By the method of descending crucible with rotation, crack-free CdGeAs2single crystals of U15 mm 950 mm were grown in a furnace with three independen heating zones after optimizing the temperature field, and the descen...By the method of descending crucible with rotation, crack-free CdGeAs2single crystals of U15 mm 950 mm were grown in a furnace with three independen heating zones after optimizing the temperature field, and the descending and rotational speed to meet the need of CdGeAs2crystal growth. The properties of as-grown crysta were characterized by a variety of techniques. The results of X-ray diffraction（XRD） show that there are two cleavage faces, which are（110） and（101）. The peaks are in high intensity and good symmetry, which demonstrates that the crystal is integral in structure and well crystallized. The energy-dispersive spectrometry results indicate that the wafer of the CdGeAs2crystal is closer to the stoichiometry The IR transmittance of the wafer is ＊48.6 % at 5.5 lm, and the maximum value is up to 51.6 % in the range of2.3–18.0 lm. Etch pits of（001） face are observed and the density of the etch pits is evaluated to be 1 9 105cm-2.展开更多
The performances of second harmonic gen eration (SHG) and optical parametric oscillator (OPO) in CdGeAs2 crystal are strongly influenced by surface quality. In this paper, the surfaces of samples were treated by mecha...The performances of second harmonic gen eration (SHG) and optical parametric oscillator (OPO) in CdGeAs2 crystal are strongly influenced by surface quality. In this paper, the surfaces of samples were treated by mechanical polishing (MP), chemical polishing (CP), chemical-mechanical polishing (CMP) and CP following CMP closely (CMP + CP). Then, the surface state was characterized by optical microscopy (OM), scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). AFM measurements show that an ultra-smooth surface is achieved after CMP + CP treatment and the roughness value is 0.98 nm. Meanwhile, the roughness of the surfaces treated by MP, CP and CMP are 4.53, 2.83 and 1.38 nm, respectively. By XRD rocking curves, the diffraction peak which belongs to the wafer treated by CMP + CP is the highest in intensity and best symmetrical in shape. XPS analysis indicates that Ge4+ proportions of GeO2 in total Ge content of CdGeAs2 wafers' surface after MP, CP, CMP and CMP + CP treatment are 27.6%, 42.8%, 6.1% and 30.3%, respectively.展开更多
A high-quality ZnGeP_(2)(ZGP)single crystal with large size ofΦ30 mm×80 mm was grown by a modified vertical Bridgman method.ZGP wafers were annealed with ZGP polycrystalline powder for 300 h at 550,600 and 650℃...A high-quality ZnGeP_(2)(ZGP)single crystal with large size ofΦ30 mm×80 mm was grown by a modified vertical Bridgman method.ZGP wafers were annealed with ZGP polycrystalline powder for 300 h at 550,600 and 650℃,respectively.The as-grown and annealed crystals were characterized by X-ray diffraction(XRD)analysis,Fourier transform infrared spectroscopy(FTIR),IR microscope and energy-dispersive spectroscopy(EDS).Results