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First-principles study and electronic structures of Mn-doped ultrathin ZnO nanofilms 被引量:9
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作者 E.Salmani A.Benyoussef +2 位作者 h.ez-zahraouy E.h.Saidi O.Mounkachi 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第10期362-368,共7页
The first-principles density functional calculation is used to investigate the electronic structures and magnetic properties of Mn-doped and N-co-doped ZnO nanofilms.The band structure calculation shows that the band ... The first-principles density functional calculation is used to investigate the electronic structures and magnetic properties of Mn-doped and N-co-doped ZnO nanofilms.The band structure calculation shows that the band gaps of ZnO films with 2,4,and 6 layers are larger than the band gap of the bulk with wurtzite structure and decrease with the increase of film thickness.However,the four-layer ZnO nanofilms exhibit ferromagnetic phases for Mn concentrations less than 24% and 12% for Mn-doping performed in the whole layers and two layers of the film respectively,while they exhibit spin glass phases for higher Mn concentrations.It is also found,on the one hand,that the spin glass phase turns into the ferromagnetic one,with the substitution of nitrogen atoms for oxygen atoms,for nitrogen concentrations higher than 16% and 5% for Mn-doping performed in the whole layers and two layers of the film respectively.On the other hand,the spin-glass state is more stable for ZnO bulk containing 5% of Mn impurities,while the ferromagnetic phase is stable by introducing the p-type carriers into the bulk system.Moreover,it is shown that using the effective field theory for ferromagnetic system,the Curie temperature is close to the room temperature for the undamped Ruderman-Kittel-Kasuya-Yoshida(RKKY) interaction. 展开更多
关键词 ultra thin film ZNO ab initio electronic structure magnetic properties effective field theory
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An investigation of merging and diverging cars on a multi-lane road using a cellular automation model 被引量:2
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作者 K.Jetto h.ez-zahraouy A.Benyoussef 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第11期565-572,共8页
In this paper, we have investigated two observed situations in a multi-lane road. The first one concerns a fast merging vehicle. The second situation is related to the case of a fast vehicle leaving the fastest lane b... In this paper, we have investigated two observed situations in a multi-lane road. The first one concerns a fast merging vehicle. The second situation is related to the case of a fast vehicle leaving the fastest lane back into the slowest lane and targeting a specific way out. We are interested in the relaxation time T, i.e., which is the time that the merging (diverging) vehicle spends before reaching the desired lane. Using analytical treatment and numerical simulations for the NaSch model, we have found two states, namely, the free state in which the merging (diverging) vehicle reaches the desired lane, and the trapped state in which T diverges. We have established phase diagrams for several values of the braking probability. In the second situation, we have shown that diverging from the fast lane targeting a specific way out is not a simple task. Even if the diverging vehicle is in the free phase, two different states can be distinguished. One is the critical state, in which the diverging car can probably reach the desired way out. The other is the safe state, in which the diverging car can surely reach the desired way out. In order to be in the safe state, we have found that the driver of the diverging car must know the critical distance (below which the way out will be out of his reach) in each lane. Furthermore, this critical distance depends on the density of cars, and it follows an exponential law. 展开更多
关键词 traffic flow merging and diverging area intelligent transportation system cellular au-tomation
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Magnetic properties of Mn-doped GaN with defects:ab-initio calculations
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作者 E.Salmani A.Benyoussef +1 位作者 h.ez-zahraouy E.h.Saidi 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第8期297-303,共7页
According to first-principles density functional calculations, we have investigated the magnetic properties of Mn- doped GaN with defects, Ga1-x-yVGxMny N1-z-tVNzOt with Mn substituted at Ga sites, nitrogen vacancies ... According to first-principles density functional calculations, we have investigated the magnetic properties of Mn- doped GaN with defects, Ga1-x-yVGxMny N1-z-tVNzOt with Mn substituted at Ga sites, nitrogen vacancies VN, gallium vacancies VG and oxygen substituted at nitrogen sites. The magnetic interaction in Mn-doped GaN favours the ferromagnetic coupling via the double exchange mechanism. The ground state is found to be well described by a model based on a Mn3+-d5 in a high spin state coupled via a double exchange to a partially delocalized hole accommodated in the 2p states of neighbouring nitrogen ions. The effect of defects on ferromagnetic coupling is investigated. It is found that in the presence of donor defects, such as oxygen substituted at nitrogen sites, nitrogen vacancy antiferromagnetic interactions appear, while in the case of Ga vacancies, the interactions remain ferromagnetic; in the case of acceptor defects like Mg and Zn codoping, ferromagnetism is stabilized. The formation energies of these defects are computed. Furthermore, the half-metallic behaviours appear in some studied compounds. 展开更多
关键词 diluted magnetic semiconductor GaN:Mn DEFECTS ab-initio magnetic properties
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Electronic and magnetic structures of V-doped zinc blende Zn_(1-x)V_xN_yO_(1-y) and Zn_(1-x)V_xP_yO_(1-y)
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作者 N.Mamouni M.Belaiche +5 位作者 A.Benyoussef A.El Kenz h.ez-zahraouy M.Loulidi E.h.Saidi E.K.hlil 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第8期419-424,共6页
Electronic and magnetic structures of zinc blende ZnO doped with V impurities are studied by first-principles calculations based on the Korringa-Kohn-Rostoker (KKR) method combined with the coherent potential approx... Electronic and magnetic structures of zinc blende ZnO doped with V impurities are studied by first-principles calculations based on the Korringa-Kohn-Rostoker (KKR) method combined with the coherent potential approximation (CPA). Calculations for the substitution of O by N or P are performed and the magnetic moment is found to be sensitive to the N or P content. Furthermore, the system exhibits a half-metallic band structure accompanied by the broadening of vanadium bands. The mechanism responsible for ferromagnetism is also discussed and the stability of the ferromagnetic state compared with that of the paramagnetic state is systematically investigated by calculating the total energy difference between them by using supercell method. 展开更多
关键词 ab initio calculations density of states magnetic moment doping diluted magneticsemiconductors
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Multilayer transition in a spin-1 Blume Capel model with RKKY interaction and quantum transverse anisotropy
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作者 N.Tahiri h.ez-zahraouy A.Benyoussef 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第1期609-615,共7页
Using mean-field theory, we have studied the effect of quantum transverse anisotropies with RKKY interaction on the multi-layer transition and magnetic properties of the spin-1 Blume-Capel model of a system formed by ... Using mean-field theory, we have studied the effect of quantum transverse anisotropies with RKKY interaction on the multi-layer transition and magnetic properties of the spin-1 Blume-Capel model of a system formed by two magnetic multi-layer materials, of different thicknesses, separated by a non-magnetic spacer of thickness M. It is found that the multilayer magnetic order-disorder transition temperature depends strongly on the value of the transverse anisotropy. The multilayer transition temperature decreases when increasing the transverse anisotropy. Furthermore, there exists a critical quantum transverse anisotropy △xL beyond which the separate transitions occur in the two magnetic layers. The critical transverse anisotropy AxL decreases (increases) on increasing the non-magnetic spacer of thickness M (on increasing the crystal field), and AxL undergoes oscillations as a function of the Fermi level. 展开更多
关键词 quantum transverse anisotropy ORDER-DISORDER lavering transitions. RKKY interaction
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