This paper reports a low-damage interface treatment process for Al N/Ga N high electron mobility transistor(HEMT)and demonstrates the excellent power characteristics of radio-frequency(RF) enhancementmode(E-mode) Al N...This paper reports a low-damage interface treatment process for Al N/Ga N high electron mobility transistor(HEMT)and demonstrates the excellent power characteristics of radio-frequency(RF) enhancementmode(E-mode) Al N/Ga N HEMT. An RF E-mode device with 2.9-nm-thick Al N barrier layer fabricated by remote plasma oxidation(RPO) treatment at 300℃. The device with a gate length of 0.12-μm has a threshold voltage(Vth) of 0.5 V, a maximum saturation current of 1.16 A/mm, a high Ion/Ioff ratio of 1×108, and a 440-m S/mm peak transconductance. During continuous wave(CW) power testing, the device demonstrates that at 3.6 GHz, a power added efficiency is 61.9% and a power density is 1.38 W/mm, and at 30 GHz, a power added efficiency is 41.6% and a power density is 0.85 W/mm. Furthermore, the RPO treatment improves the mobility of RF E-mode Al N/Ga N HEMT. All results show that the RPO processing method has good applicability to scaling ultrathin barrier E-mode Al N/Ga N HEMT for 5G compliable frequency ranging from sub-6 GHz to Ka-band.展开更多
基金Project supported by the Fundamental Research Funds for the National Key Research and Development Program, China (Grant No. 2020YFB1807403)the National Natural Science Foundation of China (Grant Nos. 62174125, 62188102, and 62131014)。
文摘This paper reports a low-damage interface treatment process for Al N/Ga N high electron mobility transistor(HEMT)and demonstrates the excellent power characteristics of radio-frequency(RF) enhancementmode(E-mode) Al N/Ga N HEMT. An RF E-mode device with 2.9-nm-thick Al N barrier layer fabricated by remote plasma oxidation(RPO) treatment at 300℃. The device with a gate length of 0.12-μm has a threshold voltage(Vth) of 0.5 V, a maximum saturation current of 1.16 A/mm, a high Ion/Ioff ratio of 1×108, and a 440-m S/mm peak transconductance. During continuous wave(CW) power testing, the device demonstrates that at 3.6 GHz, a power added efficiency is 61.9% and a power density is 1.38 W/mm, and at 30 GHz, a power added efficiency is 41.6% and a power density is 0.85 W/mm. Furthermore, the RPO treatment improves the mobility of RF E-mode Al N/Ga N HEMT. All results show that the RPO processing method has good applicability to scaling ultrathin barrier E-mode Al N/Ga N HEMT for 5G compliable frequency ranging from sub-6 GHz to Ka-band.