show that the quality of all wafers is improved evidently after annealing and the optimum annealing temperature obtained is 600℃.The IR transmittance of the wafer measured by FTIR is up to 56.78%at wavelength of 2.0μm nearby and exceeds 59.00%in the wavelength range of 3.0-8.0μm.The deviations from stoichiometry decrease,and the homogeneity of the crystal is also improved after annealing.In this paper,scanning infrared map was proposed as a new nondestructive method to evaluate optical quality and homogeneity of crystal through comparing the IR transmittance with the three-dimensional IR spectral contour map.展开更多
In this paper we proposed a strategic step to build the Internet of Knowledge(IoK) and explained what is,why important and how to make a proper design.It is a value proposition of the IoK which has valuable role as vi...In this paper we proposed a strategic step to build the Internet of Knowledge(IoK) and explained what is,why important and how to make a proper design.It is a value proposition of the IoK which has valuable role as vital as IoT in building a smart city.展开更多
目的观察当归对慢性脑低灌注大鼠阿尔茨海默病样变及认知功能的影响。方法选择SD大鼠44只,随机分为假手术组、双侧颈总动脉结扎模型(2VO)组、低剂量当归组及高剂量当归组,每组11只。通过Morris水迷宫和物体再认实验评价大鼠海马依赖的...目的观察当归对慢性脑低灌注大鼠阿尔茨海默病样变及认知功能的影响。方法选择SD大鼠44只,随机分为假手术组、双侧颈总动脉结扎模型(2VO)组、低剂量当归组及高剂量当归组,每组11只。通过Morris水迷宫和物体再认实验评价大鼠海马依赖的空间学习和记忆能力,并采用酶联免疫吸附法检测大鼠海马区β淀粉样蛋白(β-amyloid,Aβ)沉积,Western blot免疫印迹法检测海马区脑源性神经生长因子(BDNF)、β分泌酶1、Aβ、Tau蛋白和蛋白激酶B(Akt)/糖原合酶激酶3β(GSK3β)信号通路磷酸化水平。结果与假手术组比较,2VO组大鼠第3、4、5天逃逸潜伏期明显延长,目标象限探索时间明显缩短,优先指数显著降低,Aβ1-40、Aβ1-42、磷酸化Tau、β分泌酶1表达明显增高,Akt/GSK3β通路磷酸化水平、BDNF明显降低(P<0.05,P<0.01)。与2VO组比较,低剂量当归组和高剂量当归组第3、4、5天逃逸潜伏期明显缩短,目标象限探索时间明显延长,优先指数显著升高,Aβ1-40、Aβ1-42、磷酸化Tau、β分泌酶1表达明显降低,Akt/GSK3β通路磷酸化水平明显升高(P<0.05,P<0.01)。与低剂量当归组比较,高剂量当归组逃逸潜伏期明显缩短,目标象限探索时间明显延长。与2VO组比较,高剂量当归组海马BDNF表达明显增高(0.360±0.027 vs 0.056±0.019,P<0.01)。结论当归可能通过抑制Akt/GSK3β通路和β分泌酶1活性而抑制慢性脑低灌注大鼠海马内磷酸化Tau蛋白和Aβ沉积等阿尔茨海默病样病理变化,从而改善认知功能。展开更多
基金financially supported by the National Natural Science Foundation Key Programs of China (No. 50732005)the National High Technology Research and Development Program of China (No. 2007AA03Z443)
文摘By the method of descending crucible with rotation, crack-free CdGeAs2single crystals of U15 mm 950 mm were grown in a furnace with three independen heating zones after optimizing the temperature field, and the descending and rotational speed to meet the need of CdGeAs2crystal growth. The properties of as-grown crysta were characterized by a variety of techniques. The results of X-ray diffraction（XRD） show that there are two cleavage faces, which are（110） and（101）. The peaks are in high intensity and good symmetry, which demonstrates that the crystal is integral in structure and well crystallized. The energy-dispersive spectrometry results indicate that the wafer of the CdGeAs2crystal is closer to the stoichiometry The IR transmittance of the wafer is ＊48.6 % at 5.5 lm, and the maximum value is up to 51.6 % in the range of2.3–18.0 lm. Etch pits of（001） face are observed and the density of the etch pits is evaluated to be 1 9 105cm-2.
