Four depth treatments of subsurface drip irrigation pipes were designated as 1) at 20,2) 30 and 3) 40 cm depths all with a drip-proof flumes underneath,and 4) at 30 cm without a drip-proof flume to investigate the res...Four depth treatments of subsurface drip irrigation pipes were designated as 1) at 20,2) 30 and 3) 40 cm depths all with a drip-proof flumes underneath,and 4) at 30 cm without a drip-proof flume to investigate the responses of a tomato root system to different technical parameters of subsurface drip irrigation in a glass greenhouse,to evaluate tomato growth as affected by subsurface drip irrigation,and to develop an integrated subsurface drip irrigation method for optimal tomato yield and water use in a glass greenhouse. Tomato seedlings were planted above the subsurface drip irrigation pipe. Most of the tomato roots in treatment 1 were found in the top 0-20 cm soil depth with weak root activity but with yield and water use efficiency (WUE) significantly less (P ---- 0.05) than treatment 2; root activity and tomato yield were significantly higher (P = 0.05) with treatment 3 compared to treatment 1; and with treatment 2 the tomato roots and shoots grew harmoniously with root activity,nutrient uptake,tomato yield and WUE significantly higher (P= 0.05) or as high as the other treatments. These findings suggested that subsurface drip irrigation with pipes at 30 cm depth with a drip-proof flume placed underneath was best for tomato production in greenhouses. In addition,the irrigation interval should be about 7-8 days and the irrigation rate should be set to 225 m3 ha-1 per event.展开更多
Using pentacene as an active material, the organic thin film transistors were fabricated on Si3N4/p-Si substrates by using RF-magnetron sputtered amorphous aluminium as the gate electrode contact, and using highly dop...Using pentacene as an active material, the organic thin film transistors were fabricated on Si3N4/p-Si substrates by using RF-magnetron sputtered amorphous aluminium as the gate electrode contact, and using highly doped Si as the gate electrode and substrate with plasma-enhanced chemical vapor deposited （PECVD） silicon nitride as gate dielectric. Pentacene thin films were deposited by thermal evaporation on dielectrics as the active layer, then RF-magnetron sputtered amorphous aluminium was used as the source and drain contacts. Measurement results show that field effect mobility and threshold voltage are 0.043 cm2/（V·s） and 12.6 V, respectively, and on-off current ratio is nearly 1×103.展开更多
基金Project supported by the Chinese Academy of Sciences (CAS) (No. KZCX-SW-416-02), and the K. C. Wong Post Doctoral Research Award Fund of CAS (No. 29, 2002).
文摘Four depth treatments of subsurface drip irrigation pipes were designated as 1) at 20,2) 30 and 3) 40 cm depths all with a drip-proof flumes underneath,and 4) at 30 cm without a drip-proof flume to investigate the responses of a tomato root system to different technical parameters of subsurface drip irrigation in a glass greenhouse,to evaluate tomato growth as affected by subsurface drip irrigation,and to develop an integrated subsurface drip irrigation method for optimal tomato yield and water use in a glass greenhouse. Tomato seedlings were planted above the subsurface drip irrigation pipe. Most of the tomato roots in treatment 1 were found in the top 0-20 cm soil depth with weak root activity but with yield and water use efficiency (WUE) significantly less (P ---- 0.05) than treatment 2; root activity and tomato yield were significantly higher (P = 0.05) with treatment 3 compared to treatment 1; and with treatment 2 the tomato roots and shoots grew harmoniously with root activity,nutrient uptake,tomato yield and WUE significantly higher (P= 0.05) or as high as the other treatments. These findings suggested that subsurface drip irrigation with pipes at 30 cm depth with a drip-proof flume placed underneath was best for tomato production in greenhouses. In addition,the irrigation interval should be about 7-8 days and the irrigation rate should be set to 225 m3 ha-1 per event.
文摘Using pentacene as an active material, the organic thin film transistors were fabricated on Si3N4/p-Si substrates by using RF-magnetron sputtered amorphous aluminium as the gate electrode contact, and using highly doped Si as the gate electrode and substrate with plasma-enhanced chemical vapor deposited （PECVD） silicon nitride as gate dielectric. Pentacene thin films were deposited by thermal evaporation on dielectrics as the active layer, then RF-magnetron sputtered amorphous aluminium was used as the source and drain contacts. Measurement results show that field effect mobility and threshold voltage are 0.043 cm2/（V·s） and 12.6 V, respectively, and on-off current ratio is nearly 1×103.
