软体机器人是近年来的研究热点,涉及信号检测、控制、致动等多个方面。基于弹性体材料设计制备了一种符合人体手指运动规律的弯曲致动器及其仿生手和电容式可拉伸传感器。仿生手总共设计有14个弯曲关节,且每个弯曲关节都由外部管道独立...软体机器人是近年来的研究热点,涉及信号检测、控制、致动等多个方面。基于弹性体材料设计制备了一种符合人体手指运动规律的弯曲致动器及其仿生手和电容式可拉伸传感器。仿生手总共设计有14个弯曲关节,且每个弯曲关节都由外部管道独立控制,当外部气压达到50 k Pa时,手指关节能够实现90o的弯曲变形,最大指尖压力为210m N。可拉伸应变传感器在200%应变下表现出良好的稳定性和可逆性,将传感器贴在手指关节上具有监测手指运动的功能。最后,将传感器贴于手套上作为可穿戴器件,通过单片机控制系统采集手套上传感器由于手指弯曲产生的信号,信号经蓝牙传输,实现对气动回路的有效控制,最终完成对仿生手的远程实时操控。研究结果可应用于远程交互、生命科学等领域。展开更多
With the development of integrate circuit and artificial intelligence,many kinds of transistors have been invented.In recent years,wide attention has been paid to the oxide thin film transistors due to its ease prepar...With the development of integrate circuit and artificial intelligence,many kinds of transistors have been invented.In recent years,wide attention has been paid to the oxide thin film transistors due to its ease preparation,low cost,and suitability for mass production.Traditionally used gate dielectric film(such as silicon dioxide film)in oxide thin film transistor owns low dielectric constant,which leads to weak capacitive coupling between the gate dielectric layer and the channel layer.As a result,high voltage(10 V or more)needs to be applied on the gate electrode in order to achieve the purpose of regulating the current of channel layer.Therefore,new oxide thin film needs to be developed.In this work,silane coupling agents(3-triethoxysilypropyla-mine)KH550 solid electrolyte film was obtained by spin coating-process.The KH550 solid electrolyte was used as gate dielectric layer to fabricate low-voltage indium zinc oxide thin film transistor.The surface topography and thickness of KH550 solid electrolyte film were characterized by atomic force microscope and field emission scanning electron microscope,respectively.The capacitance-frequency curve of the sample was measured by impedance analyzer(Soloartron 1260A),and the electrical characteristics of the sample were analyzed by a semiconductor parameter analyzer(Keithley 4200 SCS).A maximum specific capacitance of about 7.3μF/cm^(2) is obtained at 1 Hz.The transistor shows a good stability of pulse operation and negative bias voltage,the operation voltage is only 2 V,the current on/off ratio is about 1.24×10^(6),and the subthreshold swing is 169.2 mV/dec.The development of KH550 solid electrolyte gate dielectric provides a novel way for the research of oxide thin film transistor.展开更多
文摘软体机器人是近年来的研究热点,涉及信号检测、控制、致动等多个方面。基于弹性体材料设计制备了一种符合人体手指运动规律的弯曲致动器及其仿生手和电容式可拉伸传感器。仿生手总共设计有14个弯曲关节,且每个弯曲关节都由外部管道独立控制,当外部气压达到50 k Pa时,手指关节能够实现90o的弯曲变形,最大指尖压力为210m N。可拉伸应变传感器在200%应变下表现出良好的稳定性和可逆性,将传感器贴在手指关节上具有监测手指运动的功能。最后,将传感器贴于手套上作为可穿戴器件,通过单片机控制系统采集手套上传感器由于手指弯曲产生的信号,信号经蓝牙传输,实现对气动回路的有效控制,最终完成对仿生手的远程实时操控。研究结果可应用于远程交互、生命科学等领域。
文摘With the development of integrate circuit and artificial intelligence,many kinds of transistors have been invented.In recent years,wide attention has been paid to the oxide thin film transistors due to its ease preparation,low cost,and suitability for mass production.Traditionally used gate dielectric film(such as silicon dioxide film)in oxide thin film transistor owns low dielectric constant,which leads to weak capacitive coupling between the gate dielectric layer and the channel layer.As a result,high voltage(10 V or more)needs to be applied on the gate electrode in order to achieve the purpose of regulating the current of channel layer.Therefore,new oxide thin film needs to be developed.In this work,silane coupling agents(3-triethoxysilypropyla-mine)KH550 solid electrolyte film was obtained by spin coating-process.The KH550 solid electrolyte was used as gate dielectric layer to fabricate low-voltage indium zinc oxide thin film transistor.The surface topography and thickness of KH550 solid electrolyte film were characterized by atomic force microscope and field emission scanning electron microscope,respectively.The capacitance-frequency curve of the sample was measured by impedance analyzer(Soloartron 1260A),and the electrical characteristics of the sample were analyzed by a semiconductor parameter analyzer(Keithley 4200 SCS).A maximum specific capacitance of about 7.3μF/cm^(2) is obtained at 1 Hz.The transistor shows a good stability of pulse operation and negative bias voltage,the operation voltage is only 2 V,the current on/off ratio is about 1.24×10^(6),and the subthreshold swing is 169.2 mV/dec.The development of KH550 solid electrolyte gate dielectric provides a novel way for the research of oxide thin film transistor.