基金financially supported by the National Natural Science Foundation of China (No. 50732005)the National High Technology Research and Development Program of China (No. 007AA03Z443)
文摘The performances of second harmonic gen eration (SHG) and optical parametric oscillator (OPO) in CdGeAs2 crystal are strongly influenced by surface quality. In this paper, the surfaces of samples were treated by mechanical polishing (MP), chemical polishing (CP), chemical-mechanical polishing (CMP) and CP following CMP closely (CMP + CP). Then, the surface state was characterized by optical microscopy (OM), scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). AFM measurements show that an ultra-smooth surface is achieved after CMP + CP treatment and the roughness value is 0.98 nm. Meanwhile, the roughness of the surfaces treated by MP, CP and CMP are 4.53, 2.83 and 1.38 nm, respectively. By XRD rocking curves, the diffraction peak which belongs to the wafer treated by CMP + CP is the highest in intensity and best symmetrical in shape. XPS analysis indicates that Ge4+ proportions of GeO2 in total Ge content of CdGeAs2 wafers' surface after MP, CP, CMP and CMP + CP treatment are 27.6%, 42.8%, 6.1% and 30.3%, respectively.
基金financially supported by the National Natural Science Foundation Key Programs of China(No.50732005)the National High Technology Research and Development Program of China(No.2007AA03Z443)。
文摘A high-quality ZnGeP_(2)(ZGP)single crystal with large size ofΦ30 mm×80 mm was grown by a modified vertical Bridgman method.ZGP wafers were annealed with ZGP polycrystalline powder for 300 h at 550,600 and 650℃,respectively.The as-grown and annealed crystals were characterized by X-ray diffraction(XRD)analysis,Fourier transform infrared spectroscopy(FTIR),IR microscope and energy-dispersive spectroscopy(EDS).Results show that the quality of all wafers is improved evidently after annealing and the optimum annealing temperature obtained is 600℃.The IR transmittance of the wafer measured by FTIR is up to 56.78%at wavelength of 2.0μm nearby and exceeds 59.00%in the wavelength range of 3.0-8.0μm.The deviations from stoichiometry decrease,and the homogeneity of the crystal is also improved after annealing.In this paper,scanning infrared map was proposed as a new nondestructive method to evaluate optical quality and homogeneity of crystal through comparing the IR transmittance with the three-dimensional IR spectral contour map.
文摘In this paper we proposed a strategic step to build the Internet of Knowledge(IoK) and explained what is,why important and how to make a proper design.It is a value proposition of the IoK which has valuable role as vital as IoT in building a smart city.
文摘目的观察当归对慢性脑低灌注大鼠阿尔茨海默病样变及认知功能的影响。方法选择SD大鼠44只,随机分为假手术组、双侧颈总动脉结扎模型(2VO)组、低剂量当归组及高剂量当归组,每组11只。通过Morris水迷宫和物体再认实验评价大鼠海马依赖的空间学习和记忆能力,并采用酶联免疫吸附法检测大鼠海马区β淀粉样蛋白(β-amyloid,Aβ)沉积,Western blot免疫印迹法检测海马区脑源性神经生长因子(BDNF)、β分泌酶1、Aβ、Tau蛋白和蛋白激酶B(Akt)/糖原合酶激酶3β(GSK3β)信号通路磷酸化水平。结果与假手术组比较,2VO组大鼠第3、4、5天逃逸潜伏期明显延长,目标象限探索时间明显缩短,优先指数显著降低,Aβ1-40、Aβ1-42、磷酸化Tau、β分泌酶1表达明显增高,Akt/GSK3β通路磷酸化水平、BDNF明显降低(P<0.05,P<0.01)。与2VO组比较,低剂量当归组和高剂量当归组第3、4、5天逃逸潜伏期明显缩短,目标象限探索时间明显延长,优先指数显著升高,Aβ1-40、Aβ1-42、磷酸化Tau、β分泌酶1表达明显降低,Akt/GSK3β通路磷酸化水平明显升高(P<0.05,P<0.01)。与低剂量当归组比较,高剂量当归组逃逸潜伏期明显缩短,目标象限探索时间明显延长。与2VO组比较,高剂量当归组海马BDNF表达明显增高(0.360±0.027 vs 0.056±0.019,P<0.01)。结论当归可能通过抑制Akt/GSK3β通路和β分泌酶1活性而抑制慢性脑低灌注大鼠海马内磷酸化Tau蛋白和Aβ沉积等阿尔茨海默病样病理变化,从而改善认知功能。
