A novel 4H-Si C trench insulated gate bipolar transistor(IGBT)with a controllable hole-extracting(CHE)path is proposed and investigated in this paper.The CHE path is controlled by metal semiconductor gate(MES gate)and...A novel 4H-Si C trench insulated gate bipolar transistor(IGBT)with a controllable hole-extracting(CHE)path is proposed and investigated in this paper.The CHE path is controlled by metal semiconductor gate(MES gate)and metal oxide semiconductor gate(MOS gate)in the p-shield region.The grounded p-shield region can significantly suppress the high electric field around gate oxide in Si C devices,but it weakens the conductivity modulation in the Si C trench IGBT by rapidly sweeping out holes.This effect can be eliminated by introducing the CHE path.The CHE path is pinched off by the high gate bias voltage at on-state to maintain high conductivity modulation and obtain a comparatively low on-state voltage(VON).During the turn-off transient,the CHE path is formed,which contributes to a decreased turn-off loss(EOFF).Based on numerical simulation,the EOFFof the proposed IGBT is reduced by 89%compared with the conventional IGBT at the same VONand the VONof the proposed IGBT is reduced by 50%compared to the grounded p-shield IGBT at the same EOFF.In addition,the average power reduction for the proposed device can be 51.0%to 81.7%and 58.2%to 72.1%with its counterparts at a wide frequency range of 500 Hz to 10 k Hz,revealing a great improvement of frequency characteristics.展开更多
Surface coating technology is an effective way to solve the interface insulation problem of DC GIS/GIL basin insulators, but the performance of the coating will change greatly, and the insulation strength will be comp...Surface coating technology is an effective way to solve the interface insulation problem of DC GIS/GIL basin insulators, but the performance of the coating will change greatly, and the insulation strength will be completely lost, after long-term use in the extreme conditions of corona erosion. In this research, the multi-needle-plate electrode platform was constructed to explore the long-term use performance of Si C-doped nanocomposite exposed to corona discharge in SF6gas. Samples with a high Si C content have advantages in maintaining physical and chemical properties such as elemental composition, erosion depth, surface roughness and mass loss. The nanocomposite doped with 6 wt.% Si C has prominent surface insulation strength after long term exposure to corona, and the others are close to losing, or have completely lost,their insulating properties. Furthermore, the degradation mechanism of physicochemical properties of composite exposed to corona discharge was investigated with the proposed Reax FF MD model of energetic particles from SF6decomposition bombarding the epoxy surface. The reaction process of SF particles and F particles with the cross-linked epoxy resin, and the Si C nanoparticles providing shelter to the surrounding polymer and mitigating their suffering direct bombardment, have been established. The damage propagation depth, mass loss and surface roughness change of nanocomposite material bombarded by SF6decomposition products is reproduced in this simulation. Finally, the deterioration mechanism of insulation properties for the Si C-doped composite was elucidated with DFT analysis. The band gap of the molecule containing S drops directly from the initial 7.785 e V to 1.875 e V, which causes the deterioration of surface electric properties.展开更多
基金Project supported by the Hunan Provincial Natural Science Foundation of China(Grant No.2021JJ30738)Scientific Research Fund of Hunan Provincial Education Department(Grant No.19K001)Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering’s Open Fund Project-2020(Grant No.202016)。
文摘A novel 4H-Si C trench insulated gate bipolar transistor(IGBT)with a controllable hole-extracting(CHE)path is proposed and investigated in this paper.The CHE path is controlled by metal semiconductor gate(MES gate)and metal oxide semiconductor gate(MOS gate)in the p-shield region.The grounded p-shield region can significantly suppress the high electric field around gate oxide in Si C devices,but it weakens the conductivity modulation in the Si C trench IGBT by rapidly sweeping out holes.This effect can be eliminated by introducing the CHE path.The CHE path is pinched off by the high gate bias voltage at on-state to maintain high conductivity modulation and obtain a comparatively low on-state voltage(VON).During the turn-off transient,the CHE path is formed,which contributes to a decreased turn-off loss(EOFF).Based on numerical simulation,the EOFFof the proposed IGBT is reduced by 89%compared with the conventional IGBT at the same VONand the VONof the proposed IGBT is reduced by 50%compared to the grounded p-shield IGBT at the same EOFF.In addition,the average power reduction for the proposed device can be 51.0%to 81.7%and 58.2%to 72.1%with its counterparts at a wide frequency range of 500 Hz to 10 k Hz,revealing a great improvement of frequency characteristics.
基金supported by National Natural Science Foundation of China(Nos.51737005,51929701,52177147 and 52127812)。
文摘Surface coating technology is an effective way to solve the interface insulation problem of DC GIS/GIL basin insulators, but the performance of the coating will change greatly, and the insulation strength will be completely lost, after long-term use in the extreme conditions of corona erosion. In this research, the multi-needle-plate electrode platform was constructed to explore the long-term use performance of Si C-doped nanocomposite exposed to corona discharge in SF6gas. Samples with a high Si C content have advantages in maintaining physical and chemical properties such as elemental composition, erosion depth, surface roughness and mass loss. The nanocomposite doped with 6 wt.% Si C has prominent surface insulation strength after long term exposure to corona, and the others are close to losing, or have completely lost,their insulating properties. Furthermore, the degradation mechanism of physicochemical properties of composite exposed to corona discharge was investigated with the proposed Reax FF MD model of energetic particles from SF6decomposition bombarding the epoxy surface. The reaction process of SF particles and F particles with the cross-linked epoxy resin, and the Si C nanoparticles providing shelter to the surrounding polymer and mitigating their suffering direct bombardment, have been established. The damage propagation depth, mass loss and surface roughness change of nanocomposite material bombarded by SF6decomposition products is reproduced in this simulation. Finally, the deterioration mechanism of insulation properties for the Si C-doped composite was elucidated with DFT analysis. The band gap of the molecule containing S drops directly from the initial 7.785 e V to 1.875 e V, which causes the deterioration of surface electric properties.
