In this work, a 90-nm critical dimension （CD） technological process in an ArF laser lithography system is simulated, and the swing curves of the CD linewidth changing with photoresist thickness are obtained in the a...In this work, a 90-nm critical dimension （CD） technological process in an ArF laser lithography system is simulated, and the swing curves of the CD linewidth changing with photoresist thickness are obtained in the absence and presence of bottom antireflection coating （BARC）. By analysing the simulation result, it can be found that in the absence of BARC the CD swing curve effect is much bigger than that in the presence of BARC. So, the BARC should be needed for the 90-nm CD manufacture. The optimum resist thickness for 90-nm CD in the presence of BARC is obtained, and the optimizing process in this work can be used for reference in practice.展开更多
The Kirk test has good precision for measuring stray light in optical lithography and is the usual method of measuring stray light.However,Kirk did not provide a theoretical explanation to his simulation model.We atte...The Kirk test has good precision for measuring stray light in optical lithography and is the usual method of measuring stray light.However,Kirk did not provide a theoretical explanation to his simulation model.We attempt to give Kirk's model a kind of theoretical explanation and a little improvement based on the model of point spread function of scattering and the theory of statistical optics.It is indicated by simulation that the improved model fits Kirk's measurement data better.展开更多
基金Project supported by the National Special Program of China (Grant No. 2009ZX02204-008)the National Basic Research Program of China (Grant No. 2007AA01Z333)
文摘In this work, a 90-nm critical dimension （CD） technological process in an ArF laser lithography system is simulated, and the swing curves of the CD linewidth changing with photoresist thickness are obtained in the absence and presence of bottom antireflection coating （BARC）. By analysing the simulation result, it can be found that in the absence of BARC the CD swing curve effect is much bigger than that in the presence of BARC. So, the BARC should be needed for the 90-nm CD manufacture. The optimum resist thickness for 90-nm CD in the presence of BARC is obtained, and the optimizing process in this work can be used for reference in practice.
基金by the National Basic Research Program of China under Grant No 2007AA01Z333the National Special Program of China under Grant No 2009ZX02204-008.
文摘The Kirk test has good precision for measuring stray light in optical lithography and is the usual method of measuring stray light.However,Kirk did not provide a theoretical explanation to his simulation model.We attempt to give Kirk's model a kind of theoretical explanation and a little improvement based on the model of point spread function of scattering and the theory of statistical optics.It is indicated by simulation that the improved model fits Kirk's measurement data better.
