The classic rare-earth tritelluride provides an ideal platform to study the strong correlation state owing to its stable structures and abundance of orders.Here we report the observation of an undiscovered charge dens...The classic rare-earth tritelluride provides an ideal platform to study the strong correlation state owing to its stable structures and abundance of orders.Here we report the observation of an undiscovered charge density wave(CDW)in LaTe_(3)under 4.2 K,the transition temperature of the CDW states is fitted to be 35 K,and confirmed by the evanishment of this CDW at 77 K via using temperature-dependent scanning tunneling microscope/spectroscopy.The coexistence of these CDWs is confirmed by the atomic resolution and beating pattern simulation.It is the first time to observe the coexistence of unidirectional charge density waves system,providing a new platform to understand the competition and evolution between strong correlation states,and get a deeper sight into the phase lag between different order parameters.展开更多
As the basis of modern electronics and optoelectronics,high-performance,multi-functional p-n junctions have manifested and occupied an important position.However,the performance of the silicon-based p-n junctions decl...As the basis of modern electronics and optoelectronics,high-performance,multi-functional p-n junctions have manifested and occupied an important position.However,the performance of the silicon-based p-n junctions declines gradually as the thickness approaches to few nanometers.The heterojunction constructed by two-dimensional(2D)materials can significantly improve the device performance compared with traditional technologies.Here,we report the In Se-Te type-II van der Waals heterostructures with rectification ratio up to 1.56×10^(7) at drain-source voltage of±2 V.The p-n junction exhibits a photovoltaic and photoelectric effect under different laser wavelengths and densities and has high photoresponsivity and detectivity under low irradiated light power.Moreover,the heterojunction has stable photo/dark current states and good photoelectric switching characteristics.Such high-performance heterostructured device based on 2D materials provides a new way for futural electronic and optoelectronic devices.展开更多
基金supported by the National Key R&D Program of China(Grant Nos.2019YFA0308500,2018YFA0305800)the National Natural Science Foundation of China(Grant Nos.61925111,52250402)+1 种基金the Chinese Academy of Sciences(Grant Nos.XDB28000000,YSBR-003)the Fundamental Research Funds for the Central Universities。
文摘The classic rare-earth tritelluride provides an ideal platform to study the strong correlation state owing to its stable structures and abundance of orders.Here we report the observation of an undiscovered charge density wave(CDW)in LaTe_(3)under 4.2 K,the transition temperature of the CDW states is fitted to be 35 K,and confirmed by the evanishment of this CDW at 77 K via using temperature-dependent scanning tunneling microscope/spectroscopy.The coexistence of these CDWs is confirmed by the atomic resolution and beating pattern simulation.It is the first time to observe the coexistence of unidirectional charge density waves system,providing a new platform to understand the competition and evolution between strong correlation states,and get a deeper sight into the phase lag between different order parameters.
基金Project supported by the Ministry of Science and Technology of China(Grant No.2018YFA0305800)the National Natural Science Foundation of China(Grant No.61888102)the Chinese Academy of Sciences(Grant Nos.ZDBSSSW-WHC001,XDB33030100,XDB30000000,and YSBR-003)。
文摘As the basis of modern electronics and optoelectronics,high-performance,multi-functional p-n junctions have manifested and occupied an important position.However,the performance of the silicon-based p-n junctions declines gradually as the thickness approaches to few nanometers.The heterojunction constructed by two-dimensional(2D)materials can significantly improve the device performance compared with traditional technologies.Here,we report the In Se-Te type-II van der Waals heterostructures with rectification ratio up to 1.56×10^(7) at drain-source voltage of±2 V.The p-n junction exhibits a photovoltaic and photoelectric effect under different laser wavelengths and densities and has high photoresponsivity and detectivity under low irradiated light power.Moreover,the heterojunction has stable photo/dark current states and good photoelectric switching characteristics.Such high-performance heterostructured device based on 2D materials provides a new way for futural electronic and optoelectronic devices.
