A special device with photocurrent amplification function is reported. The device with long base region structure consists of dual route photodetectors and their amplifier. Two photodetectors with a space of 50 μm ...A special device with photocurrent amplification function is reported. The device with long base region structure consists of dual route photodetectors and their amplifier. Two photodetectors with a space of 50 μm are precisely located in this device. The device with current sensitivity of S ≥15 A/lm,static state current transmission coefficient of h FE ≥5 000, single route dark current of I D≥1 μA, high frequency current transmission coefficient modulus of | h fe |≥1 at 400 MHz is obtained. At present, the device has been tried out in展开更多
文摘A special device with photocurrent amplification function is reported. The device with long base region structure consists of dual route photodetectors and their amplifier. Two photodetectors with a space of 50 μm are precisely located in this device. The device with current sensitivity of S ≥15 A/lm,static state current transmission coefficient of h FE ≥5 000, single route dark current of I D≥1 μA, high frequency current transmission coefficient modulus of | h fe |≥1 at 400 MHz is obtained. At present, the device has been tried out in
