The performance of spin–orbit torque(SOT)in heavy metal/ferromagnetic metal periodic multilayers has attracted widespread attention.In this paper,we have successfully fabricated a series of perpendicular magnetized[P...The performance of spin–orbit torque(SOT)in heavy metal/ferromagnetic metal periodic multilayers has attracted widespread attention.In this paper,we have successfully fabricated a series of perpendicular magnetized[Pt(2-t)/Ni(t)]_4 multilayers,and studied the SOT in the multilayers by varying the thickness of Ni layer t.The current induced magnetization switching was achieved with a critical current density of 1×10^(7)A/cm^(2).The damping-like SOT efficiencyξ_(DL)was extracted from an extended harmonic Hall measurement.We demonstrated that theξ_(DL)can be effectively modulated by t_(Pt)/t_(Ni)ratio of Pt and Ni in the multilayers.The SOT investigation about the[Pt/Ni]N multilayers might provide new material candidates for practical perpendicular SOT-MRAM devices.展开更多
基金Project supported by the National Key R&D Program of China(Grant No.2021YFB3502400)the National Natural Science Foundation of China(Grant Nos.52061135105,12074025,11834013,and 12274203)+1 种基金the CAS Project for Yong Scientists in Basic Research(Grant No.YSBR-030)the Key Research Project of Frontier Science of Chinese Academy of Sciences(Grant Nos.XDB44000000 and XDB28000000)。
文摘The performance of spin–orbit torque(SOT)in heavy metal/ferromagnetic metal periodic multilayers has attracted widespread attention.In this paper,we have successfully fabricated a series of perpendicular magnetized[Pt(2-t)/Ni(t)]_4 multilayers,and studied the SOT in the multilayers by varying the thickness of Ni layer t.The current induced magnetization switching was achieved with a critical current density of 1×10^(7)A/cm^(2).The damping-like SOT efficiencyξ_(DL)was extracted from an extended harmonic Hall measurement.We demonstrated that theξ_(DL)can be effectively modulated by t_(Pt)/t_(Ni)ratio of Pt and Ni in the multilayers.The SOT investigation about the[Pt/Ni]N multilayers might provide new material candidates for practical perpendicular SOT-MRAM devices.
