Flat-band physics of moirésuperlattices,originally discovered in the celebrated twisted bilayer graphene,have recently been intensively explored in multilayer graphene systems that can be further controlled by el...Flat-band physics of moirésuperlattices,originally discovered in the celebrated twisted bilayer graphene,have recently been intensively explored in multilayer graphene systems that can be further controlled by electric field.In this work,we experimentally find the evidence of correlated insulators at half filling of the electron moiréband of twisted monolayer–trilayer graphene with a twist angle around 1.2°.Van Hove singularity(VHS),manifested as enhanced resistance and zero Hall voltage,is observed to be distinct in conduction and valence flat bands.It also depends on the direction and magnitude of the displacement fields,consistent with the asymmetric crystal structure.While the resistance ridges at VHS can be enhanced by magnetic fields,when they cross commensurate fillings of the moirésuperlattice in the conduction band,the enhancement is so strong that signatures of correlated insulator appear,which may further develop into an energy gap depending on the correlation strength.At last,Fermi velocity derived from temperature coefficients of resistivity is compared between conduction and valence bands with different displacement fields.It is found that electronic correlation has a negative dependence on the Fermi velocity,which in turn could be used to quantify the correlation strength.展开更多
基金support from the National Natural Science Foundation of China(Grant No.11974027)the National Key R&D Program of China(Grant Nos.2019YFA0307800 and 2021YFA1400100)+2 种基金Beijing Natural Science Foundation(Grant No.Z190011)Beijing Natural Science Foundation(Grant No.4222084)support from the National Natural Science Foundation of China(Grant No.62275265)。
文摘Flat-band physics of moirésuperlattices,originally discovered in the celebrated twisted bilayer graphene,have recently been intensively explored in multilayer graphene systems that can be further controlled by electric field.In this work,we experimentally find the evidence of correlated insulators at half filling of the electron moiréband of twisted monolayer–trilayer graphene with a twist angle around 1.2°.Van Hove singularity(VHS),manifested as enhanced resistance and zero Hall voltage,is observed to be distinct in conduction and valence flat bands.It also depends on the direction and magnitude of the displacement fields,consistent with the asymmetric crystal structure.While the resistance ridges at VHS can be enhanced by magnetic fields,when they cross commensurate fillings of the moirésuperlattice in the conduction band,the enhancement is so strong that signatures of correlated insulator appear,which may further develop into an energy gap depending on the correlation strength.At last,Fermi velocity derived from temperature coefficients of resistivity is compared between conduction and valence bands with different displacement fields.It is found that electronic correlation has a negative dependence on the Fermi velocity,which in turn could be used to quantify the correlation strength.
