We fabricated Sb 2 Se 3 thin film solar cells using tris(8-hydroxy-quinolinato)aluminum(Alq 3)as an electron transport layer by vacuum thermal evaporation.Another small organic molecule of N,N'-bis(naphthalen-1-yl...We fabricated Sb 2 Se 3 thin film solar cells using tris(8-hydroxy-quinolinato)aluminum(Alq 3)as an electron transport layer by vacuum thermal evaporation.Another small organic molecule of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine(NPB)was used as a hole transport layer.We took ITO/NPB/Sb 2 Se 3/Alq 3/Al as the device architecture.An open circuit voltage(V o c)of 0.37 V,a short circuit current density(J s c)of 21.2 mA/cm 2,and a power conversion efficiency(PCE)of 3.79%were obtained on an optimized device.A maximum external quantum efficiency of 73%was achieved at 600 nm.The J s c,V o c,and PCE were dramatically enhanced after introducing an electron transport layer of Alq 3.The results suggest that the interface state density at Sb 2 Se 3/Al interface is decreased by inserting an Alq 3 layer,and the charge recombination loss in the device is suppressed.This work provides a new electron transport material for Sb 2 Se 3 thin film solar cells.展开更多
基金Supported by the High Level Talents Project of Hainan Basic and Applied Research Program(Natural Science)(Grant No.2019RC118)the Open Fund of the State Key Laboratory of Molecular Reaction Dynamics in DICP(Grant No.SKLMRD-K202005).
文摘We fabricated Sb 2 Se 3 thin film solar cells using tris(8-hydroxy-quinolinato)aluminum(Alq 3)as an electron transport layer by vacuum thermal evaporation.Another small organic molecule of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine(NPB)was used as a hole transport layer.We took ITO/NPB/Sb 2 Se 3/Alq 3/Al as the device architecture.An open circuit voltage(V o c)of 0.37 V,a short circuit current density(J s c)of 21.2 mA/cm 2,and a power conversion efficiency(PCE)of 3.79%were obtained on an optimized device.A maximum external quantum efficiency of 73%was achieved at 600 nm.The J s c,V o c,and PCE were dramatically enhanced after introducing an electron transport layer of Alq 3.The results suggest that the interface state density at Sb 2 Se 3/Al interface is decreased by inserting an Alq 3 layer,and the charge recombination loss in the device is suppressed.This work provides a new electron transport material for Sb 2 Se 3 thin film solar cells.
