The discovery and manipulation of topological Hall effect(THE),an abnormal magnetoelectric response mostly related to the Dzyaloshinskii–Moriya interaction(DMI),are promising for next-generation spintronic devices ba...The discovery and manipulation of topological Hall effect(THE),an abnormal magnetoelectric response mostly related to the Dzyaloshinskii–Moriya interaction(DMI),are promising for next-generation spintronic devices based on topological spin textures such as magnetic skyrmions.However,most skyrmions and THE are stabilized in a narrow temperature window either below or over room temperature with high critical current manipulation.It is still elusive and challenging to achieve large THE with both wide temperature window till room temperature and low critical current manipulation.Here,using controllable,naturally oxidized sub-20 and sub-10 nm 2D van der Waals room-temperature ferromagnetic Fe_(3)GaTe_(2-x)crystals,we report robust 2D skyrmion THE with ultrawide temperature window ranging in three orders of magnitude from 2 to 300 K,in combination with giant THE of~5.4μΩ·cm at 10 K and~0.15μΩ·cm at 300 K,which is 1–3 orders of magnitude larger than that of all known room-temperature 2D skyrmion systems.Moreover,room-temperature current-controlled THE is also realized with a low critical current density of~6.2×10^(5)A·cm^(-2).First-principles calculations unveil natural oxidation-induced highly enhanced 2D interfacial DMI reasonable for robust giant THE.This work paves the way to room-temperature electrically controlled 2D THE-based practical spintronic devices.展开更多
Two-dimensional van der Waals magnetic materials have demonstrated great potential for new-generation high-performance and versatile spintronic devices.Among them,magnetic tunnel junctions(MTJs)based on A-type antifer...Two-dimensional van der Waals magnetic materials have demonstrated great potential for new-generation high-performance and versatile spintronic devices.Among them,magnetic tunnel junctions(MTJs)based on A-type antiferromagnets,such as CrI_(3),possess record-high tunneling magnetoresistance(TMR)because of the spin filter effect of each insulating unit ferromagnetic layer.However,the relatively low working temperature and the instability of the chromium halides hinder applications of this system.Using a different technical scheme,we fabricated the MTJs based on an air-stable A-type antiferromagnet,CrSBr,and observed a giant TMR of up to 47000%at 5 K.Meanwhile,because of a relatively high Néel temperature of CrSBr,a sizable TMR of about 50%was observed at 130 K,which makes a big step towards spintronic devices at room temperature.Our results reveal the potential of realizing magnetic information storage in CrSBr-based spin-filter MTJs.展开更多
基金supported by the National Key Research and Development Program of China(Grant No.2022YFE0134600)the National Natural Science Foundation of China(Grant Nos.52272152,61674063,and 62074061)+2 种基金Shenzhen Science and Technology Innovation Committee(Grant No.JCYJ20210324142010030)the Natural Science Foundation of Hubei Province(Grant No.2022CFA031)Interdisciplinary Research Program of Huazhong University of Science and Technology(Grant No.5003110122)。
文摘The discovery and manipulation of topological Hall effect(THE),an abnormal magnetoelectric response mostly related to the Dzyaloshinskii–Moriya interaction(DMI),are promising for next-generation spintronic devices based on topological spin textures such as magnetic skyrmions.However,most skyrmions and THE are stabilized in a narrow temperature window either below or over room temperature with high critical current manipulation.It is still elusive and challenging to achieve large THE with both wide temperature window till room temperature and low critical current manipulation.Here,using controllable,naturally oxidized sub-20 and sub-10 nm 2D van der Waals room-temperature ferromagnetic Fe_(3)GaTe_(2-x)crystals,we report robust 2D skyrmion THE with ultrawide temperature window ranging in three orders of magnitude from 2 to 300 K,in combination with giant THE of~5.4μΩ·cm at 10 K and~0.15μΩ·cm at 300 K,which is 1–3 orders of magnitude larger than that of all known room-temperature 2D skyrmion systems.Moreover,room-temperature current-controlled THE is also realized with a low critical current density of~6.2×10^(5)A·cm^(-2).First-principles calculations unveil natural oxidation-induced highly enhanced 2D interfacial DMI reasonable for robust giant THE.This work paves the way to room-temperature electrically controlled 2D THE-based practical spintronic devices.
基金the National Key Research and Development Program of China(Grant No.2021YFB3601300)the National Natural Science Foundation of China(Grants Nos.52161160334,52271237,12274437,12134017,and 12174426)+2 种基金the Science Center of the National Science Foundation of China(Grant No.52088101)the Beijing Natural Science Foundation(Grant No.Z190009)the K.C.Wong Education Foundation(Grant No.GJTD2019-14)。
文摘Two-dimensional van der Waals magnetic materials have demonstrated great potential for new-generation high-performance and versatile spintronic devices.Among them,magnetic tunnel junctions(MTJs)based on A-type antiferromagnets,such as CrI_(3),possess record-high tunneling magnetoresistance(TMR)because of the spin filter effect of each insulating unit ferromagnetic layer.However,the relatively low working temperature and the instability of the chromium halides hinder applications of this system.Using a different technical scheme,we fabricated the MTJs based on an air-stable A-type antiferromagnet,CrSBr,and observed a giant TMR of up to 47000%at 5 K.Meanwhile,because of a relatively high Néel temperature of CrSBr,a sizable TMR of about 50%was observed at 130 K,which makes a big step towards spintronic devices at room temperature.Our results reveal the potential of realizing magnetic information storage in CrSBr-based spin-filter MTJs.
基金supported by the National Natural Science Foundation of China (22276076, 22236002, and 22306074)the Fundamental Research Funds for the Central Universities (JUSRP622032)Jiangsu Agricultural Science and Technology Innovation Fund (JASTIF, CX(21)2036)。
