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High-stability _(4)H-SiC avalanche photodiodes for UV detection at high temperatures 被引量:1
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作者 周幸叶 吕元杰 +5 位作者 郭红雨 宋旭波 王元刚 梁士雄 卜爱民 冯志红 《Chinese Optics Letters》 SCIE EI CAS CSCD 2023年第3期123-126,共4页
In this work,high-stability _[4]H-SiC avalanche photodiodes[APDs]for ultraviolet[UV]detection at high temperatures are fabricated and investigated.With the temperature increasing from room temperature to 150℃,a very ... In this work,high-stability _[4]H-SiC avalanche photodiodes[APDs]for ultraviolet[UV]detection at high temperatures are fabricated and investigated.With the temperature increasing from room temperature to 150℃,a very small temperature coefficient of 7.4 m V/℃is achieved for the avalanche breakdown voltage of devices.For the first time,the stability of 4H-SiC APDs is verified based on an accelerated aging test with harsh stress conditions.Three different stress conditions are selected with the temperatures and reverse currents of 175℃/100μA,200℃/100μA,and 200℃/500μA,respectively.The results show that our 4H-SiC APD exhibits robust high-temperature performance and can even endure more than120 hours at the harsh aging condition of 200℃/500μA,which indicates that 4H-SiC APDs are very stable and reliable for applications at high temperatures. 展开更多
关键词 silicon carbide photodiod
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