Ferroelectricity of group-Ⅳ chalcogenides MX(M = Ge,Sn;X = Se,S) monolayers has been extensively investigated.However,how the ferroelectricity evolves in their one-dimensional nanotubes remains largely unclear.Employ...Ferroelectricity of group-Ⅳ chalcogenides MX(M = Ge,Sn;X = Se,S) monolayers has been extensively investigated.However,how the ferroelectricity evolves in their one-dimensional nanotubes remains largely unclear.Employing an accurate deep-learning interatomic potential of first-principles precision,we uncover a general stepwise mechanism for polarization switching in zigzag and chiral Ge S nanotubes,which has an energy barrier that is substantially lower than the one associated with the conventional one-step switching mechanism.The switching barrier(per atom) gradually decreases with increasing the number of intermediate steps and converges to a value that is almost independent of the tube diameter.In the chiral Ge S nanotubes,the switching path of polarization with chirality coupling is preferred at less intermediate steps.This study unveils novel ferroelectric switching behaviors in one-dimensional nanotubes,which is critical to coupling ferroelectricity and chirality.展开更多
土壤非线性电离效应是影响接地体散流能力的重要因素。为了研究冲击电流作用下土壤非线性电离对接地体泄流能力的影响规律,以单根水平接地体为研究对象,采用三维时域有限差分(3-D FDTD)数值分析方法,基于L-D(Liew and Darveniza)提出的...土壤非线性电离效应是影响接地体散流能力的重要因素。为了研究冲击电流作用下土壤非线性电离对接地体泄流能力的影响规律,以单根水平接地体为研究对象,采用三维时域有限差分(3-D FDTD)数值分析方法,基于L-D(Liew and Darveniza)提出的土壤非线性电离效应模型;根据电磁场理论,建立了水平接地体仿真模型,然后从暂态冲击接地电阻、最大暂态地电位升(GPR)和电导率分布等接地体特性参数角度来研究水平接地体冲击散流的物理过程。研究表明:1雷电流在接地体及其周围土壤的散流是复杂的电磁暂态过程,接地体的散流极不均匀;2土壤非线性电离效应减小暂态冲击接地电阻,而且考虑了土壤非线性电离效应的最大暂态地电位升要远远低于未考虑土壤非线性电离的情况;3接地体端部附近土壤电离区域大于中部附近电离区域,具有明显的端部效应。展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos.52172136,11991060,12088101,and U2230402)。
文摘Ferroelectricity of group-Ⅳ chalcogenides MX(M = Ge,Sn;X = Se,S) monolayers has been extensively investigated.However,how the ferroelectricity evolves in their one-dimensional nanotubes remains largely unclear.Employing an accurate deep-learning interatomic potential of first-principles precision,we uncover a general stepwise mechanism for polarization switching in zigzag and chiral Ge S nanotubes,which has an energy barrier that is substantially lower than the one associated with the conventional one-step switching mechanism.The switching barrier(per atom) gradually decreases with increasing the number of intermediate steps and converges to a value that is almost independent of the tube diameter.In the chiral Ge S nanotubes,the switching path of polarization with chirality coupling is preferred at less intermediate steps.This study unveils novel ferroelectric switching behaviors in one-dimensional nanotubes,which is critical to coupling ferroelectricity and chirality.
文摘土壤非线性电离效应是影响接地体散流能力的重要因素。为了研究冲击电流作用下土壤非线性电离对接地体泄流能力的影响规律,以单根水平接地体为研究对象,采用三维时域有限差分(3-D FDTD)数值分析方法,基于L-D(Liew and Darveniza)提出的土壤非线性电离效应模型;根据电磁场理论,建立了水平接地体仿真模型,然后从暂态冲击接地电阻、最大暂态地电位升(GPR)和电导率分布等接地体特性参数角度来研究水平接地体冲击散流的物理过程。研究表明:1雷电流在接地体及其周围土壤的散流是复杂的电磁暂态过程,接地体的散流极不均匀;2土壤非线性电离效应减小暂态冲击接地电阻,而且考虑了土壤非线性电离效应的最大暂态地电位升要远远低于未考虑土壤非线性电离的情况;3接地体端部附近土壤电离区域大于中部附近电离区域,具有明显的端部效应。
