We report a thin film electroluminescent device with a three-layer structure （diamond/CeF3/SiO2 films）, which has a luminance of 1.5 cd/m^2 at dc voltage 215 V. The electroluminescence spectrum at room temperature s...We report a thin film electroluminescent device with a three-layer structure （diamond/CeF3/SiO2 films）, which has a luminance of 1.5 cd/m^2 at dc voltage 215 V. The electroluminescence spectrum at room temperature shows that the main peaks locate at 527 and 593nm, which are attributed to isolated emission centers of Ce^3＋ ions.展开更多
This paper reports that bunchy flake-like nano-graphite crystallite films （BNGCFs） were deposited on Si substrates by using the microwave chemical vapour deposition technique. Furthermore the BNGCFs were characteriz...This paper reports that bunchy flake-like nano-graphite crystallite films （BNGCFs） were deposited on Si substrates by using the microwave chemical vapour deposition technique. Furthermore the BNGCFs were characterized by x-ray diffraction spectra, scanning electron microscopy, Raman spectra and field emission （FE） I-V measurements, and a lowest turn-on field of 1.5 V/μm, and a high average emission current density of 30 mA/cm2 at a macroscopic electric field of 8.0V/μm were obtained. The J-E data did not follow the original Fowler-Nordheim （F-N） relation since they were not well represented in the F-N plot by a straight line. A model considering the F-N mechanism, and the statistic effects of FE tip structures has been applied successfully to explain all the FE data observed for E 〈 8.SV/μm.展开更多
文摘We report a thin film electroluminescent device with a three-layer structure （diamond/CeF3/SiO2 films）, which has a luminance of 1.5 cd/m^2 at dc voltage 215 V. The electroluminescence spectrum at room temperature shows that the main peaks locate at 527 and 593nm, which are attributed to isolated emission centers of Ce^3＋ ions.
基金supported by the Shanghai Education Committee of China(Grant No 07ZZ95)
文摘This paper reports that bunchy flake-like nano-graphite crystallite films （BNGCFs） were deposited on Si substrates by using the microwave chemical vapour deposition technique. Furthermore the BNGCFs were characterized by x-ray diffraction spectra, scanning electron microscopy, Raman spectra and field emission （FE） I-V measurements, and a lowest turn-on field of 1.5 V/μm, and a high average emission current density of 30 mA/cm2 at a macroscopic electric field of 8.0V/μm were obtained. The J-E data did not follow the original Fowler-Nordheim （F-N） relation since they were not well represented in the F-N plot by a straight line. A model considering the F-N mechanism, and the statistic effects of FE tip structures has been applied successfully to explain all the FE data observed for E 〈 8.SV/μm.
