The In segregation and its suppression in InGaAs/AlGaAs quantum well are investigated by using high-resolution x-ray diffraction(XRD)and photoluminescence(PL),combined with the state-of-the-art aberration corrected sc...The In segregation and its suppression in InGaAs/AlGaAs quantum well are investigated by using high-resolution x-ray diffraction(XRD)and photoluminescence(PL),combined with the state-of-the-art aberration corrected scanning transmission electron microscopy(Cs-STEM)techniques.To facility our study,we grow two multiple quantum wells(MQWs)samples,which are almost identical except that in sample B a thin GaAs layer is inserted in each of the InGaAs well and AlGaAs barrier layer comparing to pristine InGaAs/AlGaAs MQWs(sample A).Our study indeed shows the direct evidences that In segregation occurs in the InGaAs/AlGaAs interface,and the effect of the Ga As insertion layer on suppressing the segregation of In atoms is also demonstrated on the atomic-scale.Therefore,the atomic-scale insights are provided to understand the segregation behavior of In atoms and to unravel the underlying mechanism of the effect of GaAs insertion layer on the improvement of crystallinity,interface roughness,and further an enhanced optical performance of InGaAs/AlGaAs QWs.展开更多
设计了一种用于兰州重离子治癌系统中剂量监测的新型电荷-频率转换电路。该电路将输入的电流信号直接转换为脉冲输出,通过计数器对脉冲个数进行计数实现对输入电荷的测量,从而实现对照射剂量的实时监测。实验表明:该电路可实现0.01 n A^...设计了一种用于兰州重离子治癌系统中剂量监测的新型电荷-频率转换电路。该电路将输入的电流信号直接转换为脉冲输出,通过计数器对脉冲个数进行计数实现对输入电荷的测量,从而实现对照射剂量的实时监测。实验表明:该电路可实现0.01 n A^1μA范围内双极性电流的测量,在整个测量范围内线性度好于2.71%。展开更多
基金X.H.gratefully acknowledges the financial support from the National Natural Science Foundation of China(Grant No.21902096)the Scientific Research Foundation of Shaanxi University of Science and Technology(Grant No.126061803)+1 种基金S.M.and B.X.thank the National Natural Science Foundation of China(Grant No.21972103)the Shanxi Provincial Key Innovative Research Team in Science and Technology(Grant No.201703D111026).
文摘The In segregation and its suppression in InGaAs/AlGaAs quantum well are investigated by using high-resolution x-ray diffraction(XRD)and photoluminescence(PL),combined with the state-of-the-art aberration corrected scanning transmission electron microscopy(Cs-STEM)techniques.To facility our study,we grow two multiple quantum wells(MQWs)samples,which are almost identical except that in sample B a thin GaAs layer is inserted in each of the InGaAs well and AlGaAs barrier layer comparing to pristine InGaAs/AlGaAs MQWs(sample A).Our study indeed shows the direct evidences that In segregation occurs in the InGaAs/AlGaAs interface,and the effect of the Ga As insertion layer on suppressing the segregation of In atoms is also demonstrated on the atomic-scale.Therefore,the atomic-scale insights are provided to understand the segregation behavior of In atoms and to unravel the underlying mechanism of the effect of GaAs insertion layer on the improvement of crystallinity,interface roughness,and further an enhanced optical performance of InGaAs/AlGaAs QWs.
基金Supported by National Natural Science Foundation of China(1160101211661002)+6 种基金Ningxia Natural Science Foundation(NZ13095NZ16093)Scientiflc Research Foundation of the Higher Education Institutions of Ningxia(NGY2016134)Beifang University of Nationalities Foundation(2016SXKY062014XBZ092014XBZ012013XYZ028)
文摘设计了一种用于兰州重离子治癌系统中剂量监测的新型电荷-频率转换电路。该电路将输入的电流信号直接转换为脉冲输出,通过计数器对脉冲个数进行计数实现对输入电荷的测量,从而实现对照射剂量的实时监测。实验表明:该电路可实现0.01 n A^1μA范围内双极性电流的测量,在整个测量范围内线性度好于2.71%。
