Science Foundation of China (No.21273246 and No.21103202)the Chinese Academy of Sciences (No.QYZDB-SSW-SLH024)+3 种基金the Natural Science Foundation of Shandong Province of China (No.ZR2018BB040)Open Funds of Beijing National Laboratory for Molecular Sciences (No.BNLMS201804)Research Start-up Funds (Doctoral Science Foundation) of Heze University (No.XY18BS02)Chinese Academy of Sciences President’s International Fellowship Initiative (PIFI) (No.2018VMA0011)
文摘Investigating the structures and properties of Au-Ge mixed clusters can give insight into the microscopic mechanisms in gold-catalyzed Ge films and can also provide valuable information for the production of germanium-based functional materials. In this work, size-selected anion photoelectron spectroscopy and theoretical calculations were used to explore the structural evolution and electronic properties of Au2Gen^-/0 (n=1-8) clusters. It is found that the two Au atoms in Au2Gen^-/0 (n=1-8) showed high coordination numbers and weak aurophilic interactions. The global minima of Au2Gen- anions and Au2Gen neutrals are in spin doublet and singlet states, respectively. Au2Gen- anions and Au2Gen neutrals showed similar structural features, except for Au2Ge4^-/0 and Au2Ge5^-/0. The C2v symmetric V-shaped structure is observed for Au2Ge1^-/0, while Au2Ge2^-/0 has a C2v symmetric dibridged structure. Au2Ge3^-/0 can be viewed as the two Au atoms attached to different Ge-Ge bonds of Ge3 triangle. Au2Ge4- has two Au atoms edge-capping Ge4 tetrahedron, while Au2Ge4 neutral adopts a C2v symmetric double Au atoms face-capping Ge4 rhombus. Au2Ge5-8^-/0 show triangular, tetragonal, and pentagonal prism-based geometries. Au2Ge6 adopts a C2v symmetric tetragonal prism structure and exhibits σ plus π double bonding characters.
基金supported by the National Key Research and Development Program of China(No.2018YFE0204000)the National Natural Science Foundation of China(No.61674141,No.51972300,No.61504134 and No.21975245)+2 种基金The Strategic Priority Research Program of Chinese Academy of Sciences(No.XDB43000000)The World Academy of Sciences(TWAS),and the Key Research Program of Frontier Science,Chinese Academy of Sciences(No.QYZDBSSW-SLH006)support from Youth Innovation Promotion Association,Chinese Academy of Sciences(No.2020114).
文摘The effect of channel length and width on the large and small-signal parameters of the graphene field effect transistor have been explored using an analytical approach.In the case of faster saturation as well as extremely high transit frequency,the graphene field effect transistor shows outstanding performance.From the transfer curve,it is observed that there is a positive shift of Dirac point from the voltage of 0.15 V to 0.35 V because of reducing channel length from 440 nm to 20 nm and this curve depicts that graphene shows ambipolar behavior.Besides,it is found that because of widening channel the drain current increases and the maximum current is found approximately 2.4 mA and 6 mA for channel width 2μm and 5μm respectively.Furthermore,an approximate symmetrical capacitance-voltage(C-V)characteristic of the graphene field effect transistor is obtained and the capacitance reduces when the channel length decreases but the capacitance can be increased by raising the channel width.In addition,a high transconductance,that demands high-speed radio frequency(RF)applications,of 6.4 mS at channel length 20 nm and 4.45 mS at channel width 5μm along with a high transit frequency of 3.95 THz have been found that demands high-speed radio frequency applications.
