Photodetectors based on two-dimensional materials have attracted much attention because of their unique structure and outstanding performance.The response speed of single ReS_(2)photodetector is slow exceptionally,the...Photodetectors based on two-dimensional materials have attracted much attention because of their unique structure and outstanding performance.The response speed of single ReS_(2)photodetector is slow exceptionally,the heterostructure could improves the response speed of ReS_(2)-based photodetector,but the photodetectors responsivity is reduced greatly,which restricts the development of ReS_(2).In this paper,a vertically structured ReS_(2)/SnS_(2)van der Waals heterostructure photodetectors is prepared,using ReS_(2)as the transport layer and SnS_(2)as the light absorbing layer to regulate the channel current.The device has an ultra-high photoconductive gain of 10^(10),which exhibits an ultra-high responsivity of4706 A/W under 365-nm illumination and response speed in seconds,and has an ultra-high external quantum efficiency of1.602×10^(6)%and a high detectivity of 5.29×10^(12)jones.The study for ReS_(2)-based photodetector displays great potential for developing future optoelectronic devices.展开更多
基金the National Natural Science Foundation of China(Grant Nos.61574011,60908012,61575008,61775007,61731019,61874145,62074011,and 62134008)the Beijing Natural Science Foundation(Grant Nos.4182015,4172011,and 4202010)Beijing Nova Program(Grant No.Z201100006820096)。
文摘Photodetectors based on two-dimensional materials have attracted much attention because of their unique structure and outstanding performance.The response speed of single ReS_(2)photodetector is slow exceptionally,the heterostructure could improves the response speed of ReS_(2)-based photodetector,but the photodetectors responsivity is reduced greatly,which restricts the development of ReS_(2).In this paper,a vertically structured ReS_(2)/SnS_(2)van der Waals heterostructure photodetectors is prepared,using ReS_(2)as the transport layer and SnS_(2)as the light absorbing layer to regulate the channel current.The device has an ultra-high photoconductive gain of 10^(10),which exhibits an ultra-high responsivity of4706 A/W under 365-nm illumination and response speed in seconds,and has an ultra-high external quantum efficiency of1.602×10^(6)%and a high detectivity of 5.29×10^(12)jones.The study for ReS_(2)-based photodetector displays great potential for developing future optoelectronic devices.
