目的:对比分析双眼三焦点IOL(AT LISA tri 839MP IOL)植入与一眼植入AT LISA tri 839MP IOL而另一眼植入非球面单焦点IOL患者术后视觉相关生活质量。方法:前瞻性临床研究。收集2018-05/2019-08在我院行白内障超声乳化联合三焦点AT LISA ...目的:对比分析双眼三焦点IOL(AT LISA tri 839MP IOL)植入与一眼植入AT LISA tri 839MP IOL而另一眼植入非球面单焦点IOL患者术后视觉相关生活质量。方法:前瞻性临床研究。收集2018-05/2019-08在我院行白内障超声乳化联合三焦点AT LISA tri 839MP IOL植入的患者45例,按是否双眼植入AT LISA tri 839MP IOL分为两组,双眼植入者24例纳入双眼三焦点组;一眼植入AT LISA tri 839MP IOL而另一眼植入非球面单焦点IOL者21例纳入单眼三焦点组。术后3mo,检测两组患者裸眼视力及等效球镜度,并通过中国版视功能指数量表(VF-14-CN)评价视觉相关生活质量,评估日常生活脱镜率及满意度。结果:术后3mo,双眼三焦点组和单眼三焦点组患者双眼裸眼远、中、近视力均无明显差异(P>0.05),两组患者VF-14-CN问卷得分(96.2±0.50、92.43±1.32分)、日常生活脱镜率(96%、90%)及患者主观满意度(96%、95%)均无差异(P>0.05)。结论:双眼植入AT LISA tri 839MP IOL和一眼植入AT LISA tri 839MP IOL而另一眼植入非球面单焦点IOL的患者术后均具有良好的双眼裸眼远、中、近视力,术后视觉相关生活质量、脱镜率、满意度无明显差异。对一眼不适合植入三焦点IOL或既往一眼已植入非球面单焦点IOL的患者,可考虑另一眼行三焦点IOL植入以满足患者双眼全程视力的要求。展开更多
By introducing a thin p-type layer between the Schottky metal and n-GaN layer, this work presents a Schottky-pn junction diode(SPND) configuration for the GaN rectifier fabrication. Specific unipolar carrier conductio...By introducing a thin p-type layer between the Schottky metal and n-GaN layer, this work presents a Schottky-pn junction diode(SPND) configuration for the GaN rectifier fabrication. Specific unipolar carrier conduction characteristic is demonstrated by the verification of temperature-dependent current–voltage(I–V) tests and electroluminescence spectra.Meanwhile, apparently advantageous forward conduction properties as compared to the pn diode fabricated on the same wafer have been achieved, featuring a lower turn-on voltage of 0.82 V. Together with the analysis model established in the GaN SPND for a wide-range designable turn-on voltage, this work provides an alternative method to the GaN rectifier strategies besides the traditional solution.展开更多
文摘目的:对比分析双眼三焦点IOL(AT LISA tri 839MP IOL)植入与一眼植入AT LISA tri 839MP IOL而另一眼植入非球面单焦点IOL患者术后视觉相关生活质量。方法:前瞻性临床研究。收集2018-05/2019-08在我院行白内障超声乳化联合三焦点AT LISA tri 839MP IOL植入的患者45例,按是否双眼植入AT LISA tri 839MP IOL分为两组,双眼植入者24例纳入双眼三焦点组;一眼植入AT LISA tri 839MP IOL而另一眼植入非球面单焦点IOL者21例纳入单眼三焦点组。术后3mo,检测两组患者裸眼视力及等效球镜度,并通过中国版视功能指数量表(VF-14-CN)评价视觉相关生活质量,评估日常生活脱镜率及满意度。结果:术后3mo,双眼三焦点组和单眼三焦点组患者双眼裸眼远、中、近视力均无明显差异(P>0.05),两组患者VF-14-CN问卷得分(96.2±0.50、92.43±1.32分)、日常生活脱镜率(96%、90%)及患者主观满意度(96%、95%)均无差异(P>0.05)。结论:双眼植入AT LISA tri 839MP IOL和一眼植入AT LISA tri 839MP IOL而另一眼植入非球面单焦点IOL的患者术后均具有良好的双眼裸眼远、中、近视力,术后视觉相关生活质量、脱镜率、满意度无明显差异。对一眼不适合植入三焦点IOL或既往一眼已植入非球面单焦点IOL的患者,可考虑另一眼行三焦点IOL植入以满足患者双眼全程视力的要求。
基金supported by the National Natural Science Foundation of China (Grant Nos. U2141241, 62004099, 61921005,and 91850112)。
文摘By introducing a thin p-type layer between the Schottky metal and n-GaN layer, this work presents a Schottky-pn junction diode(SPND) configuration for the GaN rectifier fabrication. Specific unipolar carrier conduction characteristic is demonstrated by the verification of temperature-dependent current–voltage(I–V) tests and electroluminescence spectra.Meanwhile, apparently advantageous forward conduction properties as compared to the pn diode fabricated on the same wafer have been achieved, featuring a lower turn-on voltage of 0.82 V. Together with the analysis model established in the GaN SPND for a wide-range designable turn-on voltage, this work provides an alternative method to the GaN rectifier strategies besides the traditional solution.
