An 8-channel hybrid-integrated chip for 200 Gb/s(8×25 Gb/s)signal transmission has been demonstrated.The channels are all within the O-band,and with a spacing of 800 GHz.The core of this chip is a monolithic inte...An 8-channel hybrid-integrated chip for 200 Gb/s(8×25 Gb/s)signal transmission has been demonstrated.The channels are all within the O-band,and with a spacing of 800 GHz.The core of this chip is a monolithic integrated multi-wavelength laser array of 8 directly-modulated distributed feedback(DFB)lasers.By using the reconstruction equivalent chirp technique,multi-wavelength integration and asymmetric phase shift structures are achieved in the laser array.The output laser beams of the array are combined by a planar light-wave circuit,which is hybrid-integrated with the laser array by photonic wire bonding.Experiment results of this transmitter chip show good single-mode working of each unit laser,with a sidemode suppression ratio above 50 dB,and the modulation bandwidth is above 20 GHz.Clear eye diagrams are obtained in the lasers for 25 Gb/s non-return-to-zero modulation,which implies a total 200 Gb/s transmission rate for the whole chip.展开更多
We propose a design of single-mode orbital angular momentum(OAM) beam laser with high direct-modulation bandwidth. It is a microcylinder/microring cavity interacted with two types of second-order gratings: the complex...We propose a design of single-mode orbital angular momentum(OAM) beam laser with high direct-modulation bandwidth. It is a microcylinder/microring cavity interacted with two types of second-order gratings: the complex top grating containing the real part and the imaginary part modulations and the side grating. The side grating etched on the periphery of the microcylinder/microring cavity can select a whispering gallery mode with a specific azimuthal mode number, while the complex top grating can scatter the lasing mode with travelling-wave pattern vertically. With the cooperation of the gratings, the laser works with a single mode and emits radially polarized OAM beams. With an asymmetrical pad metal on the top of the cavity, the OAM on-chip laser can firstly be directly modulated with electrical pumping. Due to the small active volume, the laser with low threshold current is predicted to have a high direct modulation bandwidth about 29 GHz with the bias current of ten times the threshold from the simulation. The semiconductor OAM laser can be rather easily realized at different wavelengths such as the O band, C band, and L band.展开更多
基金supported by the National Key Research and Development Program of China(Nos.2018YFA0704402,2018YFB2201801,2018YFE0201200,and 2020YFB2205800)National Natural Science Foundation of China(Nos.61975075,61975076,and 62004094)+1 种基金Natural Science Foundation of Jiangsu Province(No.BK20200334)Jiangsu Science and Technology Project(No.BE2017003-2)。
文摘An 8-channel hybrid-integrated chip for 200 Gb/s(8×25 Gb/s)signal transmission has been demonstrated.The channels are all within the O-band,and with a spacing of 800 GHz.The core of this chip is a monolithic integrated multi-wavelength laser array of 8 directly-modulated distributed feedback(DFB)lasers.By using the reconstruction equivalent chirp technique,multi-wavelength integration and asymmetric phase shift structures are achieved in the laser array.The output laser beams of the array are combined by a planar light-wave circuit,which is hybrid-integrated with the laser array by photonic wire bonding.Experiment results of this transmitter chip show good single-mode working of each unit laser,with a sidemode suppression ratio above 50 dB,and the modulation bandwidth is above 20 GHz.Clear eye diagrams are obtained in the lasers for 25 Gb/s non-return-to-zero modulation,which implies a total 200 Gb/s transmission rate for the whole chip.
基金supported by the National Key Research and Development Program of China (No.2016YFB0402304)。
文摘We propose a design of single-mode orbital angular momentum(OAM) beam laser with high direct-modulation bandwidth. It is a microcylinder/microring cavity interacted with two types of second-order gratings: the complex top grating containing the real part and the imaginary part modulations and the side grating. The side grating etched on the periphery of the microcylinder/microring cavity can select a whispering gallery mode with a specific azimuthal mode number, while the complex top grating can scatter the lasing mode with travelling-wave pattern vertically. With the cooperation of the gratings, the laser works with a single mode and emits radially polarized OAM beams. With an asymmetrical pad metal on the top of the cavity, the OAM on-chip laser can firstly be directly modulated with electrical pumping. Due to the small active volume, the laser with low threshold current is predicted to have a high direct modulation bandwidth about 29 GHz with the bias current of ten times the threshold from the simulation. The semiconductor OAM laser can be rather easily realized at different wavelengths such as the O band, C band, and L band.
