We have developed a 2D analytical model for the single gate AllnSb/lnSb HEMT device by solving the Poisson equation using the parabolic approximation method. The developed model analyses the device perfomance by calcu...We have developed a 2D analytical model for the single gate AllnSb/lnSb HEMT device by solving the Poisson equation using the parabolic approximation method. The developed model analyses the device perfomance by calculating the parameters such as surface potential, electric field distribution and drain current. The high mobility of the AlInSb/InSb quantum makes this HEMT ideal for high frequency, high power applications. The working of the single gate AllnSb/InSb HEMT device is studied by considering the variation of gate source voltage, drain source voltage, and channel length under the gate region and temperature. The carrier transport efficiency is improved by uniform electric field along the channel and the peak values near the source and drain regions. The results from the analytical model are compared with that of numerical simulations （TCAD） and a good agreement between them is achieved.展开更多
基金supported by the Council of Scientific and Industrial Research(CSIR),India,under the SRF scheme(sanction letter No.08/237(0005)/2012-EMR-I)
文摘We have developed a 2D analytical model for the single gate AllnSb/lnSb HEMT device by solving the Poisson equation using the parabolic approximation method. The developed model analyses the device perfomance by calculating the parameters such as surface potential, electric field distribution and drain current. The high mobility of the AlInSb/InSb quantum makes this HEMT ideal for high frequency, high power applications. The working of the single gate AllnSb/InSb HEMT device is studied by considering the variation of gate source voltage, drain source voltage, and channel length under the gate region and temperature. The carrier transport efficiency is improved by uniform electric field along the channel and the peak values near the source and drain regions. The results from the analytical model are compared with that of numerical simulations （TCAD） and a good agreement between them is achieved.
