We investigate the global existence of strong solutions to a non-isothermal ideal gas model derived from an energy variational approach.We first show the global wellposedness in the Sobolev space H^(2)(R^(3)) for solu...We investigate the global existence of strong solutions to a non-isothermal ideal gas model derived from an energy variational approach.We first show the global wellposedness in the Sobolev space H^(2)(R^(3)) for solutions near equilibrium through iterated energy-type bounds and a continuity argument.We then prove the global well-posedness in the critical Besov space B^(3/2)_(2,1) by showing that the linearized operator is a contraction mapping under the right circumstances.展开更多
The In segregation and its suppression in InGaAs/AlGaAs quantum well are investigated by using high-resolution x-ray diffraction(XRD)and photoluminescence(PL),combined with the state-of-the-art aberration corrected sc...The In segregation and its suppression in InGaAs/AlGaAs quantum well are investigated by using high-resolution x-ray diffraction(XRD)and photoluminescence(PL),combined with the state-of-the-art aberration corrected scanning transmission electron microscopy(Cs-STEM)techniques.To facility our study,we grow two multiple quantum wells(MQWs)samples,which are almost identical except that in sample B a thin GaAs layer is inserted in each of the InGaAs well and AlGaAs barrier layer comparing to pristine InGaAs/AlGaAs MQWs(sample A).Our study indeed shows the direct evidences that In segregation occurs in the InGaAs/AlGaAs interface,and the effect of the Ga As insertion layer on suppressing the segregation of In atoms is also demonstrated on the atomic-scale.Therefore,the atomic-scale insights are provided to understand the segregation behavior of In atoms and to unravel the underlying mechanism of the effect of GaAs insertion layer on the improvement of crystallinity,interface roughness,and further an enhanced optical performance of InGaAs/AlGaAs QWs.展开更多
1碳达峰与碳中和研究的紧迫性1975年,Broecker[1]在Science上发表一篇文章“Climat change:Are we on the brink of a pronounced global warming?”使得大气中CO_(2)增加导致气候变暖的概念第一次走进人们的视野.大气CO_(2)增加主要是...1碳达峰与碳中和研究的紧迫性1975年,Broecker[1]在Science上发表一篇文章“Climat change:Are we on the brink of a pronounced global warming?”使得大气中CO_(2)增加导致气候变暖的概念第一次走进人们的视野.大气CO_(2)增加主要是由于人类对化石能源的利用及人类活动导致的土地利用改变[2].目前,大气CO_(2)浓度约为415 ppm(1 ppm=1μmol/mol,Global Carbon Budget 2020,https://www.globalcarbonproject.org/carbonbudget/index.htm)。展开更多
基金partially supported by the Zhejiang Province Science Fund(LY21A010009)partially supported by the National Science Foundation of China(12271487,12171097)partially supported by the National Science Foundation(DMS-2012333,DMS-2108209)。
文摘We investigate the global existence of strong solutions to a non-isothermal ideal gas model derived from an energy variational approach.We first show the global wellposedness in the Sobolev space H^(2)(R^(3)) for solutions near equilibrium through iterated energy-type bounds and a continuity argument.We then prove the global well-posedness in the critical Besov space B^(3/2)_(2,1) by showing that the linearized operator is a contraction mapping under the right circumstances.
基金X.H.gratefully acknowledges the financial support from the National Natural Science Foundation of China(Grant No.21902096)the Scientific Research Foundation of Shaanxi University of Science and Technology(Grant No.126061803)+1 种基金S.M.and B.X.thank the National Natural Science Foundation of China(Grant No.21972103)the Shanxi Provincial Key Innovative Research Team in Science and Technology(Grant No.201703D111026).
文摘The In segregation and its suppression in InGaAs/AlGaAs quantum well are investigated by using high-resolution x-ray diffraction(XRD)and photoluminescence(PL),combined with the state-of-the-art aberration corrected scanning transmission electron microscopy(Cs-STEM)techniques.To facility our study,we grow two multiple quantum wells(MQWs)samples,which are almost identical except that in sample B a thin GaAs layer is inserted in each of the InGaAs well and AlGaAs barrier layer comparing to pristine InGaAs/AlGaAs MQWs(sample A).Our study indeed shows the direct evidences that In segregation occurs in the InGaAs/AlGaAs interface,and the effect of the Ga As insertion layer on suppressing the segregation of In atoms is also demonstrated on the atomic-scale.Therefore,the atomic-scale insights are provided to understand the segregation behavior of In atoms and to unravel the underlying mechanism of the effect of GaAs insertion layer on the improvement of crystallinity,interface roughness,and further an enhanced optical performance of InGaAs/AlGaAs QWs.
文摘1碳达峰与碳中和研究的紧迫性1975年,Broecker[1]在Science上发表一篇文章“Climat change:Are we on the brink of a pronounced global warming?”使得大气中CO_(2)增加导致气候变暖的概念第一次走进人们的视野.大气CO_(2)增加主要是由于人类对化石能源的利用及人类活动导致的土地利用改变[2].目前,大气CO_(2)浓度约为415 ppm(1 ppm=1μmol/mol,Global Carbon Budget 2020,https://www.globalcarbonproject.org/carbonbudget/index.htm)。
